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CW Semiconductor Lasers

The EEL M10 module features a 650nm diode laser that boasts an aluminum anode appearance treatment. This ensures scratch resistance, corrosion resistance, and high voltage resistance. With a wide operating voltage range and 2.5mW power output, it offers superior heat dissipation, resulting in an extended laser life. Designed with ...

Specifications

Center Wavelength: 0.65 um
Output Power: 1.8~2.5 mW
CW Optical Power: 1.8 mW
Operating Current: 35 mA
Operating Voltage: 3 V
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Data Sheet
Experience cutting-edge technology with the SemiNex SMX19XX Laser Diode, engineered to deliver unparalleled performance in the infrared spectrum. With a meticulously crafted design optimized for wavelengths ranging between 12xx and 19xx nm, this laser diode stands at the forefront of innovation. Boasting a power output of 1.10 watts ...

Specifications

Center Wavelength: 1.940 um
Output Power: 1100 mW
Chip Cavity Length (CL): 1500 μm
Emitter Width (W): 150 μm
Emitter Height (H): 1 μm
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Data Sheet
SemiNex SMX15XX Laser Diode delivers exceptional power and precision with wavelengths ranging from 12xx to 19xx nm, catering to various industrial and medical applications. Engineered for reliability, these laser diodes undergo rigorous testing to meet the highest performance standards. With customizable options available, SemiNex ...

Specifications

Center Wavelength: 1.565 um
Output Power: 400 mW
Chip Cavity Length: 2500 μm
Emitter Width: 4 μm
Emitter Height: 1 μm
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Data Sheet
The Non-Pulsed TO9 High Power Single-Mode and Multi-Mode Laser Diode by SemiNex represents a pinnacle of performance in the infrared spectrum, spanning wavelengths from 12xx to 19xx nm. Engineered with meticulous attention to detail, these laser diodes are optimized to meet the specific optical and electrical requirements of diverse ...

Specifications

Center Wavelength: 1.480 um
Output Power: 1800 mW
Chip Cavity Length: 2500 μm
Emitter Width: 95 μm
Emitter Height: 1 μm
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Data Sheet
SemiNex offers high-power infrared lasers with wavelengths ranging from 12xx to 19xx nm. These lasers are designed to deliver superior optical and electrical performance, with options for customization to meet specific customer requirements. The C-Mount design ensures cost-effectiveness and versatility for various applications, ...

Specifications

Center Wavelength: 1.480 um
Output Power: 5000 mW
Chip Cavity Length: 2500 μm
Emitter Width: 95 µm
Emitter Height: 1 μm
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Data Sheet
The UniMir 11.3µm Quantum Cascade Laser offers exceptional precision in the detection of CH3i gas, particularly suited for applications within the nuclear industry. With its DFB single-mode operation and 10mW continuous-wave output power, this laser ensures high sensitivity and accuracy. Its mode-hop-free tuning range of over ...

Specifications

Center Wavelength: 11.3 um
Output Power: 10.0 mW
Laser Type: QCL single mode DFB
Mode Of Operation: CW
Full Accessible Wavelength Range: ~3 cm-1
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Data Sheet
The UniMir 13.4µm Quantum Cascade Laser (QCL) is an advanced gas sensing laser meticulously crafted for the precise detection of xylene and propane. Boasting a single-mode distributed feedback (DFB) design, this laser operates in continuous-wave (CW) mode, delivering a robust output power of 5mW with exceptional ...

Specifications

Center Wavelength: 13.4 um
Output Power: 5.0 mW
Laser Type: QCL single mode DFB
Mode Of Operation: CW
Full Accessible Wavelength Range: ~3 cm-1
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Data Sheet
The UniMir 14.0µm Quantum Cascade Laser (QCL) is a cutting-edge solution tailored for hydrogen cyanide (HCN) detection applications. Operating in continuous-wave (CW) mode, it delivers a stable output power of 5mW with remarkable precision and reliability. Featuring a narrow linewidth of <100MHz and a mode-hop-free tuning ...

Specifications

Center Wavelength: 14.0 um
Output Power: 5.0 mW
Laser Type: QCL single mode DFB
Mode Of Operation: CW
Full Accessible Wavelength Range: ~3 cm-1
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Data Sheet
Experience unparalleled power and precision with the SemiNex SMX19XX Laser Diode (1.9μm) - C-Mount. Crafted to deliver exceptional performance in the infrared spectrum, this laser diode offers a perfect blend of efficiency and cost-effectiveness. With output power reaching up to 1.10 watts (CW), it meets the demanding ...

Specifications

Center Wavelength: 1.940 um
Output Power: 1100 mW
Chip Cavity Length: 1500 μm
Emitter Width: 150 μm
Emitter Height: 1 μm
...
Data Sheet
The EEL M6.5 is a premier 650nm diode laser module known for its unmatched optical quality and clarity. Designed for precision, this module guarantees high stability and delivers a consistently robust optical output power, making it a leader in the 650nm category. One of its standout features is its remarkable shock resistance ...

