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Page 6 - CW Semiconductor Lasers

LDX-3105-1064: 1064nm 1500mW Multimode Laser Diode
RPMC Lasers, Inc.
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LDX-3105-1064: 1064nm 1500mW Multimode Laser Diode
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The LDX Optronics 1064–1850 nm Laser Diode Series delivers high-power, high-reliability solutions for demanding infrared applications. Covering a broad near-IR to mid-IR wavelength range, these laser diodes are engineered with precision emitter sizes and are available in free-space or fiber-coupled configurations. Designed for ...

Specifications
Center Wavelength: 1.064 um
Output Power: 1500 mW
Emitter Size: 50 um
Min Fiber Size HHL & BTF: 100 um
Min Fiber Size 9mm SMA: 200 um
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LDX-3105-1550: Multimode Laser Diode 1550nm
RPMC Lasers, Inc.
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LDX-3105-1550: Multimode Laser Diode 1550nm
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The LDX Optronics 1064–1850 nm Laser Diode Series delivers high-power, high-reliability solutions for demanding infrared applications. Covering a broad near-IR to mid-IR wavelength range, these laser diodes are engineered with precision emitter sizes and are available in free-space or fiber-coupled configurations. Designed for ...

Specifications
Center Wavelength: 1.55 um
Output Power: 1000 mW
Package Types: Chip on Carrier, C-Mount, B-Mount, Q-Mount, 9mm, TO-3 no TEC, HHL, 9mm SMA, 2-Pin FC, 8-pin HHL, 9-pin HHL
Operating Temperature: 25 °C
Threshold Current (mA) Typ: 350 mA
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LDX-2410-645: 645nm 400mW Multimode Laser Diode
RPMC Lasers, Inc.
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LDX-2410-645: 645nm 400mW Multimode Laser Diode
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The LDX Optronics 445–665 nm Laser Diode Series delivers exceptional performance for precision optical applications, offering a broad range of wavelengths, emitter sizes, and output powers. Designed for both free-space and fiber-coupled configurations, these laser diodes feature high optical output, excellent beam quality, and ...

Specifications
Center Wavelength: 0.645 um
Output Power: 400 mW
Emitter Size: 100 um
Min Fiber Size HHL & BTF: 100 um
Min Fiber Size 9mm SMA: 250 um
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LDX-2205-627: 627nm 250mW Multimode Laser Diode
RPMC Lasers, Inc.
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LDX-2205-627: 627nm 250mW Multimode Laser Diode
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The LDX Optronics 445–665 nm Laser Diode Series delivers exceptional performance for precision optical applications, offering a broad range of wavelengths, emitter sizes, and output powers. Designed for both free-space and fiber-coupled configurations, these laser diodes feature high optical output, excellent beam quality, and ...

Specifications
Center Wavelength: 0.627 um
Output Power: 250 mW
Emitter Size: 50 um
Min Fiber Size HHL & BTF: 100 um
Min Fiber Size 9mm SMA: 200 um
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808nm High Stability Single-mode Pump Laser Source
Connet Laser Technology Co., Ltd.
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808nm High Stability Single-mode Pump Laser Source
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Connet VENUS series 808nm single-mode pump laser source uses a single-mode semiconductor laser with FBG wavelength- stabilized grating, which has stable wavelength and high output power.     The control system based on the advanced microprocessor, combined with high-precision ATC and ACC (APC) control circuits, ...

Specifications
Center Wavelength: 0.808 um
Output Power: 250 mW
Dimensions: 340(L) x 240(W) x 100(H) mm
Storage Temperature: -40 to +85 ℃
Operating Temperature: 0 to +50 ℃
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LDX-4224-750: 750nm Laser Diode Bar Package
RPMC Lasers, Inc.
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LDX-4224-750: 750nm Laser Diode Bar Package
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High-power diode laser bars for the most demanding applications. They are extremely reliable, efficient, and durable. This high power laser diode bar is available on the standard CS package. Other package options are available upon request. Our semiconductor products are easily assembled using standard soldering methods. The ...

Specifications
Center Wavelength: 0.75 um
Output Power: 20000 mW
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10W 808nm C-mount Single Emitter Diode Laser
Hangzhou Brandnew Technology Co., Ltd.
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10W 808nm C-mount Single Emitter Diode Laser
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CM808DL10 is a high-quality C-mount package laser diode, which Fabry-Perot laser based on state-of-the-art, quantum-well epitaxial layer growth and reliable ridge waveguide structure.    CM808DL5/CM808DL10 is easy to mount and provides good thermal contact, making it an ideal choice for high power and OEM ...

