C156: High Power Single-mode Laser Diode 1940nm C-Mount

Specifications

Center Wavelength: 1.94 um
Output Power: 1100 mW
Chip Cavity Length: 1500 μm
Emitter Width: 150 μm
Emitter Height: 1 μm
Spectral Width: 10 nm 3dB
Slope Efficiency: 0.30 W/A
Fast Axis Divergence FWHM: 30 deg
Slow Axis Divergence FWHM: 11 deg
Power Conversion Eff.: 17 %
Threshold Current: 0.35 A
Operating Current: 4 A
Operating Voltage: 1.3 V
Weight: 0.5 g
Operating Temperature: -40 to +80 °C
Storage Temperature: -40 to +80 °C
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Features

  • Cost-effective
  • High Output Power
  • High Dynamic Range
  • High Efficiency
  • Standard Low Cost Package

Applications

  • OEM Medical
  • DPSS pump source
  • LiDAR
  • Military / Aerospace