Specifications

Center Wavelength: 0.650 um
Output Power: 0.5-0.9 mW
CW Optical Power: 0.5 mW
Operating Current: 20 mA
Operating Voltage: 2.4 V
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Data Sheet
Our laser modules are tailored to your unique needs, offering a versatile spectrum of wavelengths from vivid red, green, and blue to even invisible light. Catering to a vast array of applications - be it ranging, positioning, PM2.5 detection, or 3D printing - we've got a product that fits your requirements. At LECC, we don't just ...

Specifications

Center Wavelength: 0.405 um
Output Power: 50 mW
CW Optical Power: 50 mW
Operating Current: 200 mA
Operating Voltage: 5 V
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Data Sheet
The Motorized Focal Length Laser Module M18 AP45600001 offers unparalleled flexibility and precision, supported by APC and TEC temperature control feedback circuits. With this module, users can effortlessly adjust the focal length, power, wavelength, and temperature through intuitive software settings, ensuring precise application ...

Specifications

Center Wavelength: 0.45 um
Output Power: 0~70 mW
CW Optical Power: 70 mW
Operating Current: 20 mA
Operating Voltage: 6 V
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Data Sheet
Unveiling the future of laser technology with the SMD Laser Module AD65040009. Standing out in its class, it's the industry's most compact laser module, radiating at 650nm with a power of 4mW. This pioneering module challenges past laser stereotypes, offering unparalleled compactness without compromising on optical ...

Specifications

Center Wavelength: 0.65 um
Output Power: 4 mW
CW Optical Power: 2.5 mW
Operating Current: 17 mA
Operating Voltage: 2.2 V
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Data Sheet
Boasting a compact design at 3.4x3.3mm, this 650nm wavelength laser diode is ideal for lightweight and space-efficient applications. With a powerful 3.5mW optical output, its Surface Mount Device (SMD) welding construction is primed for seamless integration in automated production processes, enhancing productivity by minimizing ...

Specifications

Center Wavelength: 0.65 um
Output Power: 3.5 mW
Threshold Current: 12 mW
Operating Current: 17 mA
Operating Voltage: 2.2 V
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Data Sheet
The EEL series from Dishen Electronics introduces a state-of-the-art diode laser module with a diameter of just 6mm. Standing out as the most compact in our standard public version modules, this semiconductor laser uniquely combines precision and miniaturization. Primarily designed for applications like signal processing, sensing, ...

Specifications

Center Wavelength: 0.658 um
Output Power: 3~4 mW
CW Optical Power: 3 mW
Operating Current: 45 mA
Operating Voltage: 3.3 V
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Data Sheet
Introducing the EEL M8 Laser Module (650nm | 0.55~0.75mW) - the epitome of precision and efficiency in the world of industrial laser technology. With a focus on delivering a consistent and stable light quality, this module ensures unparalleled light uniformity. Its uniquely designed short focal length optimizes mechanism space, ...

Specifications

Center Wavelength: 0.65 um
Output Power: 0.55~0.75 mW
CW Optical Power: 0.6 mW
Operating Current: 22 mA
Operating Voltage: 5 V
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Data Sheet
Discover the unparalleled performance of our 650nm diode laser module, EEL M12. Renowned for its superior heat dissipation, this module is powered by an advanced APC circuit ensuring a consistently stable optical power output. With a sturdy structure crafted from a high-quality aluminum anode finish, this laser module not only boasts ...

Specifications

Center Wavelength: 0.65 um
Output Power: 1~2 mW
CW Optical Power: 1 mW
Operating Current: 200 mA
Operating Voltage: 3 V
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Data Sheet
The M15 EEL Laser Module (450nm | 40~80mW) is a state-of-the-art laser device designed for precision and versatility. It incorporates an APC circuit that ensures unwavering light output power, setting it apart as a premium adjustable focus module. Depending on the unique demands of your site conditions, this module offers ...

Specifications

Center Wavelength: 0.45 um
Output Power: 40~80 mW
CW Optical Power: 40 mW
Operating Current: 50 mA
Operating Voltage: 12 V
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Data Sheet
Introducing the Narrow Linewidth Laser Module, P/N RZ-13-C34-10-FA-1-3kHz, designed for high precision applications in various fields such as distributed optical fiber sensing, optical fiber hydrophones, LIDAR, and scientific research. Our laser module features an external cavity semiconductor structure that offers narrow line-width, ...

Specifications

Center Wavelength: 1.550 um
Output Power: 16 mW
Power Stability: -0.5 to 0.5 dB
Optical Signal To Noise Ration (SNR): 60 dB
Polarization Extinction Ratio: 60 dB
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Data Sheet
1920nm 700mW Laser Diode E-mount without PD RoHS Module WSLD-1920-700m-E Multi-mode

Specifications

Center Wavelength: 1920 um
Output Power: 700 mW
Data Sheet
The LaserBoxx HPE series is a high-power multimode CW laser series from Oxxius featuring excellent performance and reliability in a compact, fully integrated laser module.  With power levels in the 100’s of mW range to +2W, the LaserBoxx HPE is available at wavelengths of 375 to 940nm. The LaserBoxx series is designed with ...

