10G 1577nm DFB Laser Diode TO-56 with TEC

Specifications

Center Wavelength: 1.577 um
Output Power: 8 mW
Resistance Value (Thermistor): 10 KΩ
Focus Length: 11.6-12.6 mm
Monitor Dark Current: 100 nA
Monitor PD Current: 100-1000 μA
Resistance: 8-10 Ω
Spectral Width: 0.1 nm
Side Mode Suppression Ratio: 35 dB
Center Wavelength: 1575-1580 nm
Slope Efficiency: 0.25 mW/mA
Operating Current: 80 mA
Forward Voltage: 1.1-1.6 V
Output Optical Power: 8 mW
Threshold Current: 8-15 mA
PD Forward Current: 2 mA
PD Reverse Bias Voltage: 20 V
TEC Voltage: 2.4 V
TEC Current: 0.94 A
Laser Forward Current: 120 mA
Laser Reverse Voltage: 2 V
Operation Temperature Max: 85 ℃
Operation Temperature Min: -10 ℃
Storage Temperature Max: 85 ℃
Storage Temperature Min: -40 ℃
Aspheric Lens Diameter: 12.1 mm
Package Type: TO56
Data Rate: 10.3125 Gbps
Typical Emission Wavelength: 1577 nm
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Features

  • 1577 nm Typical Emission Wavelength: Ensures precise and reliable laser performance.
  • Data Rate Up to 10.3125 Gbps: Supports high-speed data transmission for advanced applications.
  • TO-56 Package with TEC and 12.1 mm Aspheric Lens: Provides efficient thermal management and focused optical output.
  • ROHS Compliant: Environmentally friendly and adheres to international safety standards.
  • Compliant with Telcordia GR-468: Meets rigorous reliability and quality standards for telecommunications.

Description: The product is a directly modulated 10 Gbps 1577 nm DFB laser diode device in a hermetic TO-56 package. It is available with an aspheric lens cap, NTC, and co-packaged InGaAs monitoring photodiode.

Applications

  • 10G EPON OLT
  • XG COMBO OLT