1064 Single-Frequency DBR Laser Diode

Specifications

Center Wavelength: 1.06 um
Output Power: 100 mW
Operating Current, Max (CW & Pulsed): 550 mA
Optical Power At Max Operating Current: 350 mW
Storage Temperature: 0 to +70 °C
Nominal Laser Linewidth @ LIV Current: 500 kHz
Temperature Tuning Rate:: 0.06 nm/ºC
Polarization Extinction Ratio: -20 dB
Operating Temperature (Chip): +5 to +45 °C
Beam Divergence @ FWHM (θ|| X θ⊥): 6 x 28 º
Laser Forward Voltage: 5 V
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Features


  • Single Spatial Mode Beam: Provides high-quality, stable output for precise applications

  • Low Noise Performance: Ideal for frequency doubling and low-noise pump sources

  • High Reliability: Passivated facets ensure long-term durability and minimal degradation

  • Wide Power Range: Available in low-power (40–180 mW) and high-power (100–350 mW) configurations

  • Low Threshold Current: Low power threshold current for energy-efficient operation

  • Excellent Polarization Extinction Ratio: Maintains high polarization purity with a ratio of 20 dB

  • Slope Efficiency: High slope efficiency of 0.75–0.8 W/A for improved performance

Applications


  • Frequency Doubling Applications: Used as a reliable pump source for generating higher-frequency lasers

  • Precision Optical Systems: Ideal for low-noise applications requiring high stability and power control

  • Laser Spectroscopy: Supports precise wavelength and mode characteristics for accurate measurements

  • Research and Development: Suitable for laboratory setups requiring single-frequency, high-power lasers