Specifications

Center Wavelength: 0.638 um
Output Power: 1100 mW
Data Sheet
The LBX-638-XXX-CSB laser diode module is part of the LaserBoxx low noise series of CW DPSS laser and laser diode modules available at a variety of wavelengths from 375nm through 980nm.  The LBX lasers are a fully integrated laser diode solution that provides an extremely stable, <0.2% rms, TEM00 output beam with ...

Specifications

Center Wavelength: 0.638 um
Output Power: 180 mW
Data Sheet
The LBX-638-XXX-CSB laser diode module is part of the LaserBoxx low noise series of CW DPSS laser and laser diode modules available at a variety of wavelengths from 375nm through 980nm.  The LBX lasers are a fully integrated laser diode solution that provides an extremely stable, <0.2% rms, TEM00 output beam with ...

Specifications

Center Wavelength: 0.638 um
Output Power: 150 mW
Data Sheet
The LaserBoxx HPE series is a high-power multimode CW laser series from Oxxius featuring excellent performance and reliability in a compact, fully integrated laser module.  With power levels in the 100’s of mW range to +2W, the LaserBoxx HPE is available at wavelengths of 375 to 940nm.  The LaserBoxx series is ...

Specifications

Center Wavelength: 0.785 um
Output Power: 800 mW
Data Sheet
The LBX lasers are a fully integrated laser diode solution that provides an extremely stable, <0.2% rms, TEM00 output beam with outstanding pointing stability, and fast modulation capabilities.  The LCX/LPX lasers are self-contained modules that utilize Oxxius’ proprietary alignment-free monolithic resonator. The ...

Specifications

Center Wavelength: 0.785 um
Output Power: 350 mW
Data Sheet

Frequently Asked Questions

Facet coating is a technique used to reduce the reflectivity of the laser cavity's end facets, which can cause optical feedback and degrade the laser's performance. By applying a thin layer of anti-reflective coating to the facets, the reflectivity can be minimized, resulting in higher output powers, better beam quality, and improved reliability.

Temperature and current are critical parameters that can affect the performance and lifetime of CW semiconductor lasers. High operating temperatures can cause degradation and failure of the laser due to increased thermal stress, while high currents can lead to increased heating, decreased efficiency, and premature aging. Careful control of temperature and current is essential for optimizing the performance and reliability of CW semiconductor lasers.

Yes, CW diode lasers are commonly used in medical and scientific applications, including biomedical imaging, microscopy, and spectroscopy. Their high efficiency, compact size, and ease of integration make them well-suited for these applications, where precise and reliable performance is critical.

Wavelength stabilization is a technique used to stabilize the output wavelength of CW semiconductor lasers by using a feedback mechanism to compensate for changes in temperature or current. This results in a more stable and consistent output wavelength, which is critical for applications such as optical communications and spectroscopy.

Quantum well design is a technique used to improve the efficiency and output power of CW semiconductor lasers by using a series of ultra-thin semiconductor layers to confine the electrons and holes in the laser's active region. This results in a higher gain, lower threshold current, and reduced heating, which can improve the laser's performance and lifetime.

Distributed feedback (DFB) lasers are a type of CW semiconductor laser that use a grating structure to provide feedback for the laser cavity. This results in a single-mode output with high spectral purity and narrow linewidth. DFB lasers are widely used in optical communications and sensing applications, where stable and precise performance is critical.

External modulation is a technique used to improve the performance of CW diode lasers by modulating the input signal externally, rather than directly modulating the laser itself. This can improve the laser's bandwidth, reduce noise, and enable higher data rates in optical communications and data networking applications.

Gain-switched lasers are a type of CW semiconductor laser that use a pulsed current to achieve a high peak power output. They offer several advantages over other types of CW semiconductor lasers, including higher peak powers, faster rise times, and lower costs. Gain-switched lasers are used in a variety of applications, including range finding, LIDAR, and materials processing.

There are 937 different CW Semiconductor Lasers from suppliers and manufacturers listed in this category. In just a few clicks you can compare different CW Semiconductor Lasers with each other and get an accurate quote based on your needs and specifications. Please note that the prices of CW Semiconductor Lasers vary significantly for different products based on various factors including technical parameters, features, brand name, etc. Please contact suppliers directly to inquire about the details and accurate pricing information for any product model. Simply navigate to the product page of interest and use the orange button to directly reach out to the respective supplier with one click.

Did You know?

The first useful semiconductor laser was made by R.N. Hall in 1962 which was composed of GaAs materials that emitted in near infrared at 0.8 µm. The semiconductor laser is similar to transistor, has the appearance of a LED but the output beam has the characteristics of a laser. The application that was the main driving force in the development of semiconductor lasers was in the field of long distance communications but at this moment the use of this laser in compact disc players constitutes their largest single market. Using semiconductor laser gives an advantage of low power consumption requirements.