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CW Semiconductor Lasers

The 808L-1XA CW version is a 808nm low noise diode laser with up to 110mW output power. This NIR laser module comes standard with internal voltage up-conversion that allows a 5V power supply while maintaining low noise operation. The monolithic design of these laser diode modules features thermally stabilized optics in a hermetically ...

Specifications

Center Wavelength: 808 um
Output Power: 110 mW
The 785L-1XA CW version is a 785nm low noise diode laser with up to 170mW output power. This NIR laser module comes standard with internal voltage up-conversion that allows a 5V power supply while maintaining low noise operation. The monolithic design of these laser diode modules features thermally stabilized optics in a hermetically ...

Specifications

Center Wavelength: 785 um
Output Power: 170 mW
This 780nm red diode laser produces 1200mW from a 50um emitter in the free space packages or 960mW from the fiber in the fiber coupled packages. It has a low threshold current and high slope efficiency, which results in a low operating current which enhances reliability.

Specifications

Center Wavelength: 0.780 um
Output Power: 960 mW
This 1550nm red diode laser produces 1000mW from a 60um emitter in the free space packages or 800mW from the fiber in the fiber coupled packages. It has a low threshold current and high slope efficiency, which results in a low operating current which enhances reliability.

Specifications

Center Wavelength: 1.550 um
Output Power: 800 mW
This 1064nm red diode laser produces 1500mW from a 50um emitter in the free space packages or 1200mW from the fiber in the fiber coupled packages. It has a low threshold current and high slope efficiency, which results in a low operating current which enhances reliability.

Specifications

Center Wavelength: 1.064 um
Output Power: 1200 mW
The LDX-XXXX-885 is a high-power multimode laser diode designed to provide reliable and efficient laser performance at a wavelength of 885nm. This laser diode offers a wide range of output power options, with up to 6000mW in free space and up to 4800mW when used with fiber optics. It boasts high output power and dynamic range, ...

Specifications

Center Wavelength: 0.885 um
Output Power: 2500 mW
Operating Temperature: 25 °C
Threshold Current: 200 mA
Operating Current: 2500 mA
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The LDX-XXXX-860 is a versatile multimode laser diode with a wavelength of 860nm. It offers high output power and dynamic range, making it suitable for a wide range of applications. Custom packaging options are available, and custom wavelengths and laser designs can be accommodated upon request.

Specifications

Center Wavelength: 0.860 um
Output Power: 4000 mW
Operating Temperature: 25 °C
Threshold Current: 575 mA
Operating Current: 3900 mA
...
This 860nm diode laser produces 1500mW from a 100um emitter in the free space packages or 1250mW from the fiber in the fiber coupled packages. It has a low threshold current and high slope efficiency, which results in a low operating current which enhances reliability.

Specifications

Center Wavelength: 0.860 um
Output Power: 1500 mW
This 830nm diode laser produces 1600mW from a 100um emitter in the free space packages or 1280mW from the fiber in the fiber coupled packages. It has a low threshold current and high slope efficiency, which results in a low operating current which enhances reliability.

Specifications

Center Wavelength: 0.830 um
Output Power: 1600 mW
High-power diode laser bars for the most demanding applications. They are extremely reliable, efficient, and durable. This high power laser diode bar is available on the standard CS package. Other package options are available upon request. Our semiconductor products are easily assembled using standard soldering methods. The material ...

Specifications

Center Wavelength: 0.760 um
Output Power: 20000 mW
Operating Current: 28000 mA
High-power diode laser bars for the most demanding applications. They are extremely reliable, efficient, and durable. This high power laser diode bar is available on the standard CS package. Other package options are available upon request. Our semiconductor products are easily assembled using standard soldering methods. The material ...

Specifications

Center Wavelength: 0.730 um
Output Power: 20000 mW
Operating Current: 12000 mA
High-power diode laser bars for the most demanding applications. They are extremely reliable, efficient, and durable. This high power laser diode bar is available on the standard CS package. Other package options are available upon request. Our semiconductor products are easily assembled using standard soldering methods. The material ...

