REP2004-DM-B: 2004nm Stabilized Narrow-Linewidth Laser Diode 1950-2150nm

Specifications

Center Wavelength: 2.004 um
Output Power: 3 mW
Forward Current: 140 mA
Forward Voltage: 1.6 V
TEC Current: 1.2 A
Reverse Voltage LD: 2 V
Case Temperature: -20 to 65 °C
Chip Submount Temperature: 0 to 50 °C
Storage Temperature: -40 to 85 °C
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Features

  • Integral TEC
  • PM/SMF Coupled with FC/APC
  • Built-in Optical Isolator

Applications

  • Telecommunications: Ideal for use in fiber optic communication systems due to its single-mode operation and compatibility with FC/APC connectors.
  • Sensing Applications: Suitable for various sensing applications that require precise and stable laser sources.
  • Research and Development: Useful in laboratory settings for experiments requiring a reliable laser source with a 14-pin butterfly package.
  • Industrial Applications: Can be integrated into industrial systems that require laser components with specific wavelength bands and packaging options.
  • Medical Equipment: Applicable in medical devices that utilize laser technology for diagnostics or treatment.