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CW Semiconductor Lasers

The SLED Butterfly Device, model SGSLD-1XX0-XX-XX-XX-14, is a cutting-edge product. This device is meticulously designed to deliver exceptional performance in various optical applications. It features a robust construction that ensures reliability and longevity, making it an ideal choice for professionals seeking high-quality optical ...

Specifications

Center Wavelength: 1.55 um
Output Power: 10 mW
Optical Output Power: 1 - 10 mW
Forward Voltage: 2.5 V
Center Wavelength: 1290 - 1575 nm
The high power laser diodes contain an optimized GaAs substrate. They are available with various single mode pigtails - PM fibers are an option.  Depending on the product and the wavelength the maximum cw power is 500 mW. All these fiber-pigtailed laser diodes are housed in a cooled 14-pin package. As additional option they have ...

Specifications

Center Wavelength: 0.76 um
Output Power: 200 mW
The multi mode laser diodes are used in applications in material processing, illumination, and medicine. As hermetically sealed single emitter they have an ultra long lifetime and are burn-in tested. The easy-to-mount products have a robust design. All broad area single emitters from LUMICS have a ± 10 nm wavelengths ...

Specifications

Center Wavelength: 0.975 um
Output Power: 9000 mW
Introducing the SGLD-XXXX-XX-XX-FA-14 Gas Detection DFB Butterfly Device, a cutting-edge solution from SG Fusion Chip Technology Co., Ltd., designed to meet the high demands of optical transmitter systems. This product is engineered with precision and incorporates advanced technology to ensure optimal performance in various ...

Specifications

Center Wavelength: 1550 um
Output Power: 20 mW
Optical Output Power: 20 mW
Threshold Current: 20 mA
Forward Voltage: 2.0 V
Micro source photon series narrow line width semiconductor laser module, with ultra-narrow line width, ultra-low RIN noise, excellent frequency stability and reliability, is widely used in optical fiber sensing and detection systems (DTS, DVS, DAS, etc.)

Specifications

Center Wavelength: 1530 um
Output Power: 30 mW
We are pleased to introduce our 5W 793nm Chip-on-Submount (COS) laser diode, a compact, high-performance solution designed for precision applications such as fiber laser pumping, solid-state laser systems, and medical equipment. If you are currently working on systems requiring compact, high-power pump lasers, this 793nm COS diode ...

Specifications

Center Wavelength: 0.793 um
Output Power: 5000 mW
The ORION™ devices are compact laser modules employing the RIO high-performance External Cavity Laser (ECL). This laser design is based on RIO’s proprietary planar technology (PLANEX™) and consists of a gain chip and a planar lightwave circuit including waveguides with Bragg gratings, forming a laser cavity with significant ...

Specifications

Center Wavelength: 1.064 um
Output Power: 20 mW
Power Stability Over Case Temperature Range (5 To +50 ºC): +/- 20 %
Wavelength Tuning Range:: 20 pm
Wavelength Stability Over Case Temperature Range (5 To +50 ºC): ±50 pm
The LECC AD65040009 SMD Laser Module redefines miniaturization in laser technology, offering the industry's smallest laser module with a compact 2.5×2.65×6.15 mm package. Utilizing advanced Edge Emitting Laser (EEL) technology and a high-temperature-resistant aspherical glass lens, this module delivers superior optical ...

Specifications

Center Wavelength: 0.65 um
Output Power: 4 mW
CW Optical Power: 2.5 mW
Operating Current: 17 mA
Operating Voltage: 2.2 V
We supply 720W 808nm Horizontal Stack Diode Laser. With G-Stack, it has long lifetime and high reliability, stability. We specialized in Diode Laser for many years, covering most Europe and America market. Quality is our principle, we pay great attention to the quality of our products,  we focus on diode laser customizing.

Specifications

Center Wavelength: 0.808 um
Output Power: 720000 mW
TO mount wavelengths included:405nm, 445nm,450nm, 520nm, 635nm, 638nm, 640nm, 650nm, 660nm, 780nm,785nm, 795nm, 808nm, 810nm, 830nm, 850nm, 860nm, 905nm, 940nm, 980nm,1050nm, 1060nm, 1064nm, 1300nm, 1310nm, 1550nm, 1653nm, 2004nm, 2327nm,etc. Other wavelengths can also be customized, welcome to inquiry.

Specifications

Center Wavelength: 0.66 um
Output Power: 2000 mW
Wavelength stabilized diode provides narrow linewidth and very small wavelength drift against current and temperature. This 808nm laser diode comes in a 14-pin hermetically sealed butterfly package with built-in TEC, thermistor and photodiode. It emits max. 3.5W CW from a 105µm core and 0.22NA fiber. The wavelength starts to be ...

Specifications

Center Wavelength: 0.808 um
Output Power: 3500 mW
Wavelength Tolerance: +/- 1.0 nm
Spectral Linewidth (FWHM): 1.0 nm
Fiber Core Diameter: 105 µm
OL(S) Series Microchannel Cooling Housed Vertical Diode Stacks The OL(S) Series by Oriental-laser (Beijing) Co., Ltd is a revolutionary advancement in diode stack technology, offering unparalleled performance and reliability. These diode stacks are engineered with cutting-edge microchannel cooling technology, ensuring optimal thermal ...

Specifications

Center Wavelength: 0.808 um
Output Power: 40000 mW
Operation Mode: CW
Power Per Sub-mounts: 40 W
Central Wavelength³ At 25℃: 808 ±3 nm
Introducing the Narrow Linewidth Laser Module, P/N RZ-13-C34-10-FA-1-3kHz, designed for high precision applications in various fields such as distributed optical fiber sensing, optical fiber hydrophones, LIDAR, and scientific research. Our laser module features an external cavity semiconductor structure that offers narrow line-width, ...

