1039 Single-Frequency DBR Laser Diode

Specifications

Center Wavelength: 1.03 um
Output Power: 40 mW
Operating Current, Max (CW & Pulsed): 350 mA
Optical Power At Max Operating Current: 180 mW
Storage Temperature: 0 to +70 °C
Nominal Laser Linewidth @ LIV Current: 500 kHz
Temperature Tuning Rate: 0.06 nm/ºC
Polarization Extinction Ratio: -20 dB
Operating Temperature (Chip): +5 to +45 °C
Beam Divergence @ FWHM (θ|| X θ⊥): 6 x 28 º
Laser Forward Voltage: 2 V
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Features


  • Single-Frequency Operation: Stable, monolithic DBR structure ensuring single longitudinal mode output

  • Narrow Linewidth: Typical linewidth of 500 kHz for high spectral purity

  • High Power Output: Delivers up to 180 mW of optical power with a low threshold current of 30 mA

  • Low Noise and High SMSR: Excellent side mode suppression ratio (SMSR) of >40 dB

  • Precise Wavelength Tuning: 0.06 nm/°C temperature tuning rate and 0.002 nm/mA current tuning rate for accurate spectral control

  • Multiple Packaging Options: Available as CoS, MHF CoS, TO-8, C-Mount, and TOSA for integration flexibility

  • High Polarization Extinction Ratio: Ensures superior polarization stability with up to 20 dB PER

Applications


  • Quantum Optics: Ideal for quantum information processing and quantum sensing

  • High-Resolution Spectroscopy: Provides precise spectral analysis for scientific research

  • Optical Coherence Tomography (OCT): Supports high-resolution medical imaging applications

  • Frequency Doubling: Used as a low-noise seed laser for nonlinear optical applications

  • Atomic and Molecular Physics: Suitable for experiments requiring narrow-linewidth, single-frequency sources