Large Area InGaAs Photodiodes
Description
Large Area InGaAs Photodiodes
Large Area InGaAs Photodiodes
Specifications |
|
|---|---|
| Diode Type: | InGaAs |
| Wavelength Of Operation: | 1700 nm |
Features
- Active Diameter (0.5mm to 5mm)
- Cutoff Wavelength (1.7µm)
- High Shunt Resistance for High Sensitivity
- Multiple Lens Selection (Biconvex, Planoconvex, or Ball)
- Optical Filters (Neutral Density and Bandpass)
- Packages (TO-46, TO-18, TO-5 or TO-8)
Applications
- NIR Sensing/Radiometry
- LED/LD Characterization
- Medical Diagnostics
- Spectroscopy
- Raman Spectroscopy
- Spectroscopy
- Astronomy/Photometry
For pricing, technical or any other questions please contact the supplier
- No registration required
- No markups, no fees
- Direct contact with supplier
Contact Supplier
How to order?
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Ships from:
United States
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Sold by:
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On FindLight:
External Vendor
GPD Optoelectronics Corp
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Frequently Asked Questions
The applications include NIR Sensing/Radiometry, LED/LD Characterization, Medical Diagnostics, Spectroscopy, Raman Spectroscopy, Spectroscopy Astronomy/Photometry.
The available package outlines are TO-46 (modified), TO-5, TO-8 (modified), GAP500, GAP1000, GAP2000, GAP3000, and GAP5000.
The cutoff wavelength is 1.7µm.
The maximum reverse voltage is 20V for GAP500 and GAP1000, 3V for GAP2000, and 2V for GAP3000 and GAP5000.
The maximum storage temperature is -40 to 125°C.