PIN Detectors

PH100-SI-HA-OD1-D0 Photodiode Detector for Laser Power Measurement

PH100-SI-HA-OD1-D0 Photodiode Detector for Laser Power Measurement

The Gentec PH100-SI-HA-OD1-D0 is a highly sensitive photodiode detector designed for precise laser power measurement, catering to power levels up to 300 mW. With exceptional noise reduction and a wide spectral ...

Sold by: Gentec-EO Ships from: Canada
Specifications
Diode Type: Si
Wavelength Of Operation: 420 nm
Max Frequency Response: Other / Not specified
Active Area Size: Custom Size
Dark Current: < 1 nA, 1-10 nA, 10-100 nA, > 100 nA
EQ Photonics GmbH - EUV Photodiode - SXUV100TF135

EQ Photonics GmbH - EUV Photodiode - SXUV100TF135

EQ Photonics  offers Silicon Photodiodes, Photodiode amplifier combinations, PbS and PbSe Detectors and LEDs. Typical applications for their products include photo-electric controls; medical, scientific ...

Sold by: EQ Photonics Ships from: Germany
Specifications
Diode Type: Si
Wavelength Of Operation: 13.5 nm
Max Frequency Response: DC - 10 MHz
Active Area Size: 10 mm²
Dark Current: 1-10 nA
InGaAs Photodiodes IG17-Series

InGaAs Photodiodes IG17-Series

The IG17-series is a panchromatic PIN photodiode with a nominal wavelength cut-off at 1.7um. This series has been designed for demanding spectroscopic and radiometric applications. It offers excellent shunt ...

Sold by: Laser Components USA, Inc. Ships from: United States
Specifications
Diode Type: InGaAs
Wavelength Of Operation: 1700 nm
Max Frequency Response: N/A
Active Area Size: N/A
Dark Current: N/A
Extended InGaAs Photodiodes IG22-26 Series

Extended InGaAs Photodiodes IG22-26 Series

The IG22-26 are a series of panchromatic PIN photodiodes with a wavelength range covering 500 - 2600 nm, depending on the option. The series have been designed for demanding spectroscopic and radiometric ...

Sold by: Laser Components USA, Inc. Ships from: United States
Specifications
Diode Type: InGaAs
Wavelength Of Operation: 2600 nm
Max Frequency Response: N/A
Active Area Size: N/A
Dark Current: N/A
PbSe Detectors PB-Series

PbSe Detectors PB-Series

Polycrystalline PbSe is still one of the best MWIR detectors on the market for high performance without cooling. The detectors can be used uncooled at a wavelength up to 4.7 μm. At low temperatures, they achieve ...

Sold by: Laser Components USA, Inc. Ships from: United States
Specifications
Diode Type: PbSe
Wavelength Of Operation: 5200 nm
Max Frequency Response: N/A
Active Area Size: N/A
Dark Current: N/A
PbS Detectors PB-Series

PbS Detectors PB-Series

Polycrystalline lead sulfide detectors (PbS) detect infrared radiation in the wavelength range between 1 µm and 3.3 µm and provide the best price-performance ratio in large active areas for the SWIR ...

Sold by: Laser Components USA, Inc. Ships from: United States
Specifications
Diode Type: PbS
Wavelength Of Operation: 3300 nm
Max Frequency Response: N/A
Active Area Size: N/A
Dark Current: N/A
PH20-GE-OD2-D0 Photodiode Detector for Laser Power Measurement

PH20-GE-OD2-D0 Photodiode Detector for Laser Power Measurement

The PH20-GE-OD2-D0 photodiode detector is an advanced solution for precise laser power measurement, capable of handling up to 500 mW. This device is engineered to deliver high accuracy and reliability, making it an ...

Sold by: Gentec-EO Ships from: Canada
Specifications
Diode Type: Ge
Wavelength Of Operation: 950 nm
Max Frequency Response: Other / Not specified
Active Area Size: Custom Size
Dark Current: < 1 nA, 1-10 nA, 10-100 nA, > 100 nA
200MHz Low noise and high bandwidth InGaAs PIN Balance detector RZPD-200M-AC

200MHz Low noise and high bandwidth InGaAs PIN Balance detector RZPD-200M-AC

The RZPD-200M-AC is an advanced InGaAsPIN balanced photodetector designed for ultra-low noise, high-bandwidth applications. This detector integrates two matched photodiodes, a high-speed amplification circuit, and a ...

