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Page 15 - CW Semiconductor Lasers

RIO ORION™ Series 1550nm Low Phase Noise Narrow Linewidth Laser Source (20mW)
RIO (OptaSense, Inc)
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RIO ORION™ Series 1550nm Low Phase Noise Narrow Linewidth Laser Source (20mW)
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The ORION™ laser sources are compact benchtop lasers based on the RIO high-performance External Cavity Laser (ECL). This laser design is based on RIO’s proprietary planar technology (PLANEX™) and consists of a gain chip and a planar lightwave circuit including waveguides with Bragg gratings, forming a lasercavity with significant ...

Specifications
Center Wavelength: 1.55 um
Output Power: 20 mW
Side Mode Suppression Ratio: 40 dB
Optical S/N Ratio: 60 dB
Polarization Extinction Ratio: 20 dB
Data Sheet
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RIO ORION™ Series 1550nm Low Phase Noise Narrow Linewidth Laser Source (10mW)
RIO (OptaSense, Inc)
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RIO ORION™ Series 1550nm Low Phase Noise Narrow Linewidth Laser Source (10mW)
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The ORION™ laser sources are compact benchtop lasers based on the RIO high-performance External Cavity Laser (ECL). This laser design is based on RIO’s proprietary planar technology (PLANEX™) and consists of a gain chip and a planar lightwave circuit including waveguides with Bragg gratings, forming a lasercavity with significant ...

Specifications
Center Wavelength: 1.55 um
Output Power: 10 mW
Power Stability Over Operating Temperature Range: +/- 0.3 %
Wavelength Tuning Range: 30 pm
Relative Intensity Noise: -140 db/Hz
Data Sheet
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RIO GRANDE 1550 nm High Power Low Phase Noise Narrow Linewidth Laser Module (2W)
RIO (OptaSense, Inc)
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RIO GRANDE 1550 nm High Power Low Phase Noise Narrow Linewidth Laser Module (2W)
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The RIO GRANDE devices are high power laser modules employing the RIO high-performance External Cavity Laser (ECL). This laser design is based on RIO’s proprietary planar technology (PLANEX™) and consists of a gain chip and a planar lightwave circuit including waveguides with Bragg gratings, forming a laser cavity with ...

Specifications
Center Wavelength: 1.55 um
Output Power: 2000 mW
Output Power Adjustment Range: %
Wavelength Stability: +/- 10 pm
Relative Intensity Noise (>/= 100Hz): -110 db/Hz
Data Sheet
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RIO GRANDE 1550 nm High Power Low Phase Noise Narrow Linewidth Laser Module (1W)
RIO (OptaSense, Inc)
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RIO GRANDE 1550 nm High Power Low Phase Noise Narrow Linewidth Laser Module (1W)
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The RIO GRANDE devices are high power laser modules employing the RIO high-performance External Cavity Laser (ECL). This laser design is based on RIO’s proprietary planar technology (PLANEX™) and consists of a gain chip and a planar lightwave circuit including waveguides with Bragg gratings, forming a laser cavity with significant ...

Specifications
Center Wavelength: 1.55 um
Output Power: 1000 mW
Output Power Adjustment Range: %
Wavelength Stability: +/- 10 pm
Relative Intensity Noise (>/= 100Hz): -110 dB/Hz
Data Sheet
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RIO GRANDE 1550 nm High Power Low Phase Noise Narrow Linewidth Laser Module (0.2W)
RIO (OptaSense, Inc)
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RIO GRANDE 1550 nm High Power Low Phase Noise Narrow Linewidth Laser Module (0.2W)
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The RIO GRANDE devices are high power laser modules employing the RIO high-performance External Cavity Laser (ECL). This laser design is based on RIO’s proprietary planar technology (PLANEX™) and consists of a gain chip and a planar lightwave circuit including waveguides with Bragg gratings, forming a laser cavity with ...

Specifications
Center Wavelength: 1.55 um
Output Power: 200 mW
Output Power Adjustment Range: %
Wavelength Stability: +/- 10 pm
Relative Intensity Noise (>/= 100Hz): -110 db/Hz
Data Sheet
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RIO COLORADO Widely Tunable 1550nm Narrow Linewidth Laser Source (L-Band)
RIO (OptaSense, Inc)
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RIO COLORADO Widely Tunable 1550nm Narrow Linewidth Laser Source (L-Band)
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The RIO COLORADO laser source is a state-of-the-art, compact benchtop solution that leverages semiconductor external cavity laser technology. Designed to deliver exceptional performance, this laser source offers a wide wavelength tuning range across both the C-band (1530nm-1565nm) and L-band, making it an ideal choice for a variety ...

