C106 C-Mount High Power Single-mode Laser Diode 1480nm

Specifications

Center Wavelength: 1.48 um
Output Power: 5000 mW
Chip Cavity Length: 2500 μm
Emitter Width: 95 µm
Emitter Height: 1 μm
Slope Efficiency η°: 0.40 W/A
Fast Axis Divergence FWHM: 28 deg
Slow Axis Divergence FWHM: 9 deg
Power Conversion Eff.: 21 %
Threshold Curren: 0.45 A
Operating Current: 14 A
Operating Voltage: 1.7 V
Weight: 1.3 g
Operating Temperature: -40 to +60 ℃
Storage Temperature: -40 to +80 °C
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Features


  • Cost-effective

  • High Output Power

  • High Dynamic Range

  • High Efficiency

  • Standard Low-Cost Package

Applications


  • OEM Medical

  • DPSS pump source

  • LiDAR

  • Military / Aerospace