Specifications

Center Wavelength: 0.690 um
Output Power: 12000 mW
Operating Current: 22000 mA
High-power diode laser bars for the most demanding applications. They are extremely reliable, efficient, and durable. This high power laser diode bar is available on the standard CS package. Other package options are available upon request. Our semiconductor products are easily assembled using standard soldering methods. The material ...

Specifications

Center Wavelength: 0.680 um
Output Power: 12000 mW
Operating Current: 24000 mA
High-power diode laser bars for the most demanding applications. They are extremely reliable, efficient, and durable. This high power laser diode bar is available on the standard CS package. Other package options are available upon request. Our semiconductor products are easily assembled using standard soldering methods. The material ...

Specifications

Center Wavelength: 0.670 um
Output Power: 10000 mW
Operating Current: 21000 mA
High-power diode laser bars for the most demanding applications. They are extremely reliable, efficient, and durable. This high power laser diode bar is available on the standard CS package. Other package options are available upon request. Our semiconductor products are easily assembled using standard soldering methods. The material ...

Specifications

Center Wavelength: 0.660 um
Output Power: 10 mW
Operating Current: 21000 mA
The LBX-660-100-CSB laser diode module is part of the LaserBoxx low noise series of CW DPSS laser and laser diode modules available at a variety of wavelengths from 375nm through 980nm. The LBX lasers are a fully integrated laser diode solution that provides an extremely stable, <0.2% rms, TEM00 output beam with outstanding ...

Specifications

Center Wavelength: 0.660 um
Output Power: 100 mW
The LBX-445-100-CSB laser diode module is part of the LaserBoxx low noise series of CW DPSS laser and laser diode modules available at a variety of wavelengths from 375nm through 980nm. The LBX lasers are a fully integrated laser diode solution that provides an extremely stable, <0.2% rms, TEM00 output beam with ...

Specifications

Center Wavelength: 0.445 um
Output Power: 100 mW
The LBX-405-XXX-CSB laser diode module is part of the LaserBoxx low noise series of CW DPSS laser and laser diode modules available at a variety of wavelengths from 375nm through 980nm. The LBX lasers are a fully integrated laser diode solution that provides an extremely stable, <0.2% rms, TEM00 output beam with outstanding ...

Specifications

Center Wavelength: 0.405 um
Output Power: 100 mW
The REP series includes high-performance, tunable, single-frequency (DFB-like) diode lasers and Fabry-Perot laser diodes in wavelengths from 1270nm thru 2350nm, designed to address challenges in Gas Sensing, LIDAR, Spectroscopy, and Telecom. The REP series includes high-power and narrow linewidth options, covering various product ...

Specifications

Center Wavelength: 1.742 um
Output Power: 8 mW
The REP series includes high-performance, tunable, single-frequency (DFB-like) diode lasers and Fabry-Perot laser diodes in wavelengths from 1270nm thru 2350nm, designed to address challenges in Gas Sensing, LIDAR, Spectroscopy, and Telecom. The REP series includes high-power and narrow linewidth options, covering various product ...

Specifications

Center Wavelength: 1.654 um
Output Power: 5 mW
The REP series includes high-performance, tunable, single-frequency (DFB-like) diode lasers and Fabry-Perot laser diodes in wavelengths from 1270nm thru 2350nm, designed to address challenges in Gas Sensing, LIDAR, Spectroscopy, and Telecom. The REP series includes high-power and narrow linewidth options, covering various product ...

Specifications

Center Wavelength: 1.512 um
Output Power: 8 mW
The REP series includes high-performance, tunable, single-frequency (DFB-like) diode lasers and Fabry-Perot laser diodes in wavelengths from 1270nm thru 2350nm, designed to address challenges in Gas Sensing, LIDAR, Spectroscopy, and Telecom. The REP series includes high-power and narrow linewidth options, covering various product ...

Specifications

Center Wavelength: 1.392 um
Output Power: 8 mW
The REP series includes high-performance, tunable, single-frequency (DFB-like) diode lasers and Fabry-Perot laser diodes in wavelengths from 1270nm thru 2350nm, designed to address challenges in Gas Sensing, LIDAR, Spectroscopy, and Telecom. The REP series includes high-power and narrow linewidth options, covering various product ...