Specifications
Center Wavelength: 1.55 um
Output Power: 20 mW
Output Power Range: mW
Wavelength Tuning Range (L-Band): nm
Side Mode Suppression Ratio: 55 dB
Data Sheet
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RIO COLORADO Widely Tunable 1550nm Narrow Linewidth Laser Source (C-Band)
RIO (OptaSense, Inc)
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RIO COLORADO Widely Tunable 1550nm Narrow Linewidth Laser Source (C-Band)
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The RIO COLORADO is a state-of-the-art, widely tunable laser source that offers exceptional performance in a compact benchtop design. Leveraging advanced semiconductor external cavity laser technology, this laser source is engineered to provide a stable and reliable platform for a variety of optical applications. Its design ...

Specifications
Center Wavelength: 1.55 um
Output Power: 20 mW
Output Power Range: mW
Side Mode Suppression Ratio: 55 dB
Optical Signal To Noise Ratio: 60 dB
Data Sheet
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RIO PLANEX™ 1064nm Narrow Linewidth External Cavity Laser (20mW)
RIO (OptaSense, Inc)
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RIO PLANEX™ 1064nm Narrow Linewidth External Cavity Laser (20mW)
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The RIO019X-X-XX-X devices are high-performance cost effective External Cavity Laser (ECL). The design is based on RIO’s proprietary planar technology (PLANEX™) and consists of a gain chip and a planar lightwave circuit including waveguides with Bragg gratings, forming a laser cavity with significant advantages. PLANEX™ laser ...

Specifications
Center Wavelength: 1.064 um
Output Power: 20 mW
Threshold Current (typ.): 30 mA
Laser Bias Current: 100 mA
Wavelength Vs. TEC Temperature (Tset +/- 1 ºC): 14 pm/ºC
Data Sheet
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RIO PLANEX™ 1064nm Narrow Linewidth External Cavity Laser (10mW)
RIO (OptaSense, Inc)
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RIO PLANEX™ 1064nm Narrow Linewidth External Cavity Laser (10mW)
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The RIO019X-X-XX-X devices are high-performance cost effective External Cavity Laser (ECL). The design is based on RIO’s proprietary planar technology (PLANEX™) and consists of a gain chip and a planar lightwave circuit including waveguides with Bragg gratings, forming a laser cavity with significant advantages. PLANEX™ laser ...

Specifications
Center Wavelength: 1.064 um
Output Power: 10 mW
Threshold Current: 30 mA
Laser Bias Current: 100 mA
Wavelength Vs. TEC Temperature (Tset +/- 1 ºC): 14 pm/ºC
Data Sheet
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RIO ORION™ Series 1064nm Low Phase Noise Narrow Linewidth Laser Module (10mW)
RIO (OptaSense, Inc)
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RIO ORION™ Series 1064nm Low Phase Noise Narrow Linewidth Laser Module (10mW)
Compare
The ORION™ devices are compact laser modules employing the RIO high-performance External Cavity Laser (ECL). This laser design is based on RIO’s proprietary planar technology (PLANEX™) and consists of a gain chip and a planar lightwave circuit including waveguides with Bragg gratings, forming a laser cavity with significant ...

Specifications
Center Wavelength: 1.064 um
Output Power: 10 mW
Power Stability Over Case Temperature Range (5 To +50 ºC): +20 %
Wavelength Tuning Range: 20 pm
Wavelength Stability Over Case Temperature Range (5 To +50 ºC): ±50 pm
Data Sheet
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Multi-Chip Module
SemiNex Corporation
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Multi-Chip Module
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The SemiNex IR Multimode Multi-Chip Module series offers unparalleled power output at infrared wavelengths between 1300 nm and 1700 nm, supporting applications demanding high optical performance. These modules deliver output powers ranging from 10 W to 50 W, with standard center wavelengths at 1470 nm, 1532 nm, and 1550 nm, while ...

Specifications
Center Wavelength: 1.5 um
Output Power: 20000 mW
Spectral Width: 10 nm
Threshold Current: 0.7 A
Operating Current: 7.5 A
Data Sheet
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High Power Multi-Mode Laser Engine
SemiNex Corporation
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High Power Multi-Mode Laser Engine
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The SemiNex High Power Multi-Mode Laser is engineered to deliver exceptional performance at infrared wavelengths ranging from 13xx to 17xx nm. As a leader in laser technology, SemiNex Corporation specializes in providing the highest available power within this spectrum. Our commitment to innovation ensures that, when necessary, we ...

Specifications
Center Wavelength: 1.46 um
Output Power: 1800 mW
Center Wavelength: 1460 nm
Spectral Width: 10 nm
X Axis Divergence: 9 deg
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15-Pin Fiber-Coupled Laser
SemiNex Corporation
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15-Pin Fiber-Coupled Laser
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Discover the forefront of infrared laser technology with SemiNex Corporation's High Power Multi-Mode Lasers, specifically engineered to deliver unmatched performance in the 1470 to 1550 nm wavelength range. As a leader in the industry, SemiNex is committed to pushing the boundaries of laser technology, offering customizable solutions ...

