The QSI 850nm 200mW Infrared Laser Diode (QL85R6SA/B/C) is a high-performance infrared laser diode designed to deliver exceptional optical output power of 200mW at a wavelength of 850nm. This robust component is engineered to operate efficiently within a temperature range of -10°C to +60°C, making it suitable for a variety of demanding environments. Its compact 5.6mm package ensures easy integration into various systems, providing a reliable solution for applications requiring precise motion recognition and industrial optical modules.

With a focus on durability and performance, this infrared (IR) laser diode features a continuous wave (CW) operation and a single transverse/TE mode, ensuring consistent and stable output. The device is designed to withstand reverse voltages of up to 2V for the laser diode and 30V for the photodiode, offering robust protection against electrical stress. Its slope efficiency ranges from 0.8 to 1.6 mW/mA, providing a high level of efficiency and effectiveness in converting electrical power into optical output.

Attention to detail in the design of this IR laser diode ensures minimal beam divergence, with a beam angle precision of ±2 degrees parallel and ±3 degrees perpendicular to the optical axis. This precision is crucial for applications requiring exact beam placement and minimal optical distortion. Additionally, the laser diode is equipped with protective measures against electrostatic discharge (ESD) and surge currents, safeguarding the device from potential damage during handling and operation.

To maintain optimal performance, it is essential to adhere to the absolute maximum ratings and take precautions against static electricity and surge currents. Proper grounding, the use of anti-static clothing, and careful handling during soldering are recommended to prevent damage and ensure the longevity of the laser diode. With these considerations in mind, the QL85R6SA/B/C 850nm infrared laser diode stands as a reliable and efficient choice for advanced optical applications.