Specifications
Center Wavelength: 0.808 um
Output Power: 10000 mW
Operating Current Iop: 5 A
Threshold Current Ith: 0.3 A
Operating Voltage Vop: 2 V
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0520L-11A-NI-NT-NF: Laser Diode Module, 520nm, 80mW, Free Space
RPMC Lasers, Inc.
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0520L-11A-NI-NT-NF: Laser Diode Module, 520nm, 80mW, Free Space
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The Matchbox series of laser diode modules offer excellent performance and reliability in an ultra-compact “all-in-one” driver integrated laser head. The 520L-1XA CW version is a 520nm low noise diode laser with up to 80mW output power. This green laser module comes standard with internal voltage up-conversion that allows ...

Specifications
Center Wavelength: 0.52 um
Output Power: 80 mW
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0785L-11A-NI-NT-NF: Laser Diode Module, 785nm, 170mW, Free Space
RPMC Lasers, Inc.
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0785L-11A-NI-NT-NF: Laser Diode Module, 785nm, 170mW, Free Space
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The 785L-1XA CW version is a 785nm low noise diode laser with up to 170mW output power. This NIR laser module comes standard with internal voltage up-conversion that allows a 5V power supply while maintaining low noise operation. The monolithic design of these laser diode modules features thermally stabilized optics in a hermetically ...

Specifications
Center Wavelength: 0.785 um
Output Power: 170 mW
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0808L-11A-NI-NT-NF: Laser Diode Module, 808nm, 110mW, Free Space
RPMC Lasers, Inc.
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0808L-11A-NI-NT-NF: Laser Diode Module, 808nm, 110mW, Free Space
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The 808L-1XA CW version is a 808nm low noise diode laser with up to 110mW output power. This NIR laser module comes standard with internal voltage up-conversion that allows a 5V power supply while maintaining low noise operation. The monolithic design of these laser diode modules features thermally stabilized optics in a hermetically ...

Specifications
Center Wavelength: 0.808 um
Output Power: 110 mW
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SDL-488-LM-XXXT: 488nm Blue Diode Laser (1-50mW)
Shanghai Dream Lasers Technology Co., Ltd.
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SDL-488-LM-XXXT: 488nm Blue Diode Laser (1-50mW)
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The SDL-488-LM-XXXT is a compact and reliable blue diode laser, producing high-quality laser output at 488nm wavelength. With single mode LD mode and near TEM00 beam spot outline, it provides stable and accurate performance for a wide range of applications in research, industry, and medical fields. The laser also features a TTL ...

Specifications
Center Wavelength: 0.488 um
Output Power: 1 mW
LD Mode: Single Mode
Operation Mode: CW
Power Stability: < 5 %
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High-Power Red Diode Lasers Emitting at 680nm with Customizable Options
Shanghai Dream Lasers Technology Co., Ltd.
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High-Power Red Diode Lasers Emitting at 680nm with Customizable Options
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The SDL-680-LM-XXXT is a high-performance red diode laser emitting at 680nm with an output power of 1-1000mW. It features TTL modulation and customizable options such as power stability, analog modulation, line output versions, and detachable fiber-coupled systems. The SDL-680-LM-XXXMFL is a fiber-coupled version of the same laser, ...

Specifications
Center Wavelength: 0.68 um
Output Power: 1000 mW
LD Mode: Multi Mode
Operation Mode: CW
Power Stability Over 2 Hours After Warm-up: < 5 %
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50W 808nm Diode Laser with Customizable Options
Shanghai Dream Lasers Technology Co., Ltd.
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50W 808nm Diode Laser with Customizable Options
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The SDL-808-LM-50000T is a high-power diode laser system emitting at 808nm. With an output power of 50W, this laser is designed for a wide range of industrial and scientific applications. It features TTL modulation and customizable options such as longer operation periods, improved power stability, analog modulation, line output ...

Specifications
Center Wavelength: 0.808 um
Output Power: 4000000 mW
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High-Powered SDL-980-LM-XXXT 980nm Diode Laser for Precision Applications
Shanghai Dream Lasers Technology Co., Ltd.
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High-Powered SDL-980-LM-XXXT 980nm Diode Laser for Precision Applications
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Introducing the SDL-980-LM-XXXT 980nm Diode Laser from Shanghai Dream Lasers Technology Co., Ltd. This powerful and versatile laser offers an output power range of 8000-15000mW with a wavelength of 980±5nm, making it ideal for a range of precision applications. The SDL-980-LM-XXXT model features multi-mode LD mode and ...

