C106: High Power Single-mode Laser Diode 1480nm C-Mount

Specifications

Center Wavelength: 1.48 um
Output Power: 5000 mW
Chip Cavity Length: 2500 μm
Emitter Width: 95 µm
Emitter Height: 1 μm
Slope Efficiency η°: 0.40 W/A
Fast Axis Divergence FWHM: 28 deg
Slow Axis Divergence FWHM: 9 deg
Power Conversion Eff.: 21 %
Threshold Curren: 0.45 A
Operating Current: 14 A
Operating Voltage: 1.7 V
Weight: 1.3 g
Operating Temperature: -40 to +60 ℃
Storage Temperature: -40 to +80 °C
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Features

  • Cost-effective
  • High Output Power
  • High Dynamic Range
  • High Efficiency
  • Standard Low-Cost Package

Applications

  • OEM Medical
  • DPSS pump source
  • LiDAR
  • Military / Aerospace