Description
Overview of the 10G 1577nm DFB Laser Diode TO-56
The 10G 1577nm DFB Laser Diode TO-56 is a state-of-the-art, directly modulated laser diode designed for high-speed data transmission. Encased in a hermetic TO-56 package, this laser diode is engineered to deliver exceptional performance with a typical emission wavelength of 1577nm. Its robust design includes an aspheric lens cap, NTC, and a co-packaged InGaAs monitoring photodiode, ensuring precise and reliable operation.
This laser diode is built to meet the rigorous standards of ROHS compliance and Telcordia GR-468, making it a reliable choice for various demanding applications. The product's design focuses on durability and efficiency, allowing it to operate effectively across a wide temperature range. With a data rate capability of up to 10.3125 Gbps, it is an ideal component for high-speed optical networks, ensuring seamless data transmission and connectivity.
Design and Reliability
The mechanical design of the 10G 1577nm DFB Laser Diode TO-56 is crafted to ensure optimal performance and longevity. The device is sensitive to electro-static damage, and therefore, it is packaged with antistatic material for safe transportation. The working environment for this laser diode should be carefully controlled to prevent electrostatic discharge (ESD) and electrical overstress (EOS), which can damage the semiconductor chips. Proper grounding and humidity control are essential to maintain the integrity and functionality of the device. In summary, the 10G 1577nm DFB Laser Diode TO-56 is a high-performance, reliable component designed for advanced optical communication systems. Its robust construction and compliance with industry standards make it a preferred choice for professionals seeking efficiency and precision in their optical networks.
10G 1577nm DFB Laser Diode TO-56 with TEC
Specifications
| Center Wavelength: | 1.577 um |
|---|---|
| Output Power: | 8 mW |
| Resistance Value (Thermistor): | 10 KΩ |
| Focus Length: | 11.6-12.6 mm |
| Monitor Dark Current: | 100 nA |
| Monitor PD Current: | 100-1000 μA |
| Resistance: | 8-10 Ω |
| Spectral Width: | 0.1 nm |
| Side Mode Suppression Ratio: | 35 dB |
| Center Wavelength: | 1575-1580 nm |
| Slope Efficiency: | 0.25 mW/mA |
| Operating Current: | 80 mA |
| Forward Voltage: | 1.1-1.6 V |
| Output Optical Power: | 8 mW |
| Threshold Current: | 8-15 mA |
| PD Forward Current: | 2 mA |
| PD Reverse Bias Voltage: | 20 V |
| TEC Voltage: | 2.4 V |
| TEC Current: | 0.94 A |
| Laser Forward Current: | 120 mA |
| Laser Reverse Voltage: | 2 V |
| Operation Temperature Max: | 85 ℃ |
| Operation Temperature Min: | -10 ℃ |
| Storage Temperature Max: | 85 ℃ |
| Storage Temperature Min: | -40 ℃ |
| Aspheric Lens Diameter: | 12.1 mm |
| Package Type: | TO56 |
| Data Rate: | 10.3125 Gbps |
| Typical Emission Wavelength: | 1577 nm |
Features
- 1577 nm Typical Emission Wavelength: Ensures precise and reliable laser performance.
- Data Rate Up to 10.3125 Gbps: Supports high-speed data transmission for advanced applications.
- TO-56 Package with TEC and 12.1 mm Aspheric Lens: Provides efficient thermal management and focused optical output.
- ROHS Compliant: Environmentally friendly and adheres to international safety standards.
- Compliant with Telcordia GR-468: Meets rigorous reliability and quality standards for telecommunications.
Description: The product is a directly modulated 10 Gbps 1577 nm DFB laser diode device in a hermetic TO-56 package. It is available with an aspheric lens cap, NTC, and co-packaged InGaAs monitoring photodiode.
Applications
- 10G EPON OLT
- XG COMBO OLT
Frequently Asked Questions
What is the typical emission wavelength of the laser diode?
What is the maximum data rate supported by the laser diode?
What package type does the laser diode use?
What are the storage and operating temperature ranges for the laser diode?
What precautions should be taken to prevent electro-static damage?
What is the forward voltage of the laser diode at 25°C?
What is the side mode suppression ratio (SMSR) of the laser diode?
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