Specifications
Center Wavelength: 0.98 um
Output Power: 15000 mW
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USHIO HL63290HD 638nm 2200mW Laser Diode
The Optoelectronics Company Ltd
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USHIO HL63290HD 638nm 2200mW Laser Diode
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The HL63290HD is a high-performance AlGaInP laser diode designed to deliver exceptional optical output power and reliability. With a typical wavelength of 638nm, this laser diode is engineered to meet the demanding requirements of various optical applications. Its robust construction ensures high heat dissipation, thanks to the φ9mm ...

Specifications
Center Wavelength: 0.638 um
Output Power: 2200 mW
Optical Output Power (Pulse): 2.5 W
Operating Current: 2.4 A
Pulse Operating Current: 2.5 A
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USHIO HL63520HD 638nm 2400mW Laser Diode
The Optoelectronics Company Ltd
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USHIO HL63520HD 638nm 2400mW Laser Diode
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The HL63520HD is a cutting-edge AlGaInP laser diode designed to deliver exceptional performance in a compact form factor. This laser diode operates at a shorter wavelength of 638nm, making it ideal for applications requiring precise and vibrant red light. With its dual emitter design, the HL63520HD ensures robust optical output ...

Specifications
Center Wavelength: 0.638 um
Output Power: 2400 mW
Pulse Optical Output Power: 3.5 W
Wavelength: 638 nm
LD Reverse Voltage: 2 V
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USHIO HL40033G 405nm 1000mW Laser Diode
The Optoelectronics Company Ltd
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USHIO HL40033G 405nm 1000mW Laser Diode
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The HL400 Violet Laser Diode is a cutting-edge component designed to deliver exceptional performance in a variety of applications. Operating at a wavelength of 405nm, this laser diode is engineered to provide a powerful optical output of up to 1,000mW, making it an ideal choice for industries requiring high precision and reliability. ...

Specifications
Center Wavelength: 0.405 um
Output Power: 1000 mW
Package: f9.0 mm
Operating Temperature: 0 ~ +30 °C
Storage Temperature: -40 ~ +85 °C
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USHIO HL6501MG 658nm 35mW AlGaInP Laser Diode
The Optoelectronics Company Ltd
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USHIO HL6501MG 658nm 35mW AlGaInP Laser Diode
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The HL6501MG is a high-performance AlGaInP laser diode designed to deliver exceptional visible light output at a typical wavelength of 658 nm. This laser diode is engineered to provide a stable and reliable optical output power of 30mW in continuous wave (CW) mode, making it an ideal choice for applications requiring precise and ...

Specifications
Center Wavelength: 0.658 um
Output Power: 35 mW
Operating Temperature: -10 ~ +60 °C
Storage Temperature: -40 ~ +85 °C
Threshold Current: 30-70 mA
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USHIO HL63193MG 638nm 700mW AlGaInP Laser Diode
The Optoelectronics Company Ltd
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USHIO HL63193MG 638nm 700mW AlGaInP Laser Diode
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The HL63193MG is a high-performance laser diode designed to deliver exceptional visible light output at a typical wavelength of 638nm. This laser diode is engineered with advanced AlGaInP technology, ensuring robust and reliable performance. With an impressive optical output power of 700mW in continuous wave (CW) mode, the HL63193MG ...

Specifications
Center Wavelength: 0.638 um
Output Power: 700 mW
Small Package: φ 5.6 mm
Optical Output Power (1): 700 mW
Operating Temperature: -10 ~ +40 °C
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USHIO HL40085G 405nm 1000mW Laser Diode
The Optoelectronics Company Ltd
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USHIO HL40085G 405nm 1000mW Laser Diode
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The HL40085G is a high-performance violet laser diode designed to deliver exceptional optical output power of 1,000mW at a typical wavelength of 405nm. This laser diode is engineered for precision and efficiency, making it an ideal choice for applications requiring high-intensity violet light. Its robust design ensures reliable ...

Specifications
Center Wavelength: 0.405 um
Output Power: 1000 mW
Operating Voltage: 5.0 V
Package: 9.0mm
Optical Output Power (Max): 1,100 mW
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