Specifications
Center Wavelength: 1.55 um
Output Power: 5400 mW
Wavelength: 1470 nm
Spectral Width: 10 nm
Slope Efficiency: 0.37 W/A
Data Sheet
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TO-9 Packaged Laser
SemiNex Corporation
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TO-9 Packaged Laser
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Welcome to SemiNex Corporation, a leader in delivering high-performance infrared laser solutions. Situated in Peabody, MA, our mission is to provide cutting-edge laser technology, specifically designed to meet the demanding requirements of various industries. Our lasers operate at infrared wavelengths ranging from 13xx to 17xx nm, ...

Specifications
Center Wavelength: 1.55 um
Output Power: 2500 mW
Wavelength λc: 1465 nm (±20)
Slope Efficiency ηo: 0.30 W/A
Fast Axis Divergence θ_X: 28 deg FWHM
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C-Mounted Laser Diode
SemiNex Corporation
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C-Mounted Laser Diode
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Discover the pinnacle of infrared laser technology with SemiNex's High Power Multi-Mode Lasers, designed to deliver unmatched power and efficiency. Operating at infrared wavelengths between 1310 nm and 1550 nm, these lasers are engineered for peak performance, offering up to 6.2 watts of continuous wave (CW) power. With a commitment ...

Specifications
Center Wavelength: 1.45 um
Output Power: 6200 mW
Wavelength Range: nm
Output Power Range (CW): Watts
Output Power - Singlemode: mW
Data Sheet
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B-Mounted Laser Diode
SemiNex Corporation
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B-Mounted Laser Diode
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SemiNex Corporation, located in Peabody, MA, is renowned for delivering the highest power available at infrared wavelengths ranging from 13xx to 17xx nm. Our commitment to excellence ensures that when necessary, we can further optimize the design of our InP laser chips to meet specific optical and electrical performance needs of our ...

Specifications
Center Wavelength: 1.47 um
Output Power: 5700 mW
Optical Wavelength λ: 1310 - 1650 nm
Chip Cavity Length CL: 2500 µm
Emitter Width W: 95 µm
Data Sheet
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High Power Multimode Laser Bars
SemiNex Corporation
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High Power Multimode Laser Bars
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SemiNex’s High Power Multi-Mode Laser Bars deliver exceptional performance at infrared wavelengths ranging from 1310 nm to 1625 nm, offering up to 25 Watts of continuous wave (CW) optical power. Engineered with InP laser chip technology, these laser bars provide high efficiency, high dynamic power range, and stable operation for ...

Specifications
Center Wavelength: 1.55 um
Output Power: 25000 mW
Optical Wavelength: 1310 - 1615
Emitter Width: 85 µm
Chip Cavity Length: 1500-2500 µm
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High Power Laser Chips
SemiNex Corporation
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High Power Laser Chips
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SemiNex’s high-power laser chips deliver exceptional optical performance at infrared wavelengths ranging from 1310 nm to 1650 nm. Designed using advanced Indium Phosphide (InP) technology, these multi-mode and single-mode laser diodes achieve continuous wave (CW) output powers up to 6.2 W, making them ideal for demanding applications ...

Specifications
Center Wavelength: 1.47 um
Output Power: 6200 mW
Wavelength: 1310 nm
Chip Cavity Length: 2500 µm
Emitter Width: 95 µm
Data Sheet
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SCW 1532-500R High Power Pulsed Laser Diode Module
OSI Laser Diode Inc.
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SCW 1532-500R High Power Pulsed Laser Diode Module
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The SCW 1532-500R laser diode module is a sophisticated and high-performance device designed for demanding optical test equipment applications. This module operates at a wavelength of 1550 nm and is built using an Aluminum Ridge Waveguide (RWG) Fabry-Pérot (F/P) laser diode. It is encased in a robust 14-pin butterfly package, ...

Specifications
Center Wavelength: 1.55 um
Output Power: 500 mW
Operating Temp. Range: oC
Threshold Current: 70 mA
Forward Voltage: 3 V
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SCW 1731F-D40R Pulsed DFB Laser Diode Module
OSI Laser Diode Inc.
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SCW 1731F-D40R Pulsed DFB Laser Diode Module
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The SCW 1731F-D40R laser diode module is a sophisticated device engineered for precision and high performance in optical test equipment applications. Encased in a robust 14-pin DIL package, this 1650 nm Al RWG DFB laser diode is designed to meet the demanding requirements of modern optical systems. The integration of a ...

Specifications
Center Wavelength: 1.65 um
Output Power: 40 mW
Operating Temp. Range: oC
Threshold Current: 40 mA
Spectral Width (RMS): 0.5 nm
Data Sheet
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