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Thorlabs' ULN15TK Turnkey, Ultra-Low-Noise (ULN) Laser System is a ready-to-use laser system that integrates our ULN15PC laser, which has a patented fiber Bragg grating (FBG) based design, with a low-noise driver and temperature stabilization inside of a benchtop housing. This turnkey laser system provides ...
  • Center Wavelength: 1.55 um
  • Output Power: >90 mW
  • Center Wavelength: 1550 nm
  • Linewidth (Lorentzian): <250 (Typ. 100) Hz
  • Power: >90 (Typ. 120) mW
  • ...
Data Sheet
The TopWave 405 is the ideal replacement for the bulky and power hungry Krypton ion (406.7 nm and 413.1 nm) gas lasers commonly used in lithographic and holographic applications. The TopWave 405 provides 1 W output power at 405 nm combined with an excellent beam quality. Beam diameter and M² (typ. 1.15) are designed to match the ...
  • Center Wavelength: 405 um
  • Output Power: 1000 mW
Data Sheet
LDX-3310-808 is a 808nm Multimode Laser Diode. This 808nm diode laser produces 3000mW from a 100um emitter in the free space packages or 2400mW from the fiber in the fiber coupled packages. It has a low threshold current and high slope efficiency, which results in a low operating current which enhances reliability. The die ...
  • Center Wavelength: 0.808 um
  • Output Power: 3000 mW
  • Emitter Size: 100 um
  • Output From Fiber: 2400 mW
  • Min Fiber Size HHL & BTF: 100 um
  • ...
Data Sheet
EP1550-NLW-B is a 1550nm Narrow Linewidth Laser Diode from Eblana Photonics. It features an ultra-narrow linewidth (<130kHz) making it ideal for coherent communications and metrology applications. Eblana’s Discrete-Mode (DM) technology enables excellent SMSR and tunability at a highly competitive ...
  • Center Wavelength: 1.550 um
  • Output Power: 5 mW
  • Optical Linewidth: 100 kHz
  • Wavelength Tolerance : +/- 2 nm
  • Side Mode Suppression Ratio (SMSR): 40 dB
  • ...
Data Sheet
This 1550nm red diode laser produces 800mW from a 35um emitter in the free space packages or 640mW from the fiber in the fiber coupled packages. It has a low threshold current and high slope efficiency, which results in a low operating current which enhances reliability.
  • Center Wavelength: 1.55 um
  • Output Power: 800 mW
  • Package Types: Chip on Carrier, C-Mount, B-Mount, Q-Mount, 9mm, TO-3 no TEC, HHL, 9mm SMA, 2-Pin FC, 8-pin HHL, 9-pin HHL 
Data Sheet
This 1550nm red diode laser produces 1000mW from a 60um emitter in the free space packages or 800mW from the fiber in the fiber coupled packages. It has a low threshold current and high slope efficiency, which results in a low operating current which enhances reliability.
  • Center Wavelength: 1.55 um
  • Output Power: 1000 mW
  • Package Types: Chip on Carrier, C-Mount, B-Mount, Q-Mount, 9mm, TO-3 no TEC, HHL, 9mm SMA, 2-Pin FC, 8-pin HHL, 9-pin HHL 
Data Sheet
Ushio Opto Semiconductor (Ushio/Opnext Laser Diodes) are available from 405nm to 850nm at various power levels.  HL40033G ( 1000mW, 405nm)  violet diode is ideal for imaging, biomedical and industrial applications. Also available HL40071MG, a new single mode 405nm diode from Ushio with a max power of 300 mW. Ushio red ...
  • Center Wavelength: 0.638 um
  • Output Power: 2400 mW
Data Sheet
Ushio Opto Semiconductor (Ushio/Opnext Laser Diodes) are available from 405nm to 850nm at various power levels.  HL40033G ( 1000mW, 405nm)  violet diode is ideal for imaging, biomedical and industrial applications. Also available HL40071MG, a new single mode 405nm diode from Ushio with a max power of 300 mW. Ushio red ...