Sold by: CSRayzer Optical Technology Ships from: China
Specifications
Diode Type: InGaAs
Wavelength Of Operation: 800 nm
Max Frequency Response: Other / Not specified
Active Area Size: N/A
Dark Current: N/A
PH100-SiUV-OD1-D0 Photodiode Laser Power Detector 38 mW

PH100-SiUV-OD1-D0 Photodiode Laser Power Detector 38 mW

The PH100-SiUV-OD1-D0 Photodiode Laser Power Detector by Gentec-EO is a sophisticated tool designed for precise laser power measurement. This device is engineered to handle power levels up to 38 mW, making it an ...

Sold by: Gentec-EO Ships from: Canada
Specifications
Diode Type: Si
Wavelength Of Operation: 400 nm
Maximum Average Power: 38 mW
Noise Equivalent Power: 100 pW
Spectral Range: 400 - 1080 nm
Gentec-EO Photodiode Detector PH20-GE-OD1-D0

Gentec-EO Photodiode Detector PH20-GE-OD1-D0

The PH20-GE-OD1-D0 Photodiode Laser Power Detector by Gentec-EO is a precision instrument designed for accurate laser power measurement, capable of handling up to 300 mW. This device is engineered to meet the needs ...

Sold by: Gentec-EO Ships from: Canada
Specifications
Diode Type: Ge
Wavelength Of Operation: 900 nm
Maximum Average Power: 300 mW
Noise Equivalent Power: 600 pW
Spectral Range: 900 - 1650 nm
Gentec-EO Photodiode Detector PH100-SIUV-OD.3-D0

Gentec-EO Photodiode Detector PH100-SIUV-OD.3-D0

The Gentec-EO Photo Detector family includes nine photo detectors sensors. The PH100-Si, PH100Si-HA detectors use a silicon photodiode. The PH100-SiUV, PH10B-Si, PE10B-Si, PE3B-Si detectors also use a silicon ...

Sold by: Gentec-EO Ships from: Canada
Specifications
Diode Type: Si
Wavelength Of Operation: 400 nm
Ascentta Single Mode Fiber Photodiode (1250-1650nm)

Ascentta Single Mode Fiber Photodiode (1250-1650nm)

Ascentta's photodiode is widely used for the detection of the existence, intensity, position and color of light. Ascentta's photodiode designed to work in 1250-1650nm wavelength range.   Ascentta also ...

Sold by: Ascentta Ships from: United States
Specifications
Diode Type: Other
Wavelength Of Operation: 1250 nm
Max Frequency Response: Other / Not specified
Active Area Size: Custom Size
Dark Current: < 1 nA
ROF High Sensitivity Photodetector - InGaAs Photoreceiver - High Speed InGaAs Photodetector

ROF High Sensitivity Photodetector - InGaAs Photoreceiver - High Speed InGaAs Photodetector

Rofea independently developed photodetector integrated photodiode and low noise amplifier circuit, while providing a variety of products, for scientific research users Provide quality product customization service, ...

Specifications
Diode Type: InGaAs
Wavelength Of Operation: 1000 nm
Max Frequency Response: Other / Not specified
Active Area Size: Custom Size
Dark Current: 1-10 nA
PH100-SI-HA-OD2-D0 Photodiode Laser Power Detector

PH100-SI-HA-OD2-D0 Photodiode Laser Power Detector

The PH100-SI-HA-OD2-D0 is a high-quality photodiode detector designed for laser power measurement up to 750 mW. It offers accurate and reliable power measurement capabilities with a large aperture of 10 mm Ø ...

Sold by: Gentec-EO Ships from: Canada
Specifications
Diode Type: Si
Wavelength Of Operation: 630 nm
Maximum Average Power: 750 mW
Noise Equivalent Power: 2 nW
Typical Rise Time: 0.2 s
PH100-Si-HA-OD2-D0 Photodiode Laser Power Detector 750 mW

PH100-Si-HA-OD2-D0 Photodiode Laser Power Detector 750 mW

The PH100-SI-HA-OD2-D0 is a state-of-the-art photodiode laser power detector designed by Gentec-EO, a leader in laser measurement technology. This advanced device is engineered to measure laser power with ...

