Description
The 894.592 nm Distributed Bragg Reflector (DBR) Laser Diode is a high-performance edge-emitting laser designed for precision applications, particularly in Cesium-based atomic spectroscopy. Engineered with advanced monolithic single-frequency Gallium Arsenide (GaAs) technology, this laser diode delivers a single spatial mode beam, ensuring high beam quality and stability. Its passivated facets provide enhanced durability and reliability, making it ideal for long-term use in critical scientific applications.
This laser diode is specially Spectroscopy Certified to guarantee wavelength accuracy for the Cesium D1 transition within ±10°C from room temperature, ensuring reliable performance in precision measurement and research. Available in both low power (40-120 mW) and high power (80-240 mW) configurations, it provides flexibility to suit various operational requirements.
The 894.592 nm DBR Laser Diode is equipped with a variety of additional features, including a nominal wavelength of 894.592 nm ± 0.6 nm, high slope efficiency (0.85 W/A for low power, 0.9 W/A for high power), and minimal linewidth (500 kHz), making it a trusted choice for atomic clocks, quantum research, and high-precision spectroscopy applications. Furthermore, it offers customizable add-ons such as Mode-Hop Free (MHF) and Virtual Point Source (VPS) lenses, providing optimal beam performance and control for specialized use cases. With a wide operating temperature range and reliable packaging options, this laser diode meets the demanding needs of modern spectroscopy systems.
894.592 Single-Frequency DBR Laser Diode
Specifications
| Center Wavelength: | 0.894 um |
|---|---|
| Output Power: | 80 mW |
| Operating Current, Max (CW & Pulsed): | 350 mA |
| Optical Power At Max Operating Current: | 240 mW |
| Storage Temperature: | 0 to +70 °C |
| Nominal Laser Linewidth @ LIV Current: | 500 kHz |
| Temperature Tuning Rate: | 0.06 nm/ºC |
| Polarization Extinction Ratio: | -20 dB |
| Operating Temperature (Chip): | +5 to 45 °C |
| Beam Divergence @ FWHM (θ|| X θ⊥): | 6 x 28 º |
| Laser Forward Voltage: | 2 V |
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Features
Nominal Wavelength: 894.592 ± 0.6 nm for precise Cesium spectroscopy
Power Range: 40–240 mW, with two power options: low power (40–120 mW) and high power (80–240 mW)
Low Threshold Current: 40 mA (low power) and 50 mA (high power) for energy-efficient operation
High Slope Efficiency: 0.85 W/A (low power) and 0.9 W/A (high power) for optimal energy conversion
Reliable Performance: Guaranteed to hit Cs D1 transition ± 10°C from room temperature
Free-Space Package Add-Ons: Mode-Hop Free (MHF) and Virtual Point Source (VPS) options
Applications
Cesium Spectroscopy: Essential for precision measurement in atomic and molecular spectroscopy
Quantum Systems: Supports applications requiring stable single-frequency laser sources for quantum research
Precision Measurement: Ideal for high-accuracy applications in scientific research and development
Atomic Clocks: Crucial for Cesium-based atomic clock systems requiring narrow linewidth and stable output
Telecommunications: Used in advanced optical systems for wavelength division multiplexing (WDM) applications
Frequently Asked Questions
What is the main application of the 894.592 nm DBR Laser Diode?
What power options are available for this laser diode?
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Are there any add-ons available for this laser diode?
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