  • Center Wavelength: 0.638 um
  • Output Power: 2200 mW
Data Sheet
Ushio Opto Semiconductor (Ushio/Opnext Laser Diodes) are available from 405nm to 850nm at various power levels.  HL40033G ( 1000mW, 405nm)  violet diode is ideal for imaging, biomedical and industrial applications. Also available HL40071MG, a new single mode 405nm diode from Ushio with a max power of 300 mW. Ushio red ...
  • Center Wavelength: 0.638 um
  • Output Power: 1000 mW
Data Sheet
Ushio Opto Semiconductor (Ushio/Opnext Laser Diodes) are available from 405nm to 850nm at various power levels.  HL40033G ( 1000mW, 405nm)  violet diode is ideal for imaging, biomedical and industrial applications. Also available HL40071MG, a new single mode 405nm diode from Ushio with a max power of 300 mW. Ushio red ...
  • Center Wavelength: 0.639 um
  • Output Power: 200 mW
Data Sheet
Ushio Opto Semiconductor (Ushio/Opnext Laser Diodes) are available from 405nm to 850nm at various power levels.  HL40033G ( 1000mW, 405nm)  violet diode is ideal for imaging, biomedical and industrial applications. Also available HL40071MG, a new single mode 405nm diode from Ushio with a max power of 300 mW. Ushio red ...
  • Center Wavelength: 0.638 um
  • Output Power: 150 mW
Data Sheet
Ushio Opto Semiconductor (Ushio/Opnext Laser Diodes) are available from 405nm to 850nm at various power levels.  HL40033G ( 1000mW, 405nm)  violet diode is ideal for imaging, biomedical and industrial applications. Also available HL40071MG, a new single mode 405nm diode from Ushio with a max power of 300 mW. Ushio red ...
  • Center Wavelength: 0.638 um
  • Output Power: 170 mW
Data Sheet
Ushio Opto Semiconductor (Ushio/Opnext Laser Diodes) are available from 405nm to 850nm at various power levels.  HL40033G ( 1000mW, 405nm)  violet diode is ideal for imaging, biomedical and industrial applications. Also available HL40071MG, a new single mode 405nm diode from Ushio with a max power of 300 mW. Ushio red ...
  • Center Wavelength: 0.637 um
  • Output Power: 120 mW
Data Sheet
Ushio Opto Semiconductor (Ushio/Opnext Laser Diodes) are available from 405nm to 850nm at various power levels.  HL40033G ( 1000mW, 405nm)  violet diode is ideal for imaging, biomedical and industrial applications. Also available HL40071MG, a new single mode 405nm diode from Ushio with a max power of 300 mW. Ushio red ...
  • Center Wavelength: 0.638 um
  • Output Power: 120 mW
Data Sheet
Ushio Opto Semiconductor (Ushio/Opnext Laser Diodes) are available from 405nm to 850nm at various power levels.  HL40033G ( 1000mW, 405nm)  violet diode is ideal for imaging, biomedical and industrial applications. Also available HL40071MG, a new single mode 405nm diode from Ushio with a max power of 300 mW. Ushio red ...
  • Center Wavelength: 0.638 um
  • Output Power: 7 mW
Data Sheet
Ushio Opto Semiconductor (Ushio/Opnext Laser Diodes) are available from 405nm to 850nm at various power levels.  HL40033G ( 1000mW, 405nm)  violet diode is ideal for imaging, biomedical and industrial applications. Also available HL40071MG, a new single mode 405nm diode from Ushio with a max power of 300 mW. Ushio red ...
  • Center Wavelength: 0.638 um
  • Output Power: 200 mW
Data Sheet
Ushio Opto Semiconductor (Ushio/Opnext Laser Diodes) are available from 405nm to 850nm at various power levels.  HL40033G ( 1000mW, 405nm)  violet diode is ideal for imaging, biomedical and industrial applications. Also available HL40071MG, a new single mode 405nm diode from Ushio with a max power of 300 mW. Ushio red ...
