C156 C-Mount High Power Single-mode Laser Diode 1940nm

Specifications

Center Wavelength: 1.94 um
Output Power: 1100 mW
Chip Cavity Length: 1500 μm
Emitter Width: 150 μm
Emitter Height: 1 μm
Spectral Width: 10 nm 3dB
Slope Efficiency: 0.30 W/A
Fast Axis Divergence FWHM: 30 deg
Slow Axis Divergence FWHM: 11 deg
Power Conversion Eff.: 17 %
Threshold Current: 0.35 A
Operating Current: 4 A
Operating Voltage: 1.3 V
Weight: 0.5 g
Operating Temperature: -40 to +80 °C
Storage Temperature: -40 to +80 °C
Document icon Download Data Sheet Download icon

Features


  • Cost-effective

  • High Output Power

  • High Dynamic Range

  • High Efficiency

  • Standard Low Cost Package

Applications


  • OEM Medical

  • DPSS pump source

  • LiDAR

  • Military / Aerospace