The 816 nm DBR Laser Diode from Photodigm is a high-performance edge-emitting laser diode, featuring advanced Gallium Arsenide (GaAs) technology. Designed for precision and reliability, it delivers a stable, single-frequency beam ideal for demanding applications in biomedical diagnostics and imaging. The diode operates at a nominal ...
Specifications
|
Center Wavelength: |
0.816 um |
Output Power: |
80 mW |
Operating Current, Max (CW & Pulsed): |
250 mA |
Optical Power At Max Operating Current: |
180 mW |
Storage Temperature: |
0 to +70 °C |