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Page 3 - CW Semiconductor Lasers

The M15 EEL Laser Module (450nm | 0.75mW) is a state-of-the-art laser device designed for precision and versatility. It incorporates an APC circuit that ensures unwavering light output power, setting it apart as a premium adjustable focus module. Depending on the unique demands of your site conditions, this module offers unparalleled ...

Specifications

Center Wavelength: 0.45 um
Output Power: 0.75 mW
CW Optical Power: 0.75 mW
Operating Current: 50 mA
Operating Voltage: 24 V
The M15 EEL Laser Module (405nm | 150mW) is a state-of-the-art laser device designed for precision and versatility. It incorporates an APC circuit that ensures unwavering light output power, setting it apart as a premium adjustable focus module. Depending on the unique demands of your site conditions, this module offers unparalleled ...

Specifications

Center Wavelength: 0.405 um
Output Power: 150 mW
CW Optical Power: 150 mW
Operating Current: 120 mA
Monitor Current (Iop=120mA): 0.85 mA
The M15 EEL Laser Module (638nm | 100mW) is a state-of-the-art laser device designed for precision and versatility. It incorporates an APC circuit that ensures unwavering light output power, setting it apart as a premium adjustable focus module. Depending on the unique demands of your site conditions, this module offers unparalleled ...

Specifications

Center Wavelength: 0.638 um
Output Power: 100 mW
CW Optical Power: 100 mW
Operating Current: 200 mA
Operating Voltage: 5 V
Boasting a compact design at 3.4x3.3mm, this 650nm wavelength laser diode is ideal for lightweight and space-efficient applications. With a powerful 3.5mW optical output, its Surface Mount Device (SMD) welding construction is primed for seamless integration in automated production processes, enhancing productivity by minimizing ...

Specifications

Center Wavelength: 0.65 um
Output Power: 3.5 mW
Threshold Current: 12 mW
Operating Current: 17 mA
Operating Voltage: 2.2 V
This 1210nm red diode laser produces 1500mW from a 50um emitter in the free space packages or 1200mW from the fiber in the fiber coupled packages. It has a low threshold current and high slope efficiency, which results in a low operating current which enhances reliability.

Specifications

Center Wavelength: 1.21 um
Output Power: 1500 mW
High-power diode laser bars for the most demanding applications. They are extremely reliable, efficient, and durable. This high power laser diode bar is available on the standard CS package. Other package options are available upon request. Our semiconductor products are easily assembled using standard soldering methods. The material ...

Specifications

Center Wavelength: 1.064 um
Output Power: 40000 mW
Operating Current: 30000 mA
This 635nm red diode laser produces 600mW from a 150um emitter in the free space packages or 480mW from the fiber in the fiber coupled packages. It has a low threshold current and high slope efficiency, which results in a low operating current which enhances reliability.

Specifications

Center Wavelength: 0.635 um
Output Power: 600 mW
Emitter Size: 150 um
This 665nm red diode laser produces 750mW from a 100um emitter in the free space packages or 600mW from the fiber in the fiber coupled packages. It has a low threshold current and high slope efficiency, which results in a low operating current which enhances reliability.

Specifications

Center Wavelength: 0.665 um
Output Power: 750 mW
Emitter Size: 100 um
High-power diode laser bars for the most demanding applications. They are extremely reliable, efficient, and durable. This high power laser diode bar is available on the standard CS package. Other package options are available upon request. Our semiconductor products are easily assembled using standard soldering methods. The material ...

Specifications

Center Wavelength: 1.064 um
Output Power: 40 mW
Operating Current: 30000 mA
These high power laser diodes feature a low threshold current and high slope efficiency resulting in a low operating current enhancing reliability. Available in standard package types and custom packages if needed. Suitable for various opto-electronic applications.

Specifications

Center Wavelength: 1.55 um
Output Power: 650 mW
The 828 nm DBR Laser Diode from Photodigm is a high-performance, single-frequency laser designed for precision applications such as LIDAR and water vapor sensing. Based on advanced Gallium Arsenide (GaAs) monolithic technology, this distributed Bragg reflector (DBR) laser provides a single spatial mode beam with excellent spectral ...

Specifications

Center Wavelength: 0.828 um
Output Power: 80 mW
Laser Forward Voltage: 2 V
Operating Current, Max (CW & Pulsed): 250 mA
Optical Power At Max Operating Current: 180 mW
The Photodigm 823 nm DBR Laser Diode is a high-performance, monolithic, single-frequency edge-emitting laser designed for precision optical applications. Engineered with Gallium Arsenide (GaAs) technology, it delivers a stable single spatial mode output with a nominal wavelength of 823 nm. Featuring passivated facets for enhanced ...

Specifications

Center Wavelength: 0.823 um
Output Power: 80 mW
Operating Current, Max (CW & Pulsed): 250 mA
Optical Power At Max Operating Current: 180 mW
Storage Temperature: 0 to +70 °C
The 816 nm DBR Laser Diode from Photodigm is a high-performance edge-emitting laser diode, featuring advanced Gallium Arsenide (GaAs) technology. Designed for precision and reliability, it delivers a stable, single-frequency beam ideal for demanding applications in biomedical diagnostics and imaging. The diode operates at a nominal ...

Specifications

Center Wavelength: 0.816 um
Output Power: 80 mW
Operating Current, Max (CW & Pulsed): 250 mA
Optical Power At Max Operating Current: 180 mW
Storage Temperature: 0 to +70 °C
Product Description (180 words): The 810 nm DBR Laser Diode from Photodigm offers high performance and reliability, utilizing advanced Gallium Arsenide (GaAs) single-frequency laser technology. These edge-emitting diodes provide a high-power output range from 80 mW to 180 mW and are ideal for use in biomedical diagnostics and imaging ...

Specifications

Center Wavelength: 0.81 um
Output Power: 80 mW
Operating Current, Max (CW & Pulsed): 250 mA
Optical Power At Max Operating Current: 180 mA
Storage Temperature: 0 to +75 °C
The 808 nm Series Distributed Bragg Reflector (DBR) Laser Diode is engineered for precision and reliability in high-performance applications. Utilizing Photodigm’s advanced monolithic single-frequency Gallium Arsenide (GaAs) laser technology, this edge-emitting laser diode delivers exceptional performance with a single spatial ...

Specifications

Center Wavelength: 0.808 um
Output Power: 80 mW
Operating Current, Max (CW & Pulsed): 250 mA
Optical Power At Max Operating Current: 180 mW
Storage Temperature: 0 to +75 °C
The 800 nm Distributed Bragg Reflector (DBR) Laser Diode is a high-performance, edge-emitting semiconductor laser designed for applications requiring stable, single-frequency output. Based on Photodigm’s monolithic Gallium Arsenide (GaAs) technology, this laser provides a single spatial mode beam with high output power ranging ...

Specifications

Center Wavelength: 0.8 um
Output Power: 80 mW
Operating Current, Max (CW & Pulsed): 250 mA
Optical Power At Max Operating Current: 180 mW
Storage Temperature: 0 to +75 °C