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Si PIN Detectors

PH100-SI-HA-OD1-D0 Photodiode Detector for Laser Power Measurement
Gentec-EO
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PH100-SI-HA-OD1-D0 Photodiode Detector for Laser Power Measurement
The Gentec PH100-SI-HA-OD1-D0 is a highly sensitive photodiode detector designed for precise laser power measurement, catering to power levels up to 300 mW. With exceptional noise reduction and a wide spectral range, this detector ensures accurate and reliable measurements for various laser applications. Its compact form factor and ...

Specifications
Diode Type: Si
Wavelength Of Operation: 420 - 1080 nm
Max Frequency Response: Other / Not specified
Active Area Size: Custom Size
Dark Current: < 1 nA, 1-10 nA, 10-100 nA, > 100 nA
...
Data Sheet
PH100-SI-HA-OD2-D0 Photodiode Laser Power Detector
Gentec-EO
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PH100-SI-HA-OD2-D0 Photodiode Laser Power Detector
The PH100-SI-HA-OD2-D0 is a high-quality photodiode detector designed for laser power measurement up to 750 mW. It offers accurate and reliable power measurement capabilities with a large aperture of 10 mm Ø for the silicon sensors. With three different versions available, including Silicon 350-1080 nm (up to 750 mW), ...

Specifications
Diode Type: Si
Wavelength Of Operation: 630-1080 nm
Maximum Average Power: 750 mW
Noise Equivalent Power: 2 nW
Typical Rise Time: 0.2 s
...
Data Sheet
Gentec-EO High Power Detector PH100-SI-HA-OD2-D0
Gentec-EO
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Gentec-EO High Power Detector PH100-SI-HA-OD2-D0
The Gentec-EO Photo Detector family includes nine photo detectors sensors. The PH100-Si, PH100Si-HA detectors use a silicon photodiode. The PH100-SiUV, PH10B-Si, PE10B-Si, PE3B-Si detectors also use a silicon photodiode but have enhanced sensitivity at shorter wavelengths. The PH20-Ge, PH5B-Ge, PE5B-Ge detectors use a germanium ...

Specifications
Diode Type: Si
Wavelength Of Operation: 630 - 1080 nm
Data Sheet
Gentec-EO High Power Detector PH100-SI-HA-OD1-D0
Gentec-EO
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Gentec-EO High Power Detector PH100-SI-HA-OD1-D0
The Gentec-EO Photo Detector family includes nine photo detectors sensors. The PH100-Si, PH100Si-HA detectors use a silicon photodiode. The PH100-SiUV, PH10B-Si, PE10B-Si, PE3B-Si detectors also use a silicon photodiode but have enhanced sensitivity at shorter wavelengths.   The PH20-Ge, PH5B-Ge, PE5B-Ge detectors ...

Specifications
Diode Type: Si
Wavelength Of Operation: 420 - 1080 nm
Data Sheet
Gentec-EO Photodiode Detector PH100-SIUV-OD1-D0
Gentec-EO
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Gentec-EO Photodiode Detector PH100-SIUV-OD1-D0
The Gentec-EO Photo Detector family includes nine photo detectors sensors. The PH100-Si, PH100Si-HA detectors use a silicon photodiode. The PH100-SiUV, PH10B-Si, PE10B-Si, PE3B-Si detectors also use a silicon photodiode but have enhanced sensitivity at shorter wavelengths. The PH20-Ge, PH5B-Ge, PE5B-Ge detectors use a germanium ...

Specifications
Diode Type: Si
Wavelength Of Operation: 400 - 1080 nm
Data Sheet
Gentec-EO Photodiode Detector PH100-SIUV-OD.3-D0
Gentec-EO
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Gentec-EO Photodiode Detector PH100-SIUV-OD.3-D0
The Gentec-EO Photo Detector family includes nine photo detectors sensors. The PH100-Si, PH100Si-HA detectors use a silicon photodiode. The PH100-SiUV, PH10B-Si, PE10B-Si, PE3B-Si detectors also use a silicon photodiode but have enhanced sensitivity at shorter wavelengths. The PH20-Ge, PH5B-Ge, PE5B-Ge detectors use a germanium ...