Specifications

Center Wavelength: 1.55 um
Output Power: 16 mW
Power Stability: -0.5 to 0.5 dB
Optical Signal To Noise Ration (SNR): 60 dB
Polarization Extinction Ratio: 60 dB
The RZNLD-1550-10-BP-00-14-06-01 is a high-performance MQW DFB laser diode housed in a butterfly package designed for optical transmitter systems that require high power and stability. Featuring a built-in thermoelectric cooler (TEC) and thermistor, the device ensures stable operation across varying environmental conditions, with an ...

Specifications

Center Wavelength: 1.31 um
Output Power: 50 mW
Operating Case Temperature: -20 - +70 degC
Storage Temperature: -40 - +85 degC
Reverse Voltage: 2 V

Frequently Asked Questions

Facet coating is a technique used to reduce the reflectivity of the laser cavity's end facets, which can cause optical feedback and degrade the laser's performance. By applying a thin layer of anti-reflective coating to the facets, the reflectivity can be minimized, resulting in higher output powers, better beam quality, and improved reliability.

Temperature and current are critical parameters that can affect the performance and lifetime of CW semiconductor lasers. High operating temperatures can cause degradation and failure of the laser due to increased thermal stress, while high currents can lead to increased heating, decreased efficiency, and premature aging. Careful control of temperature and current is essential for optimizing the performance and reliability of CW semiconductor lasers.

Yes, CW diode lasers are commonly used in medical and scientific applications, including biomedical imaging, microscopy, and spectroscopy. Their high efficiency, compact size, and ease of integration make them well-suited for these applications, where precise and reliable performance is critical.

Wavelength stabilization is a technique used to stabilize the output wavelength of CW semiconductor lasers by using a feedback mechanism to compensate for changes in temperature or current. This results in a more stable and consistent output wavelength, which is critical for applications such as optical communications and spectroscopy.

Quantum well design is a technique used to improve the efficiency and output power of CW semiconductor lasers by using a series of ultra-thin semiconductor layers to confine the electrons and holes in the laser's active region. This results in a higher gain, lower threshold current, and reduced heating, which can improve the laser's performance and lifetime.

Distributed feedback (DFB) lasers are a type of CW semiconductor laser that use a grating structure to provide feedback for the laser cavity. This results in a single-mode output with high spectral purity and narrow linewidth. DFB lasers are widely used in optical communications and sensing applications, where stable and precise performance is critical.

External modulation is a technique used to improve the performance of CW diode lasers by modulating the input signal externally, rather than directly modulating the laser itself. This can improve the laser's bandwidth, reduce noise, and enable higher data rates in optical communications and data networking applications.

Gain-switched lasers are a type of CW semiconductor laser that use a pulsed current to achieve a high peak power output. They offer several advantages over other types of CW semiconductor lasers, including higher peak powers, faster rise times, and lower costs. Gain-switched lasers are used in a variety of applications, including range finding, LIDAR, and materials processing.

Continuous-Wave Semiconductor Lasers: Steady Light for Precision Applications

Continuous-wave (CW) semiconductor lasers are pivotal in various industries, offering a stable and uninterrupted laser beam ideal for applications requiring consistent illumination. Unlike pulsed lasers that emit light in bursts, CW lasers provide a constant output, making them indispensable in fields such as telecommunications, medical diagnostics, and industrial manufacturing.

Understanding CW Semiconductor Lasers

At their core, CW semiconductor lasers operate by maintaining a continuous flow of electrical current through a semiconductor material, typically composed of compounds like gallium arsenide (GaAs) or indium phosphide (InP). This process stimulates the emission of photons, resulting in a steady laser beam. The design ensures minimal fluctuations in output power, which is crucial for applications demanding high precision and reliability.

Key Features and Advantages

  • Stable Output: The continuous emission ensures uniform intensity, essential for tasks like high-resolution imaging and precise measurements.

  • Compact Design: Their small size allows for easy integration into various systems, from handheld devices to complex industrial machinery.

  • Energy Efficiency: CW semiconductor lasers typically consume less power compared to other laser types, translating to cost savings and reduced thermal management requirements.

  • Longevity: The solid-state nature of these lasers contributes to a longer operational lifespan, reducing maintenance and replacement costs.

Applications Across Industries

  • Telecommunications: CW lasers serve as light sources in fiber-optic communication systems, enabling high-speed data transmission over long distances.

  • Medical Diagnostics: Instruments like flow cytometers and optical coherence tomography devices utilize CW lasers for accurate and non-invasive diagnostics.

  • Industrial Manufacturing: CW semiconductor lasers are employed in material processing tasks such as cutting, welding, and engraving, where consistent energy delivery is paramount.

  • Scientific Research: Laboratories use these lasers in experiments requiring stable light sources, including spectroscopy and interferometry.

Selecting the Right CW Semiconductor Laser

When choosing a CW semiconductor laser, consider factors like wavelength, output power, beam quality, and compatibility with existing systems. Ensuring that the laser meets the specific requirements of your application will maximize performance and efficiency.

At FindLight, we offer a curated selection of CW semiconductor lasers from leading manufacturers, catering to a wide range of applications. Explore our catalog to find the ideal solution for your needs.

Did You know?

The first useful semiconductor laser was made by R.N. Hall in 1962 which was composed of GaAs materials that emitted in near infrared at 0.8 µm. The semiconductor laser is similar to transistor, has the appearance of a LED but the output beam has the characteristics of a laser. The application that was the main driving force in the development of semiconductor lasers was in the field of long distance communications but at this moment the use of this laser in compact disc players constitutes their largest single market. Using semiconductor laser gives an advantage of low power consumption requirements.