Sold by: Gentec-EO Ships from: Canada
Specifications
Diode Type: Si
Wavelength Of Operation: 630 nm
Maximum Average Power: 750 mW
Noise Equivalent Power: 1 nW
Spectral Range: 630 - 1080 nm
InGaAs PIN Balance Detector

InGaAs PIN Balance Detector

Introducing the RZPD-200M-AC, a high-performing InGaAsPIN balancing detector that offers both low noise and high bandwidth for ultra-sensitive detection applications. This detector is designed with two balanced ...

Sold by: CSRayzer Optical Technology Ships from: China
Specifications
Diode Type: InGaAs
Wavelength Of Operation: 1550 nm
Operating Temperature: -40 to +85 degC
Storage Temperature: -55 t +100 degC
Saturation Input Optical Power: 150 uW
300MHz Low noise and high bandwidth InGaAs PIN Balance Detector RZPD-300M-AC

300MHz Low noise and high bandwidth InGaAs PIN Balance Detector RZPD-300M-AC

The RZPD-300M-AC is a low-noise, high-bandwidth InGaAs PIN balancing detector consisting of two balanced photodiodes, ultra-low noise high-speed amplification circuit, and noise floor power supply. The two ...

Sold by: CSRayzer Optical Technology Ships from: China
Specifications
Diode Type: InGaAs
Wavelength Of Operation: -300 nm
Max Frequency Response: Other / Not specified
Package Type: Surface Mount
Built-In Amplifier: Yes
150MHz Low Noise Adjustable Gain SI PIN  Balance Detector ZKPD-150M-CG-DC

150MHz Low Noise Adjustable Gain SI PIN Balance Detector ZKPD-150M-CG-DC

ZKPD-150M-CG-DC is a low noise high bandwidth SI PIN balance detector consisting of two balanced photodiodes with ultra-low noise. Sound high-speed adjustable gain amplification circuit and low-noise power supply. ...

Sold by: CSRayzer Optical Technology Ships from: China
Specifications
Diode Type: Si
Wavelength Of Operation: 320 nm
Max Frequency Response: Other / Not specified
Package Type: Surface Mount
Built-In Amplifier: Yes
ROF Si Photodetector PR-200M Series Photodetector High-Speed PIN Detector

ROF Si Photodetector PR-200M Series Photodetector High-Speed PIN Detector

ROF-PR-200M series photodetector integrates high-speed PIN detector and low noise amplifier, fiber or free space coupling, SMA connector output, with high gain, high sensitivity, gain flat and other characteristics, ...

Specifications
Diode Type: InGaAs
Wavelength Of Operation: 850 nm
Max Frequency Response: Other / Not specified
Active Area Size: Custom Size
Dark Current: 10-100 nA
PVI-5-1x1-TO39-NW-36 Uncooled IR Photovoltaic Detector

PVI-5-1x1-TO39-NW-36 Uncooled IR Photovoltaic Detector

The PVI-5-1×1-TO39-NW-36 is an advanced uncooled infrared photovoltaic detector designed by VIGO System S.A. This state-of-the-art device is crafted using a sophisticated HgCdTe heterostructure, ensuring ...

Sold by: VIGO Photonics Ships from: United States
Specifications
Diode Type: HgCdTe
Wavelength Of Operation: 5000 nm
Max Frequency Response: Other / Not specified
Active Area Size: Custom Size
Dark Current: 1-10 nA
HgCdTe (MCT) Photovoltaic Detector

HgCdTe (MCT) Photovoltaic Detector

The PVI-2TE-4-1×1-TO8-wAl2O3-36 is a state-of-the-art infrared photovoltaic detector designed by VIGO System S.A. This advanced device is engineered with a sophisticated HgCdTe heterostructure, ensuring optimal ...

Sold by: VIGO Photonics Ships from: United States
Specifications
Diode Type: HgCdTe
Wavelength Of Operation: 4000 nm
Max Frequency Response: Other / Not specified
Active Area Size: Custom Size
Dark Current: 1-10 nA

Did You Know?

