FILTER PRODUCTS

to
to

FILTER PRODUCTS

to
to

Page 5 - CW Semiconductor Lasers

The 1064 nm DBR Laser Diode is a high-performance, edge-emitting laser designed using Photodigm’s advanced Gallium Arsenide (GaAs) technology. It delivers a single-frequency, single-spatial-mode output, making it an excellent choice for applications requiring precise wavelength stability and low-noise performance. Featuring ...

Specifications

Center Wavelength: 1.06 um
Output Power: 100 mW
Operating Current, Max (CW & Pulsed): 550 mA
Optical Power At Max Operating Current: 350 mW
Storage Temperature: 0 to +70 °C
The 1080 nm Distributed Bragg Reflector (DBR) Laser Diode is a high-performance, edge-emitting laser designed for precision applications requiring single-frequency, low-noise operation. Utilizing Photodigm's advanced monolithic Gallium Arsenide (GaAs) technology, this laser provides exceptional beam quality with a single spatial mode ...

Specifications

Center Wavelength: 1.08 um
Output Power: 40 mW
Operating Current, Max (CW & Pulsed): 250 mA
Optical Power At Max Operating Current: 180 mW
Storage Temperature: 0 to +70 °C
The 1090 nm DBR Laser Diode is a high-performance, single-frequency laser designed for atomic spectroscopy, particularly for strontium-based (Sr) applications. Utilizing Photodigm’s advanced monolithic Gallium Arsenide (GaAs) technology, this Distributed Bragg Reflector (DBR) laser delivers a stable, single spatial mode beam ...

Specifications

Center Wavelength: 1.09 um
Output Power: 40 mW
Operating Current, Max (CW & Pulsed): 250 mA
Optical Power At Max Operating Current: 180 mW
Storage Temperature: 0 to +70 °C
Discover the unparalleled performance of our 650nm diode laser module, EEL M12. Renowned for its superior heat dissipation, this module is powered by an advanced APC circuit ensuring a consistently stable optical power output. With a sturdy structure crafted from a high-quality aluminum anode finish, this laser module not only boasts ...

Specifications

Center Wavelength: 0.658 um
Output Power: 25 mW
CW Optical Power: 25 mW
Operating Current: 140 mA
Operating Voltage: 5 V
The EEL M6.5 is a premier 650nm diode laser module known for its unmatched optical quality and clarity. Designed for precision, this module guarantees high stability and delivers a consistently robust optical output power, making it a leader in the 650nm category. One of its standout features is its remarkable shock resistance ...

Specifications

Center Wavelength: 0.637 um
Output Power: 12 mW
CW Optical Power: 12 mW
Operating Current: 44 mA
Operating Voltage: 2.2 V
Discover the unparalleled performance of our 650nm diode laser module, EEL M12. Renowned for its superior heat dissipation, this module is powered by an advanced APC circuit ensuring a consistently stable optical power output. With a sturdy structure crafted from a high-quality aluminum anode finish, this laser module not only boasts ...

Specifications

Center Wavelength: 0.655 um
Output Power: 0.4 mW
CW Optical Power: 0.7 mW
Operating Current: 100 mA
Operating Voltage: 5 5
The EEL series from Dishen Electronics introduces a state-of-the-art diode laser module with a diameter of just 6mm. Standing out as the most compact in our standard public version modules, this semiconductor laser uniquely combines precision and miniaturization. Primarily designed for applications like signal processing, sensing, ...

Specifications

Center Wavelength: 0.655 um
Output Power: 2 mW
CW Optical Power: 2~4 mW
Operating Current: 40 mA
Operating Voltage: 2.3 V
This 635nm diode laser produces 1200mW from a 300um emitter in the free space packages or 960mW from the fiber in the fiber coupled packages. It has a low threshold current and high slope efficiency, which results in a low operating current which enhances reliability.

Specifications

Center Wavelength: 0.635 um
Output Power: 1200 mW
Emitter Size: 300 um
This 750nm diode laser produces 2000mW from a 100um emitter in the free space packages or 1600mW from the fiber in the fiber coupled packages. It has a low threshold current and high slope efficiency, which results in a low operating current which enhances reliability.

Specifications

Center Wavelength: 0.75 um
Output Power: 2000 mW
Emitter Size: 100 um
This 650nm diode laser produces 1000mW from a 150um emitter in the free space packages or 800mW from the fiber in the fiber coupled packages. It has a low threshold current and high slope efficiency, which results in a low operating current which enhances reliability.

Specifications

Center Wavelength: 0.65 um
Output Power: 1000 mW
Emitter Size: 150 um