Specifications
Diode Type: Si
Wavelength Of Operation: 400 - 1080 nm
Data Sheet
Low Noise 400 kHz Photoreceiver With Si PIN Photodiode LCA-S-400K-SI
FEMTO Messtechnik GmbH
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Low Noise 400 kHz Photoreceiver With Si PIN Photodiode LCA-S-400K-SI
By combining state of the art photodiodes with the proven and outstanding FEMTO LCA Current Amplifier technology we designed a new family of photoreceivers with a remarkable performance. The LCA-S-400K is available with either a large area Si or InGaAs photodiode covering a spectral range from 400 to 1100 nm and 900 to 1700 nm, ...

Specifications
Diode Type: Si
Wavelength Of Operation: 320-1060 nm
Data Sheet
Ultra-Low Noise 2 kHz Photoreceiver With Si-PIN Photodiode PWPR-2K-SI
FEMTO Messtechnik GmbH
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Ultra-Low Noise 2 kHz Photoreceiver With Si-PIN Photodiode PWPR-2K-SI
In addition to precise and fast cw-measurements the relatively large bandwidth from DC to 2 kHz also allows time-resolved and modulated measurements. Particularly the combination with lock-in amplifiers results in ultra-sensitive measurement systems being almost immune to disturbances from external sources. In this way the PWPR-2K ...

Specifications
Diode Type: Si
Wavelength Of Operation: 320-1060 nm
Data Sheet
Femtowatt Photoreceiver With Si Photodiode FWPR-20-SI
FEMTO Messtechnik GmbH
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Femtowatt Photoreceiver With Si Photodiode FWPR-20-SI
The series FWPR-20 photoreceivers combine low noise Si or InGaAs PIN photodiodes with a specially designed transimpedance amplifier with extremely high gain of up to 1012 V/A and very low noise. This unique combination results in a photoreceiver with Femtowatt sensitivity due to its exceptional low NEP of 0.7 fW/√Hz. Direct detection ...

Specifications
Diode Type: Si
Wavelength Of Operation: 320-1060 nm
Data Sheet
TFMD5000B Silicon PIN Photodiode
Three Five Materials
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TFMD5000B Silicon PIN Photodiode
TFMD5000 is a new device has a super low profile and an overall dimension of 5x4x1.1mm. It can accept a PIN photodiode chip with an active area up to 10mm square. In order to meet the strict requirements for different sensing applications, this device comes in 3 different versions: standard clear encapsulation lens for ...

Specifications
Diode Type: Si
Wavelength Of Operation: 950 nm
Data Sheet
TFMD5000R Silicon PIN Photodiode
Three Five Materials
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TFMD5000R Silicon PIN Photodiode
TFMD5000 is a new device has a super low profile and an overall dimension of 5x4x1.1mm. It can accept a PIN photodiode chip with an active area up to 10mm square. In order to meet the strict requirements for different sensing applications, this device comes in 3 different versions: standard clear encapsulation lens for ...

Specifications
Diode Type: Si
Wavelength Of Operation: 950 nm
Data Sheet
TFMD5000 Silicon PIN Photodiode
Three Five Materials
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TFMD5000 Silicon PIN Photodiode
TFMD5000 is a new device has a super low profile and an overall dimension of 5x4x1.1mm. It can accept a PIN photodiode chip with an active area up to 10mm square. In order to meet the strict requirements for different sensing applications, this device comes in 3 different versions: standard clear encapsulation lens for ...

Specifications
Diode Type: Si
Wavelength Of Operation: 1050 nm
Data Sheet
FP1-850K Photodetectors
Inject Enterprise
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FP1-850K Photodetectors
A photodiode of the type FP1-850K with a spectral sensitivity range of 810-870 nm with the introduction of radiation into the body through a multimode fiber with a core diameter 50 μm. It is made on the basis of a silicon pin photodiode   for use in fiber-optic communication systems, gyroscopes, measuring equipment and other ...

Specifications
Diode Type: Si
Wavelength Of Operation: 810 nm
Data Sheet
CLD240 Silicon Photodiodes
Clairex Technologies
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CLD240 Silicon Photodiodes
The CLD240 series are new, direct replacements for the older CLD140 series and feature larger (0.060” x 0.060”) active area silicon PIN photodiode chips. Also featured are faster switching and lower junction capacitance. Three different lensing options are offered which satisfy the majority of application requirements. ...

