737 nm DBR Single-Frequency Laser Diode

Specifications

Center Wavelength: 0.737 um
Output Power: 40 mW
Operating Current, Max (CW & Pulsed): 200 mA
Optical Power At Max Operating Current: 80 mW
Storage Temperature: 0 to +70 °C
Nominal Laser Linewidth @ LIV Current: 500 kHz
Temperature Tuning Rate: 0.06 nm/ºC
Polarization Extinction Ratio: -20 dB
Operating Temperature (Chip): +5 to +40 °C
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Features

  • Single-Frequency DBR Laser: Monolithic GaAs-based edge-emitting laser with a fundamental mode structure
  • High Optical Power: Output power ranges from 40 mW to 80 mW for versatile applications
  • Excellent Spectral Purity: Narrow linewidth (500 kHz typical) with a high side mode suppression ratio (-40 dB)
  • Stable and Reliable: Passivated facets enhance reliability and long-term performance
  • Precision Tuning: Temperature tuning rate of 0.06 nm/°C and current tuning rate of 0.002 nm/mA for precise wavelength control
  • Multiple Packaging Options: Available in Chip on Submount (CoS), TO-8, C-Mount, and TOSA packages
  • Mode-Hop-Free (MHF) Option: Provides enhanced wavelength stability for critical applications
  • High Polarization Extinction Ratio: ≥17 dB, ensuring polarization stability

Applications

  • NV-Center Research: Ideal for quantum computing and single-photon emission studies
  • Optical-Pumped Magnetometry: Used in high-precision magnetic field sensing applications
  • Quantum Optics & Computing: Supports research in atomic, molecular, and optical physics (AMO)
  • Spectroscopy & Metrology: Provides high-resolution spectral analysis for scientific applications
  • Laser Cooling & Trapping: Enables atomic and molecular cooling techniques in experimental physics