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Page 2 - CW Semiconductor Lasers

UV Laser Diode in with 300mW in a TO18 (5.6mm) package.  The FWSL‑395‑300‑TO18‑MM is a high‑power UV laser diode from Frankfurt Laser Company. It is built around a 5.6 mm TO‑18 metal can package with a multimode laser diode inside and is optimized for continuous‑wave (CW) operation at 395 nm. The device produces around 300 mW ...

Specifications

Center Wavelength: 0.395 um
Output Power: 300 mW
Ziguan Photonics' 980nm single-wavelength laser adopts a butterfly semiconductor laser chip with FBG frequency locking. The drive circuit and TEC control ensure the safe operation of the laser and the output power and spectrum stability. Suitable as a pumped laser source for fiber lasers or EDFA fiber amplifiers, it can provide ...

Specifications

Center Wavelength: 0.976 um
Output Power: 1000 mW
Output Power: 200-1000 mW
Fiber Type: Hi1060 or PM980
Power Suply: AC220V or DC 5V
Discover the groundbreaking Stretto laser system, akey member of the PureLight family, offering advanced,high- performance, narrow-linewidth photonic solutions inultraviolet (UV), Visible, and Near-Infrared (NIR). Drawinginspiration from the musical term ‘stretto,’ which signifiesthe intricate overlap and succession of ...

Specifications

Center Wavelength: Not Specified
Output Power: Not Specified
Wavelength Coverage: 369 - 1800 nm
Typical Power Range: 10 – 300 mW
Typical Mode-hop Free Tuning Range: ≥ 50 GHz
Ortel’s 1790 laser module is characterized for use as a CW coherent optical sourceDFB laser operated in the 1550 nm wavelength band for LiDAR technology. Ortel’sdesign provides a compact, robust solution for Frequency Modulation ContinuousWavelength (FMCW) sensing for autonomous vehicles and wide variety of otheroptical ...

Specifications

Center Wavelength: 1.55 um
Output Power: 63 mW
Wavelength (can Be Chosen From ITU Grid): 1550 ± 10 nm
Operating Current: 500 mA
Frequency Noise @ 100 KHz MAX: 32 kHz²/Hz
The FLPD-2332-03-DFB-BTF laser diode is a cost effective, highly coherent laser source. The DFB laser diode chip is packaged in an industry standard hermetically sealed 14 pin butterfly package with TEC, thermistor and PD.

Specifications

Center Wavelength: 2.332 um
Output Power: 3 mW
Linewidth: <2 MHz
FLX-1620-1000M-150 is a multimode semi-conductor laser diode with 1000mW CW output power at 1620nm Available packages are B-Mount, C-Mount, TO-3 can and HHL. It is suitable for the use in various opto-electronic applications.

Specifications

Center Wavelength: 1.62 um
Output Power: 1000 mW
The high power laser diodes contain an optimized GaAs substrate. They are available with various single mode pigtails - PM fibers are an option.  Depending on the product and the wavelength the maximum cw power is 500 mW. All these fiber-pigtailed laser diodes are housed in a cooled 14-pin package. As additional option they have ...

Specifications

Center Wavelength: 0.76 um
Output Power: 200 mW
The multi mode laser diodes are used in applications in material processing, illumination, and medicine. As hermetically sealed single emitter they have an ultra long lifetime and are burn-in tested. The easy-to-mount products have a robust design. All broad area single emitters from LUMICS have a ± 10 nm wavelengths ...

Specifications

Center Wavelength: 0.975 um
Output Power: 9000 mW
Micro source photon series narrow line width semiconductor laser module, with ultra-narrow line width, ultra-low RIN noise, excellent frequency stability and reliability, is widely used in optical fiber sensing and detection systems (DTS, DVS, DAS, etc.)

Specifications

Center Wavelength: 1530 um
Output Power: 30 mW
We are pleased to introduce our 5W 793nm Chip-on-Submount (COS) laser diode, a compact, high-performance solution designed for precision applications such as fiber laser pumping, solid-state laser systems, and medical equipment. If you are currently working on systems requiring compact, high-power pump lasers, this 793nm COS diode ...

