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Page 7 - CW Semiconductor Lasers

The HL8337MG/38MG is a high-performance GaAlAs laser diode designed to deliver exceptional infrared lasing capabilities. Operating at a typical wavelength of 830nm, this laser diode is engineered to provide a consistent optical output power of 50mW. Its robust construction allows it to function efficiently within a wide temperature ...

Specifications

Center Wavelength: 0.83 um
Output Power: 50 mW
Operation Temperature: -10~+60°C
Operating Voltage: 2.4V Max.
Package: φ5.6mm
Introducing the HL40071MG, a cutting-edge violet laser diode designed to deliver exceptional performance and reliability. This laser diode operates at a wavelength of 405nm, providing a vibrant violet light that is ideal for a variety of precision applications. With an optical output power of 300mW, the HL40071MG ensures powerful ...

Specifications

Center Wavelength: 0.405 um
Output Power: 300 mW
Operation Temperature: -0~+70°C
Package: 5.6mm
Optical Output Power (Max): 360mW
The PLT5 520B is a cutting-edge green laser diode housed in a robust TO56 package, designed to deliver exceptional performance for a variety of applications. This laser diode is engineered to provide a continuous optical output power of 80 mW, making it a reliable choice for precision tasks. With a typical emission wavelength of 520 ...

Specifications

Center Wavelength: 0.52 um
Output Power: 80 mW
Operating Temperature Range: -20 °C to 60 °C
Storage Temperature Range: -40 °C to 85 °C
Junction Temperature Max: 120 °C
The PLT5 450B is a cutting-edge blue laser diode housed in a robust TO56 metal can package. This advanced component is designed to deliver exceptional performance with a continuous optical output power of 80 mW, making it a reliable choice for various high-precision applications. Its typical emission wavelength of 450 nm ensures it ...

Specifications

Center Wavelength: 0.45 um
Output Power: 80 mW
Operating Temperature Range: -40 °C to 70 °C
Storage Temperature Range: -40 °C to 85 °C
Junction Temperature Max: 150 °C
This 635nm red diode laser produces 600mW from a 150um emitter in the free space packages or 480mW from the fiber in the fiber coupled packages. It has a low threshold current and high slope efficiency, which results in a low operating current which enhances reliability.

Specifications

Center Wavelength: 0.635 um
Output Power: 600 mW
Emitter Size: 150 um
This 1210nm red diode laser produces 1500mW from a 50um emitter in the free space packages or 1200mW from the fiber in the fiber coupled packages. It has a low threshold current and high slope efficiency, which results in a low operating current which enhances reliability.

Specifications

Center Wavelength: 1.21 um
Output Power: 1500 mW
This 665nm red diode laser produces 750mW from a 100um emitter in the free space packages or 600mW from the fiber in the fiber coupled packages. It has a low threshold current and high slope efficiency, which results in a low operating current which enhances reliability.

Specifications

Center Wavelength: 0.665 um
Output Power: 750 mW
Emitter Size: 100 um
High-power diode laser bars for the most demanding applications. They are extremely reliable, efficient, and durable. This high power laser diode bar is available on the standard CS package. Other package options are available upon request. Our semiconductor products are easily assembled using standard soldering methods. The material ...

Specifications

Center Wavelength: 1.064 um
Output Power: 40000 mW
Operating Current: 30000 mA
These high power laser diodes feature a low threshold current and high slope efficiency resulting in a low operating current enhancing reliability. Available in standard package types and custom packages if needed. Suitable for various opto-electronic applications.

Specifications

Center Wavelength: 1.55 um
Output Power: 650 mW
High-power diode laser bars for the most demanding applications. They are extremely reliable, efficient, and durable. This high power laser diode bar is available on the standard CS package. Other package options are available upon request. Our semiconductor products are easily assembled using standard soldering methods. The material ...

Specifications

Center Wavelength: 1.064 um
Output Power: 40 mW
Operating Current: 30000 mA
The 780.241 nm Distributed Bragg Reflector (DBR) Laser Diode from Photodigm is engineered for high-precision applications in atomic spectroscopy, particularly for rubidium (Rb) atom-based experiments. Utilizing Photodigm's advanced monolithic single-frequency Gallium Arsenide (GaAs) technology, this laser provides a single spatial ...

Specifications

Center Wavelength: 0.78 um
Output Power: 10 mW
Operating Current, Max (CW & Pulsed): 250 mA
Optical Power At Max Operating Current: 180 mW
Storage Temperature: 0 to +45 °C
The Photodigm 770.108 nm DBR Laser Diode is a high-performance, single-frequency laser designed for precision atomic spectroscopy applications, particularly potassium (K) D1 transition experiments. Built on Photodigm’s advanced monolithic Gallium Arsenide (GaAs) platform, this distributed Bragg reflector (DBR) laser delivers a ...

Specifications

Center Wavelength: 0.77 um
Output Power: 40 mW
Operating Current, Max (CW & Pulsed): 200 mA
Optical Power At Max Operating Current: 100 mW
Storage Temperature: 0 to +70 °C
The Photodigm 730 nm DBR Laser Diode is a high-performance edge-emitting laser designed using advanced monolithic single-frequency Gallium Arsenide (GaAs) technology. It delivers a single spatial mode beam with passivated facets for enhanced reliability. This diode provides high power output, excellent stability, and precise ...

Specifications

Center Wavelength: 0.73 um
Output Power: 40 mW
Operating Current, Max (CW & Pulsed): 200 mA
Optical Power At Max Operating Current: 80 mW
Storage Temperature: 0 to +70 °C