QSI 850nm 200mw Infrared Laser Diode QL85R6SA

Specifications

Center Wavelength: 0.85 um
Output Power: 200 mW
Optical Output Power: 200 mW
Laser Diode Reverse Voltage: 2 V
Photo Diode Reverse Voltage: 30 V
Operating Temperature: -10 ~ +60 ℃
Storage Temperature: -40 ~ +85 ℃
Threshold Current: 55 ~ 80 mA
Operating Current: 180 ~ 240 mA
Operating Voltage: 1.8 ~ 2.7 V
Slope Efficiency: 0.8 ~ 1.6 mW/mA
Lasing Wavelength: 840 ~ 860 nm
Beam Divergence: 5 ~ 12 deg
FWHM: 13 ~ 23 deg
Beam Angle ΔθII: -2 ~ +2 deg
Beam Angle Δθ⊥: -3 ~ +3 deg
Monitor Current: 0.1 ~ 1.2 mA
Optical Distance ΔX, ΔY, ΔZ: -80 ~ +80 μm
Minimum Order Quantity: 10 diodes (in multiples of 10)
Price For QTY 50: $1,350
Price For QTY 100: $2,500
Price For QTY 500: $10,000
Price For QTY 1000: $17,000
ECCN: EAR99
HTS: 8541.41.0000
Approximate Delivery Time To USA: 5 to 7 days
Estimated Tariff In USA: 25%
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Features


  • Laser Type: Continuous Wave (CW) Laser

  • Mode: Single Transverse / TE Mode Laser

  • Package Size: 5.6mm

  • Electrical Characteristics:

    • Reverse Voltage: 2V for Laser Diode, 30V for Photo Diode

    • Operating Current: 180mA to 240mA at 200mW

    • Operating Voltage: 1.8V to 2.7V at 200mW

    • Slope Efficiency: 0.8 to 1.6 mW/mA at 200mW



  • Beam Characteristics:

    • Beam Divergence: 5° to 12°

    • FWHM: 13° to 23°

    • Beam Angle: ΔθII: -2° to +2°, Δθ⊥: -3° to +3°



  • Monitor Current: 0.1mA to 1.2mA at 200mW

  • Applications:

    • Motion Recognition Sensor

    • Industrial Optical Module



  • Precautions:

    • Use in APC condition with heat sink and do not exceed 200mW at 60℃

    • Protect against ESD and surge currents

    • Use anti-static measures during handling

    • Ensure proper soldering techniques to avoid mechanical stress



Applications


  • Motion recognition sensors

  • Industrial optical modules

  • Inspection and metrology systems

  • Biomedical applications

  • Laser tracking

  • Imaging