TO9-105: High Power Single-Mode and Multi-Mode Laser Diode

Specifications

Center Wavelength: 1.565 um
Output Power: 400 mW
Chip Cavity Length: 2500 μm
Emitter Width: 4 μm
Emitter Height: 1 μm
Spectral Width: 10 nm 3dB
Slope Efficiency: 0.30 W/A
Fast Axis Divergence FWHM: 30 deg
Slow Axis Divergence FWHM: 10 deg
Power Conversion Eff.: 10 %
Operating Current: 1.2 A
Threshold Current: 0.05 A
Operating Voltage: 2.5 V
Weight: 1.5 g
Operating Temperature: -40 to +60 °C
Storage Temperature: -40 to +80 °C
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Features

  • Cost effective 
  • High Output Power 
  • High Dynamic Range 
  • High Efficiency 
  • Standard Low-Cost Package

Applications

  •  OEM Medical
  • Professional Medical 
  • LiDAR 
  • Military / Aerospace 
  • Illumination