Specifications

Center Wavelength: 1.278 um
Output Power: 8 mW
StingRay - Coherent
Alrad Instruments Ltd
With a compact modular design measuring only 0.75” in diameter and using the industries’ premier laser diodes, the StingRay delivers best-in-class performance. High-quality glass optics and sophisticated drive electronics deliver the power and control to your application to improve signal-to-noise and measurement ...

Specifications

Center Wavelength: 0.639 um
Output Power: 200 mW
 The 1μm single-frequency narrow linewidth laser made by CSRayzer adopts semiconductor DFB chip, utilizes high Q-factor F-P cavity and volume grating (VBG), realizes linewidth narrowing by self-injection locking, reduces the phase noise of semiconductor laser, and realizes compact ultra-narrow linewidth output. With the ...

Specifications

Center Wavelength: 1.064 um
Output Power: 10-30 mW
Output Type: PM980 --
Lorentz Linewidth: ≤ 500 Hz
Relative Intensity Noise RIN(@10Mhz): -145 -145
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Frequently Asked Questions

Facet coating is a technique used to reduce the reflectivity of the laser cavity's end facets, which can cause optical feedback and degrade the laser's performance. By applying a thin layer of anti-reflective coating to the facets, the reflectivity can be minimized, resulting in higher output powers, better beam quality, and improved reliability.

Temperature and current are critical parameters that can affect the performance and lifetime of CW semiconductor lasers. High operating temperatures can cause degradation and failure of the laser due to increased thermal stress, while high currents can lead to increased heating, decreased efficiency, and premature aging. Careful control of temperature and current is essential for optimizing the performance and reliability of CW semiconductor lasers.

Yes, CW diode lasers are commonly used in medical and scientific applications, including biomedical imaging, microscopy, and spectroscopy. Their high efficiency, compact size, and ease of integration make them well-suited for these applications, where precise and reliable performance is critical.

Wavelength stabilization is a technique used to stabilize the output wavelength of CW semiconductor lasers by using a feedback mechanism to compensate for changes in temperature or current. This results in a more stable and consistent output wavelength, which is critical for applications such as optical communications and spectroscopy.

Quantum well design is a technique used to improve the efficiency and output power of CW semiconductor lasers by using a series of ultra-thin semiconductor layers to confine the electrons and holes in the laser's active region. This results in a higher gain, lower threshold current, and reduced heating, which can improve the laser's performance and lifetime.

Distributed feedback (DFB) lasers are a type of CW semiconductor laser that use a grating structure to provide feedback for the laser cavity. This results in a single-mode output with high spectral purity and narrow linewidth. DFB lasers are widely used in optical communications and sensing applications, where stable and precise performance is critical.

External modulation is a technique used to improve the performance of CW diode lasers by modulating the input signal externally, rather than directly modulating the laser itself. This can improve the laser's bandwidth, reduce noise, and enable higher data rates in optical communications and data networking applications.

Gain-switched lasers are a type of CW semiconductor laser that use a pulsed current to achieve a high peak power output. They offer several advantages over other types of CW semiconductor lasers, including higher peak powers, faster rise times, and lower costs. Gain-switched lasers are used in a variety of applications, including range finding, LIDAR, and materials processing.

There are 938 different CW Semiconductor Lasers from suppliers and manufacturers listed in this category. In just a few clicks you can compare different CW Semiconductor Lasers with each other and get an accurate quote based on your needs and specifications. Please note that the prices of CW Semiconductor Lasers vary significantly for different products based on various factors including technical parameters, features, brand name, etc. Please contact suppliers directly to inquire about the details and accurate pricing information for any product model. Simply navigate to the product page of interest and use the orange button to directly reach out to the respective supplier with one click.

Did You know?

The first useful semiconductor laser was made by R.N. Hall in 1962 which was composed of GaAs materials that emitted in near infrared at 0.8 µm. The semiconductor laser is similar to transistor, has the appearance of a LED but the output beam has the characteristics of a laser. The application that was the main driving force in the development of semiconductor lasers was in the field of long distance communications but at this moment the use of this laser in compact disc players constitutes their largest single market. Using semiconductor laser gives an advantage of low power consumption requirements.