QSI 850nm 200mw Infrared Laser Diode QL85R6SA
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since 2025
Description
The QSI 850nm 200mW Infrared Laser Diode (QL85R6SA/B/C) is a high-performance infrared laser diode designed to deliver exceptional optical output power of 200mW at a wavelength of 850nm. This robust component is engineered to operate efficiently within a temperature range of -10°C to +60°C, making it suitable for a variety of demanding environments. Its compact 5.6mm package ensures easy integration into various systems, providing a reliable solution for applications requiring precise motion recognition and industrial optical modules.
With a focus on durability and performance, this infrared (IR) laser diode features a continuous wave (CW) operation and a single transverse/TE mode, ensuring consistent and stable output. The device is designed to withstand reverse voltages of up to 2V for the laser diode and 30V for the photodiode, offering robust protection against electrical stress. Its slope efficiency ranges from 0.8 to 1.6 mW/mA, providing a high level of efficiency and effectiveness in converting electrical power into optical output.
Attention to detail in the design of this IR laser diode ensures minimal beam divergence, with a beam angle precision of ±2 degrees parallel and ±3 degrees perpendicular to the optical axis. This precision is crucial for applications requiring exact beam placement and minimal optical distortion. Additionally, the laser diode is equipped with protective measures against electrostatic discharge (ESD) and surge currents, safeguarding the device from potential damage during handling and operation.
To maintain optimal performance, it is essential to adhere to the absolute maximum ratings and take precautions against static electricity and surge currents. Proper grounding, the use of anti-static clothing, and careful handling during soldering are recommended to prevent damage and ensure the longevity of the laser diode. With these considerations in mind, the QL85R6SA/B/C 850nm infrared laser diode stands as a reliable and efficient choice for advanced optical applications.
QSI 850nm 200mw Infrared Laser Diode QL85R6SA
Specifications |
|
|---|---|
| Center Wavelength: | 0.85 um |
| Output Power: | 200 mW |
| Optical Output Power: | 200 mW |
| Laser Diode Reverse Voltage: | 2 V |
| Photo Diode Reverse Voltage: | 30 V |
| Operating Temperature: | -10 ~ +60 ℃ |
| Storage Temperature: | -40 ~ +85 ℃ |
| Threshold Current: | 55 ~ 80 mA |
| Operating Current: | 180 ~ 240 mA |
| Operating Voltage: | 1.8 ~ 2.7 V |
| Slope Efficiency: | 0.8 ~ 1.6 mW/mA |
| Lasing Wavelength: | 840 ~ 860 nm |
| Beam Divergence: | 5 ~ 12 deg |
| FWHM: | 13 ~ 23 deg |
| Beam Angle ΔθII: | -2 ~ +2 deg |
| Beam Angle Δθ⊥: | -3 ~ +3 deg |
| Monitor Current: | 0.1 ~ 1.2 mA |
| Optical Distance ΔX, ΔY, ΔZ: | -80 ~ +80 μm |
Features
- Laser Type: Continuous Wave (CW) Laser
- Mode: Single Transverse / TE Mode Laser
- Package Size: 5.6mm
- Electrical Characteristics:
- Reverse Voltage: 2V for Laser Diode, 30V for Photo Diode
- Operating Current: 180mA to 240mA at 200mW
- Operating Voltage: 1.8V to 2.7V at 200mW
- Slope Efficiency: 0.8 to 1.6 mW/mA at 200mW
- Beam Characteristics:
- Beam Divergence: 5° to 12°
- FWHM: 13° to 23°
- Beam Angle: ΔθII: -2° to +2°, Δθ⊥: -3° to +3°
- Monitor Current: 0.1mA to 1.2mA at 200mW
- Applications:
- Motion Recognition Sensor
- Industrial Optical Module
- Precautions:
- Use in APC condition with heat sink and do not exceed 200mW at 60℃
- Protect against ESD and surge currents
- Use anti-static measures during handling
- Ensure proper soldering techniques to avoid mechanical stress
Applications
- Motion recognition sensors
- Industrial optical modules
- Inspection and metrology systems
- Biomedical applications
- Laser tracking
- Imaging
Frequently Asked Questions
The QL85R6SA/B/C is an infrared laser with a wavelength of 850nm and an optical output power of 200mW, designed for applications such as motion recognition sensors and industrial optical modules.
The key features of this IR laser diode include an 850nm infrared laser, continuous wave operation, single transverse/TE mode, and a 5.6mm package.
The operating temperature range for the QL85R6SA/B/C laser diode is -10°C to +60°C.
Precautions include avoiding exceeding the absolute maximum ratings, preventing surge current and electrostatic discharge, grounding the device and circuits, wearing anti-static clothing, and using anti-static containers for transport and storage.
The maximum reverse voltage for the laser diode is 2V, and for the photo diode, it is 30V.
The beam divergence of this 850nm laser diode is 5 to 12 degrees parallel to the junction (θII) and 13 to 23 degrees perpendicular to the junction (θ⊥).
When soldering, attention should be given to mechanical stress and temperature, ensuring the temperature of the die-pad portion is less than 200°C.