High Power Laser Chips

Specifications

Center Wavelength: 1.47 um
Output Power: 6200 mW
Wavelength: 1310 nm
Chip Cavity Length: 2500 µm
Emitter Width: 95 µm
Emitter Height: 1 µm
Spectral Width: 15 nm
Slope Efficiency: 0.5 W/A
Fast Axis Divergence: 28 deg
Slow Axis Divergence: 9 deg
Threshold Current: 0.5 A
Operating Current: 16 A
Operating Voltage: 1.8 V
Series Resistance: 0.05 ohm
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Features


  • High Output Power: Delivering up to 6.2 Watts of continuous wave (CW) power, these lasers are designed for high-performance applications.

  • Multi Mode and Single Mode: Available in both multi-mode and single-mode configurations to suit diverse application needs.

  • Wide Wavelength Range: Operates at infrared wavelengths between 1310 nm and 1650 nm, with custom wavelengths available upon request.

  • High Dynamic Power Range: Ensures reliable performance across a broad range of power levels.

  • High Efficiency: Optimized for maximum power conversion efficiency to reduce energy consumption and heat generation.

  • Customizable Design: SemiNex offers design optimization to meet specific optical and electrical performance requirements of customers.

  • Robust Testing: Diodes, bars, and packages are rigorously tested to meet stringent customer and market performance demands.

Applications


  • Medical Lasers: Suitable for therapeutic and diagnostic systems requiring high IR power.

  • LIDAR: Provides reliable illumination sources for automotive and industrial LIDAR systems.

  • Free Space Communications: Enables efficient point-to-point optical communication links.

  • Targeting and Range Finding: Ideal for defense targeting and range measurement modules.

  • Military / Aerospace Systems: Supports advanced infrared sensing and countermeasure applications.