  • Center Wavelength: 0.637 um
  • Output Power: 450 mW
Data Sheet
Ushio Opto Semiconductor (Ushio/Opnext Laser Diodes) are available from 405nm to 850nm at various power levels.  HL40033G ( 1000mW, 405nm)  violet diode is ideal for imaging, biomedical and industrial applications. Also available HL40071MG, a new single mode 405nm diode from Ushio with a max power of 300 mW. Ushio red ...
  • Center Wavelength: 0.636 um
  • Output Power: 1200 mW
Data Sheet
Ushio Opto Semiconductor (Ushio/Opnext Laser Diodes) are available from 405nm to 850nm at various power levels.  HL40033G ( 1000mW, 405nm)  violet diode is ideal for imaging, biomedical and industrial applications. Also available HL40071MG, a new single mode 405nm diode from Ushio with a max power of 300 mW. Ushio red ...
  • Center Wavelength: 0.639 um
  • Output Power: 30 mW
Data Sheet
Ushio Opto Semiconductor (Ushio/Opnext Laser Diodes) are available from 405nm to 850nm at various power levels.  HL40033G ( 1000mW, 405nm)  violet diode is ideal for imaging, biomedical and industrial applications. Also available HL40071MG, a new single mode 405nm diode from Ushio with a max power of 300 mW. Ushio red ...
  • Center Wavelength: 0.638 um
  • Output Power: 15 mW
Data Sheet
Ushio Opto Semiconductor (Ushio/Opnext Laser Diodes) are available from 405nm to 850nm at various power levels.  HL40033G ( 1000mW, 405nm)  violet diode is ideal for imaging, biomedical and industrial applications. Also available HL40071MG, a new single mode 405nm diode from Ushio with a max power of 300 mW. Ushio red ...
  • Center Wavelength: 0.638 um
  • Output Power: 10 mW
Data Sheet
Ushio Opto Semiconductor (Ushio/Opnext Laser Diodes) are available from 405nm to 850nm at various power levels.  HL40033G ( 1000mW, 405nm)  violet diode is ideal for imaging, biomedical and industrial applications. Also available HL40071MG, a new single mode 405nm diode from Ushio with a max power of 300 mW. Ushio red ...
  • Center Wavelength: 0.638 um
  • Output Power: 10 mW
Data Sheet
Ushio Opto Semiconductor (Ushio/Opnext Laser Diodes) are available from 405nm to 850nm at various power levels.  HL40033G ( 1000mW, 405nm)  violet diode is ideal for imaging, biomedical and industrial applications. Also available HL40071MG, a new single mode 405nm diode from Ushio with a max power of 300 mW. Ushio red ...
  • Center Wavelength: 0.638 um
  • Output Power: 5 mW
Data Sheet
Ushio Opto Semiconductor (Ushio/Opnext Laser Diodes) are available from 405nm to 850nm at various power levels.  HL40033G ( 1000mW, 405nm)  violet diode is ideal for imaging, biomedical and industrial applications. Also available HL40071MG, a new single mode 405nm diode from Ushio with a max power of 300 mW. Ushio red ...
  • Center Wavelength: 0.633 um
  • Output Power: 100 mW
Data Sheet
Ushio Opto Semiconductor (Ushio/Opnext Laser Diodes) are available from 405nm to 850nm at various power levels.  HL40033G ( 1000mW, 405nm)  violet diode is ideal for imaging, biomedical and industrial applications. Also available HL40071MG, a new single mode 405nm diode from Ushio with a max power of 300 mW. Ushio red ...
  • Center Wavelength: 0.405 um
  • Output Power: 300 mW
Data Sheet

Did You know?

The first useful semiconductor laser was made by R.N. Hall in 1962 which was composed of GaAs materials that emitted in near infrared at 0.8 µm. The semiconductor laser is similar to transistor, has the appearance of a LED but the output beam has the characteristics of a laser. The application that was the main driving force in the development of semiconductor lasers was in the field of long distance communications but at this moment the use of this laser in compact disc players constitutes their largest single market. Using semiconductor laser gives an advantage of low power consumption requirements.