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Page 4 - CW Semiconductor Lasers

USHIO HL63520HD 638nm 2400mW Laser Diode
The Optoelectronics Company Ltd
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USHIO HL63520HD 638nm 2400mW Laser Diode
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The HL63520HD is a cutting-edge AlGaInP laser diode designed to deliver exceptional performance in a compact form factor. This laser diode operates at a shorter wavelength of 638nm, making it ideal for applications requiring precise and vibrant red light. With its dual emitter design, the HL63520HD ensures robust optical output ...

Specifications
Center Wavelength: 0.638 um
Output Power: 2400 mW
Pulse Optical Output Power: 3.5 W
Wavelength: 638 nm
LD Reverse Voltage: 2 V
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USHIO HL40033G 405nm 1000mW Laser Diode
The Optoelectronics Company Ltd
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USHIO HL40033G 405nm 1000mW Laser Diode
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The HL400 Violet Laser Diode is a cutting-edge component designed to deliver exceptional performance in a variety of applications. Operating at a wavelength of 405nm, this laser diode is engineered to provide a powerful optical output of up to 1,000mW, making it an ideal choice for industries requiring high precision and reliability. ...

Specifications
Center Wavelength: 0.405 um
Output Power: 1000 mW
Package: f9.0 mm
Operating Temperature: 0 ~ +30 °C
Storage Temperature: -40 ~ +85 °C
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USHIO HL6501MG 658nm 35mW AlGaInP Laser Diode
The Optoelectronics Company Ltd
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USHIO HL6501MG 658nm 35mW AlGaInP Laser Diode
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The HL6501MG is a high-performance AlGaInP laser diode designed to deliver exceptional visible light output at a typical wavelength of 658 nm. This laser diode is engineered to provide a stable and reliable optical output power of 30mW in continuous wave (CW) mode, making it an ideal choice for applications requiring precise and ...

Specifications
Center Wavelength: 0.658 um
Output Power: 35 mW
Operating Temperature: -10 ~ +60 °C
Storage Temperature: -40 ~ +85 °C
Threshold Current: 30-70 mA
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USHIO HL63193MG 638nm 700mW AlGaInP Laser Diode
The Optoelectronics Company Ltd
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USHIO HL63193MG 638nm 700mW AlGaInP Laser Diode
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The HL63193MG is a high-performance laser diode designed to deliver exceptional visible light output at a typical wavelength of 638nm. This laser diode is engineered with advanced AlGaInP technology, ensuring robust and reliable performance. With an impressive optical output power of 700mW in continuous wave (CW) mode, the HL63193MG ...

Specifications
Center Wavelength: 0.638 um
Output Power: 700 mW
Small Package: φ 5.6 mm
Optical Output Power (1): 700 mW
Operating Temperature: -10 ~ +40 °C
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USHIO HL40085G 405nm 1000mW Laser Diode
The Optoelectronics Company Ltd
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USHIO HL40085G 405nm 1000mW Laser Diode
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The HL40085G is a high-performance violet laser diode designed to deliver exceptional optical output power of 1,000mW at a typical wavelength of 405nm. This laser diode is engineered for precision and efficiency, making it an ideal choice for applications requiring high-intensity violet light. Its robust design ensures reliable ...

Specifications
Center Wavelength: 0.405 um
Output Power: 1000 mW
Operating Voltage: 5.0 V
Package: 9.0mm
Optical Output Power (Max): 1,100 mW
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USHIO HL8337MG/HL8338MG 830nm 50mW GaAlAs Laser Diode
The Optoelectronics Company Ltd
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USHIO HL8337MG/HL8338MG 830nm 50mW GaAlAs Laser Diode
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The HL8337MG/38MG is a high-performance GaAlAs laser diode designed to deliver exceptional infrared lasing capabilities. Operating at a typical wavelength of 830nm, this laser diode is engineered to provide a consistent optical output power of 50mW. Its robust construction allows it to function efficiently within a wide temperature ...

Specifications
Center Wavelength: 0.83 um
Output Power: 50 mW
Operation Temperature: -10~+60°C
Operating Voltage: 2.4V Max.
Package: φ5.6mm
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USHIO HL40071MG 405nm 300mW Violet Laser Diode
The Optoelectronics Company Ltd
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USHIO HL40071MG 405nm 300mW Violet Laser Diode
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Introducing the HL40071MG, a cutting-edge violet laser diode designed to deliver exceptional performance and reliability. This laser diode operates at a wavelength of 405nm, providing a vibrant violet light that is ideal for a variety of precision applications. With an optical output power of 300mW, the HL40071MG ensures powerful ...