Specifications
Diode Type: Si
Wavelength Of Operation: 850 nm
Data Sheet
CFD470 Fiber Optic PIN Photodiode
Clairex Technologies
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CFD470 Fiber Optic PIN Photodiode
The CFD470 contains a PIN silicon photodiode mounted on a TO-18 header. The devices are designed to self-align in the 0.228” (5.79mm) bore of a standard fiber-optic receptacle. Three crush ribs on the outside of the case provide press-fit installation and precise alignment. The CFD470 is designed to interface with multimode optical ...

Specifications
Diode Type: Si
Wavelength Of Operation: 880 nm
Data Sheet
CLD171 Silicon Photodiodes
Clairex Technologies
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CLD171 Silicon Photodiodes
The CLD171 and CLD171R, are 0.122\" x 0.122\" active area silicon photodiodes featuring high linearity and low dark current. They are epoxy encapsulated for lower cost applications. Wide acceptance angle permits use in IR air communications, ambient light detection, safety and monitoring, security systems, etc.  

Specifications
Diode Type: Si
Wavelength Of Operation: 860 nm
Data Sheet
CLD160 Silicon Photodiodes
Clairex Technologies
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CLD160 Silicon Photodiodes
The CLD160 is a 0.122\" x 0.122\" active area silicon photodiode mounted in a flat window TO-5 package. Wide acceptance angle permits use in IR air communications ambient light detection, safety and monitoring, security systems, etc. For additional information, call Clairex.

Specifications
Diode Type: Si
Wavelength Of Operation: 860 nm
Data Sheet
CLD156 Silicon Photodiodes
Clairex Technologies
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CLD156 Silicon Photodiodes
The CLD156 and CLD156R are 0.122\" x 0.222\" active area silicon photodiodes featuring high linearity and low dark current. The TO-5 header provides thermal environment for reliable operation over a wide temperature range. Wide acceptance angle permits use in IR air communications, ambient light detection, safety and monitoring, ...

Specifications
Diode Type: Si
Wavelength Of Operation: 860 nm
Data Sheet
SXUV300CDS EUV Enhanced Detectors
Opto Diode
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SXUV300CDS EUV Enhanced Detectors
OPTO DIODE EUV Enhanced Detectors.

Specifications
Diode Type: Si
Wavelength Of Operation: 1 - 1000 nm
Responsivity At 13.5nm: 0.22 A/W
Data Sheet
SXUV20HS1DS EUV Enhanced Detectors
Opto Diode
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SXUV20HS1DS EUV Enhanced Detectors
OPTO DIODE EUV Enhanced Detectors.  

Specifications
Diode Type: Si
Wavelength Of Operation: 1 - 1000 nm
Responsivity At 13.5nm: 0.22 A/W
Data Sheet
SXUV20CDS EUV Enhanced Detectors
Opto Diode
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SXUV20CDS EUV Enhanced Detectors
OPTO DIODE EUV Enhanced Detectors.  

Specifications
Diode Type: Si
Wavelength Of Operation: 1 - 1000 nm
Responsivity At 13.5nm: 0.22 A/W
Data Sheet
SXUV100DS EUV Enhanced Detectors
Opto Diode
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SXUV100DS EUV Enhanced Detectors
OPTO DIODE EUV Enhanced Detectors.  

Specifications
Diode Type: Si
Wavelength Of Operation: 1 - 1000 nm
Responsivity At 13.5nm: 0.22 A/W
Data Sheet
ODD-5WISOL Visible Blue And Red Enhanced Detectors
Opto Diode
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ODD-5WISOL Visible Blue And Red Enhanced Detectors
OPTO DIODE Visible Blue and Red Enhanced Isolated Detectors.

Specifications
Diode Type: Si
Wavelength Of Operation: 300 - 1100 nm
Responsivity At 632m: 0.4 A/W
Data Sheet
ODD-5WBISOL Visible Blue And Red Enhanced Detectors
Opto Diode
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ODD-5WBISOL Visible Blue And Red Enhanced Detectors
OPTO DIODE Visible Blue and Red Enhanced Isolated Detectors.  

Specifications
Diode Type: Si
Wavelength Of Operation: 400 - 1100 nm
Responsivity At 450m: 0.28 A/W
Data Sheet
ODD-5WB Visible Blue And Red Enhanced Detectors
Opto Diode
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ODD-5WB Visible Blue And Red Enhanced Detectors
OPTO DIODE Visible Blue and Red Enhanced Detectors.

Specifications
Diode Type: Si
Wavelength Of Operation: 400 - 1100 nm
Responsivity At 450m: 0.28 A/W
Data Sheet
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