REP1953-DM-B: Stabilized Narrow-Linewidth Laser Diode 1950-2150nm

Specifications

Center Wavelength: 1.953 um
Output Power: 1.25 mW
Forward Current: 80 - 120 mA
Forward Voltage: 1.3 - 1.6 V
TEC Current: 0.5 - 1.0 A
Reverse Voltage LD: 2.0 V
Case Temperature: -20 - 65 °C
Chip Submount Temperature: 0 - 50 °C
Storage Temperature: -40 - 85 °C
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Features

  • Integral TEC
  • PM/SMF Coupled with FC/APC
  • Built-in Optical Isolator

Applications

  • Telecommunications: Ideal for fiber optic communication systems requiring precise wavelength control.
  • Spectroscopy: Suitable for high-resolution spectroscopic applications due to its stable wavelength output.
  • Metrology: Used in precision measurement systems where accurate and stable laser sources are essential.
  • Research and Development: Beneficial for R&D environments that require tunable laser sources for various experimental setups.
  • Medical Diagnostics: Applicable in medical equipment that utilizes laser technology for diagnostic purposes.
  • Industrial Applications: Employed in industrial settings for tasks such as material processing and quality control.