Specifications
Center Wavelength: 0.405 um
Output Power: 300 mW
Operation Temperature: -0~+70°C
Package: 5.6mm
Optical Output Power (Max): 360mW
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PLT5 520B Green Laser Diode in TO56 Package
The Optoelectronics Company Ltd
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PLT5 520B Green Laser Diode in TO56 Package
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The PLT5 520B is a cutting-edge green laser diode housed in a robust TO56 package, designed to deliver exceptional performance for a variety of applications. This laser diode is engineered to provide a continuous optical output power of 80 mW, making it a reliable choice for precision tasks. With a typical emission wavelength of 520 ...

Specifications
Center Wavelength: 0.52 um
Output Power: 80 mW
Operating Temperature Range: -20 °C to 60 °C
Storage Temperature Range: -40 °C to 85 °C
Junction Temperature Max: 120 °C
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PLT5 450B Blue Laser Diode in TO56 Package
The Optoelectronics Company Ltd
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PLT5 450B Blue Laser Diode in TO56 Package
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The PLT5 450B is a cutting-edge blue laser diode housed in a robust TO56 metal can package. This advanced component is designed to deliver exceptional performance with a continuous optical output power of 80 mW, making it a reliable choice for various high-precision applications. Its typical emission wavelength of 450 nm ensures it ...

Specifications
Center Wavelength: 0.45 um
Output Power: 80 mW
Operating Temperature Range: -40 °C to 70 °C
Storage Temperature Range: -40 °C to 85 °C
Junction Temperature Max: 150 °C
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LDX-2710-665: 665nm 750mW Multimode Laser Diode
RPMC Lasers, Inc.
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LDX-2710-665: 665nm 750mW Multimode Laser Diode
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This 665nm red diode laser produces 750mW from a 100um emitter in the free space packages or 600mW from the fiber in the fiber coupled packages. It has a low threshold current and high slope efficiency, which results in a low operating current which enhances reliability.

Specifications
Center Wavelength: 0.665 um
Output Power: 750 mW
Emitter Size: 100 um
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LDX-3105-1210: 1210nm 1500mW Multimode Laser Diode
RPMC Lasers, Inc.
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LDX-3105-1210: 1210nm 1500mW Multimode Laser Diode
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This 1210nm red diode laser produces 1500mW from a 50um emitter in the free space packages or 1200mW from the fiber in the fiber coupled packages. It has a low threshold current and high slope efficiency, which results in a low operating current which enhances reliability.

Specifications
Center Wavelength: 1.21 um
Output Power: 1500 mW
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LDX-2615-635: 635nm 600mW Multimode Laser Diode
RPMC Lasers, Inc.
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LDX-2615-635: 635nm 600mW Multimode Laser Diode
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This 635nm red diode laser produces 600mW from a 150um emitter in the free space packages or 480mW from the fiber in the fiber coupled packages. It has a low threshold current and high slope efficiency, which results in a low operating current which enhances reliability.

Specifications
Center Wavelength: 0.635 um
Output Power: 600 mW
Emitter Size: 150 um
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LDX-4419-1064: Laser Diode Bar Package
RPMC Lasers, Inc.
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LDX-4419-1064: Laser Diode Bar Package
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High-power diode laser bars for the most demanding applications. They are extremely reliable, efficient, and durable. This high power laser diode bar is available on the standard CS package. Other package options are available upon request. Our semiconductor products are easily assembled using standard soldering methods. The material ...

Specifications
Center Wavelength: 1.064 um
Output Power: 40000 mW
Operating Current: 30000 mA
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LDX-4424-1064: Laser Diode Bar Package
RPMC Lasers, Inc.
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LDX-4424-1064: Laser Diode Bar Package
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High-power diode laser bars for the most demanding applications. They are extremely reliable, efficient, and durable. This high power laser diode bar is available on the standard CS package. Other package options are available upon request. Our semiconductor products are easily assembled using standard soldering methods. The material ...

Specifications
Center Wavelength: 1.064 um
Output Power: 40 mW
Operating Current: 30000 mA
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LDX-2803-1550: 1550nm 650mW Multimode Laser Diode
RPMC Lasers, Inc.
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LDX-2803-1550: 1550nm 650mW Multimode Laser Diode
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These high power laser diodes feature a low threshold current and high slope efficiency resulting in a low operating current enhancing reliability. Available in standard package types and custom packages if needed. Suitable for various opto-electronic applications.

Specifications
Center Wavelength: 1.55 um
Output Power: 650 mW
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828 Single-Frequency DBR Laser Diode
Photodigm Inc.
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828 Single-Frequency DBR Laser Diode
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The 828 nm DBR Laser Diode from Photodigm is a high-performance, single-frequency laser designed for precision applications such as LIDAR and water vapor sensing. Based on advanced Gallium Arsenide (GaAs) monolithic technology, this distributed Bragg reflector (DBR) laser provides a single spatial mode beam with excellent spectral ...

Specifications
Center Wavelength: 0.828 um
Output Power: 80 mW
Laser Forward Voltage: 2 V
Operating Current, Max (CW & Pulsed): 250 mA
Optical Power At Max Operating Current: 180 mW
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