Specifications

Center Wavelength: 0.793 um
Output Power: 5000 mW
The ORION™ devices are compact laser modules employing the RIO high-performance External Cavity Laser (ECL). This laser design is based on RIO’s proprietary planar technology (PLANEX™) and consists of a gain chip and a planar lightwave circuit including waveguides with Bragg gratings, forming a laser cavity with significant ...

Specifications

Center Wavelength: 1.064 um
Output Power: 20 mW
Power Stability Over Case Temperature Range (5 To +50 ºC): +/- 20 %
Wavelength Tuning Range:: 20 pm
Wavelength Stability Over Case Temperature Range (5 To +50 ºC): ±50 pm
The LECC AD65040009 SMD Laser Module redefines miniaturization in laser technology, offering the industry's smallest laser module with a compact 2.5×2.65×6.15 mm package. Utilizing advanced Edge Emitting Laser (EEL) technology and a high-temperature-resistant aspherical glass lens, this module delivers superior optical ...

Specifications

Center Wavelength: 0.65 um
Output Power: 4 mW
CW Optical Power: 2.5 mW
Operating Current: 17 mA
Operating Voltage: 2.2 V
We supply 720W 808nm Horizontal Stack Diode Laser. With G-Stack, it has long lifetime and high reliability, stability. We specialized in Diode Laser for many years, covering most Europe and America market. Quality is our principle, we pay great attention to the quality of our products,  we focus on diode laser customizing.

Specifications

Center Wavelength: 0.808 um
Output Power: 720000 mW
TO mount wavelengths included:405nm, 445nm,450nm, 520nm, 635nm, 638nm, 640nm, 650nm, 660nm, 780nm,785nm, 795nm, 808nm, 810nm, 830nm, 850nm, 860nm, 905nm, 940nm, 980nm,1050nm, 1060nm, 1064nm, 1300nm, 1310nm, 1550nm, 1653nm, 2004nm, 2327nm,etc. Other wavelengths can also be customized, welcome to inquiry.

Specifications

Center Wavelength: 0.66 um
Output Power: 2000 mW
Wavelength stabilized diode provides narrow linewidth and very small wavelength drift against current and temperature. This 808nm laser diode comes in a 14-pin hermetically sealed butterfly package with built-in TEC, thermistor and photodiode. It emits max. 3.5W CW from a 105µm core and 0.22NA fiber. The wavelength starts to be ...

Specifications

Center Wavelength: 0.808 um
Output Power: 3500 mW
Wavelength Tolerance: +/- 1.0 nm
Spectral Linewidth (FWHM): 1.0 nm
Fiber Core Diameter: 105 µm
OL(S) Series Microchannel Cooling Housed Vertical Diode Stacks The OL(S) Series by Oriental-laser (Beijing) Co., Ltd is a revolutionary advancement in diode stack technology, offering unparalleled performance and reliability. These diode stacks are engineered with cutting-edge microchannel cooling technology, ensuring optimal thermal ...

Specifications

Center Wavelength: 0.808 um
Output Power: 40000 mW
Operation Mode: CW
Power Per Sub-mounts: 40 W
Central Wavelength³ At 25℃: 808 ±3 nm
Introducing the Narrow Linewidth Laser Module, P/N RZ-13-C34-10-FA-1-3kHz, designed for high precision applications in various fields such as distributed optical fiber sensing, optical fiber hydrophones, LIDAR, and scientific research. Our laser module features an external cavity semiconductor structure that offers narrow line-width, ...

Specifications

Center Wavelength: 1.55 um
Output Power: 16 mW
Power Stability: -0.5 to 0.5 dB
Optical Signal To Noise Ration (SNR): 60 dB
Polarization Extinction Ratio: 60 dB
The RZNLD-1550-10-BP-00-14-06-01 is a high-performance MQW DFB laser diode housed in a butterfly package designed for optical transmitter systems that require high power and stability. Featuring a built-in thermoelectric cooler (TEC) and thermistor, the device ensures stable operation across varying environmental conditions, with an ...

Specifications

Center Wavelength: 1.31 um
Output Power: 50 mW
Operating Case Temperature: -20 - +70 degC
Storage Temperature: -40 - +85 degC
Reverse Voltage: 2 V