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Page 2 - CW Semiconductor Lasers

1036 Single-Frequency DBR Laser Diode
Photodigm Inc.
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1036 Single-Frequency DBR Laser Diode
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The Photodigm 1036 nm Distributed Bragg Reflector (DBR) Laser Diode is a high-performance, single-frequency laser designed for precision optical applications. Built on Gallium Arsenide (GaAs) technology, this edge-emitting laser diode provides a single spatial mode beam with high spectral purity and stability. With passivated facets ...

Specifications
Center Wavelength: 1.036 um
Output Power: 40 mW
Operating Current, Max (CW & Pulsed): 300 mA
Optical Power At Max Operating Current:: 180 mW
Storage Temperature: 0 to +70 °C
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935 Single-Frequency DBR Laser Diode
Photodigm Inc.
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935 Single-Frequency DBR Laser Diode
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The 935 nm DBR Laser Diode is a high-performance edge-emitting laser diode based on monolithic single-frequency Gallium Arsenide (GaAs) technology. It offers a single spatial mode beam and is designed for high precision applications, including ytterbium-based (Yb) atomic spectroscopy. The device features passivated facets, ensuring ...

Specifications
Center Wavelength: 0.935 um
Output Power: 80 mW
Operating Current, Max (CW & Pulsed): 350 mA
Optical Power At Max Operating Current: 240 mW
Storage Temperature: 0 to +70 °C
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1083.33 Single-Frequency DBR Laser Diode
Photodigm Inc.
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1083.33 Single-Frequency DBR Laser Diode
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The 1083.33 nm DBR Laser Diode is a high-performance, single-frequency laser based on advanced Gallium Arsenide (GaAs) monolithic technology. Designed for atomic spectroscopy applications, it provides a stable single-spatial-mode beam with passivated facets for enhanced reliability. This laser is particularly suited for metastable ...

Specifications
Center Wavelength: 1.083 um
Output Power: 100 mW
Operating Current, Max (CW & Pulsed): 550 mA
Optical Power At Max Operating Current: 350 mW
Storage Temperature: 0 to +70 °C
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760 Single-Frequency DBR Laser Diode
Photodigm Inc.
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760 Single-Frequency DBR Laser Diode
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The 760 nm DBR Series of high-performance edge-emitting laser diodes are based on Photodigm’s advanced monolithic single-frequency Gallium Arsenide (GaAs) based laser technology. It provides a single spatial mode beam and has passivated facets for reliability. The 760 nm Series DBR devices are used in O2 sensing, LiDAR, and ...

Specifications
Center Wavelength: 0.76 um
Output Power: 40 mW
Operating Current, Max (CW & Pulsed): 150 mA
Optical Power At Max Operating Current: 60 mW
Storage Temperature: 0 to +70 °C
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1310nm DFB/SLED Butterfly Device
Shanghai Aoshi Control Technology Co.Ltd
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1310nm DFB/SLED Butterfly Device
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The SLEDButterflyDevice SGSLD-1310-XX-XXX-XX-X is a cutting-edge solution designed to enhance optical performance in various technological applications. Engineered with precision, this device is housed in a robust metal-coupled and hermetic package, ensuring durability and reliability in diverse environments. The inclusion of ...

Specifications
Center Wavelength: 1.31 um
Output Power: 3 mW
Forward Voltage: 1.2 V
Center Wavelength: 1290 - 1330 nm
Bandwidth FWHM: 30 - 40 nm
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850nm DFB/SLED Butterfly Device
Shanghai Aoshi Control Technology Co.Ltd
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850nm DFB/SLED Butterfly Device
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The SG FusionChip SLED Butterfly Device, model SGSLD-850-XX-XX-XX-X, stands as a testament to advanced optical technology, offering a compact yet powerful solution for a variety of optical applications. This device is engineered with precision, housed in a miniaturized hermetic package that ensures durability and reliability. Its ...

Specifications
Center Wavelength: 0.85 um
Output Power: 12 mW
Forward Voltage: 1.9 V
Center Wavelength: 830 - 870 nm
Bandwidth FWHM: 15 - 19 nm
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1310/1550nm DFB/SLED Butterfly Device
Shanghai Aoshi Control Technology Co.Ltd
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1310/1550nm DFB/SLED Butterfly Device
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The SLED Butterfly Device, model SGSLD-1XX0-XX-XX-XX-14, is a cutting-edge product. This device is meticulously designed to deliver exceptional performance in various optical applications. It features a robust construction that ensures reliability and longevity, making it an ideal choice for professionals seeking high-quality optical ...

Specifications
Center Wavelength: 1.55 um
Output Power: 10 mW
Forward Voltage: 2.5 V
Center Wavelength: 1290 - 1575 nm
Bandwidth: 30 - 50 nm
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1310 - 1742nm Narrow Linewidth DFB Butterfly Laser
Shanghai Aoshi Control Technology Co.Ltd
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1310 - 1742nm Narrow Linewidth DFB Butterfly Laser
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SG FusionChip Technology Co., Ltd presents the Narrow Line width DFB Butterfly Device, model SGNLD-xxxx-xx-xx-xx-14-xx-x. This high-quality Multi-Quantum Well (MQW) Distributed Feedback (DFB) laser diode is designed to meet the demanding requirements of high-power optical transmitter systems. Encased in a robust butterfly package, ...

Specifications
Center Wavelength: 1550 um
Output Power: 100 mW
Threshold Current: 55 mA
Operating Current: 700 mA
Center Wavelength: λc nm
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Customized Laser Module (405nm | 50mW)
LECC Technology Co., Ltd.
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Customized Laser Module (405nm | 50mW)
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Our laser modules are tailored to your unique needs, offering a versatile spectrum of wavelengths from vivid red, green, and blue to even invisible light. Catering to a vast array of applications - be it ranging, positioning, PM2.5 detection, or 3D printing - we've got a product that fits your requirements. At LECC, we don't just ...

Specifications
Center Wavelength: 0.405 um
Output Power: 50 mW
CW Optical Power: 50 mW
Operating Current: 200 mA
Operating Voltage: 5 V
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M6 | EEL Laser Module (658nm | 3~4mW)-AD65040004
LECC Technology Co., Ltd.
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M6 | EEL Laser Module (658nm | 3~4mW)-AD65040004
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The EEL series from Dishen Electronics introduces a state-of-the-art diode laser module with a diameter of just 6mm. Standing out as the most compact in our standard public version modules, this semiconductor laser uniquely combines precision and miniaturization. Primarily designed for applications like signal processing, sensing, ...

Specifications
Center Wavelength: 0.658 um
Output Power: 3 mW
CW Optical Power: 3 mW
Operating Current: 45 mA
Operating Voltage: 3.3 V
Data Sheet
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