The revolutionary PIN photodiode, a cornerstone in the optoelectronics industry, was ingeniously developed by Jun-ichi Nishizawa and his brilliant team back in 1950. This semiconductor marvel is notably comprised of an intrinsic region, which is lightly doped, flanked by a p-type layer on one side and an n-type layer on the other. What’s particularly captivating about the PIN diode is its dual functionality - it not only operates as a dynamic, variable resistor at radio frequencies (RF) and microwaves but also astoundingly converts light into electrical signals. With a myriad of applications, the PIN diode is an unsung hero in RF switches, attenuators, photodetectors, and phase shifters. Its performance is critically governed by the RC time constant, which is instrumental in determining the frequency response of the PIN device. Diving into the spectrum sensitivity, PIN photodiodes showcase an impressively broad spectral range, encompassing the near-infrared through ultraviolet, and astonishingly extending into high-energy regions. This makes them immeasurably valuable across various industries including telecommunications, medical imaging, and scientific research. What sets the PIN photodiode apart is its trifecta of high-speed response, high sensitivity, and low noise. This combination makes it an unparalleled choice for applications that demand rapid and accurate detection of light.

Frequently Asked Questions

PIN Detectors are photodetectors that consist of a p-type region, an intrinsic (undoped) region, and an n-type region. They are widely used for detecting and measuring optical power or intensity across a broad range of wavelengths, from ultraviolet (UV) to infrared (IR).

PIN Detectors: An In-Depth Analysis

PIN detectors, also known as PIN photodiodes, are essential tools in the realm of optoelectronics. They are widely used for converting light into electrical signals. This comprehensive guide offers insights into the working principles, types, applications, and considerations of PIN detectors.

Introduction to PIN Detectors

PIN detectors are a type of photodetector that stands for P-type, Intrinsic, N-type. These detectors are utilized to convert light into current or voltage through the photoelectric effect. They are known for their ability to operate at high frequencies, making them particularly suited for applications in telecommunications, data communication, and high-speed light detection.

Working Principle of PIN Detectors

PIN detectors consist of a p-type and n-type semiconductor separated by an intrinsic (undoped) semiconductor layer. When photons of light hit the intrinsic region of the detector, electron-hole pairs are generated. The presence of an electric field causes the electrons to move toward the n-type layer and the holes toward the p-type layer, generating an electric current proportional to the light intensity.

Types of PIN Detectors

Silicon PIN Detectors: Silicon PIN detectors are sensitive to wavelengths in the visible and near-infrared spectrum (around 400 to 1100 nm). They are widely used in applications requiring detection in this wavelength range.

InGaAs PIN Detectors: Indium Gallium Arsenide (InGaAs) PIN detectors are used for longer wavelengths, typically in the range of 800 to 1700 nm. These are commonly used in fiber optic communication systems.

Germanium PIN Detectors: Germanium-based PIN detectors are sensitive to wavelengths between around 800 to 1800 nm. They are less common than InGaAs detectors but are still used in certain specialized applications.

Applications of PIN Detectors

Telecommunications: In the field of telecommunications, PIN detectors are integral components in fiber-optic communication systems. They are used to convert optical signals back into electrical signals at the receiving end.

Data Communication: PIN detectors are also used in data communication networks, such as Ethernet, where high-speed data is transmitted over optical fibers.

Sensing and Measurement: In sensing applications, PIN detectors can be used to measure light levels, for instance in LIDAR systems for distance measurement or in spectrometers for analyzing light spectra.

Medical Imaging: In medical imaging, PIN detectors are used to detect light in devices such as computed tomography (CT) scanners and certain types of X-ray equipment.

Considerations When Choosing a PIN Detector

When selecting a PIN detector for a specific application, it is important to consider:

  • Wavelength Sensitivity: Ensure that the detector is sensitive to the wavelength range of interest.
  • Speed Requirements: If your application requires high-speed detection, choose a detector that can operate at the required frequencies.
  • Noise Characteristics: Low noise levels are crucial for applications requiring high sensitivity.
  • Power Requirements: Consider the power requirements of the detector and ensure it is compatible with your system.

  
Conclusion

PIN detectors are versatile and high-performance devices that play a critical role in a wide range of applications involving light detection and measurement. Understanding the working principles, types, and applications of PIN detectors is essential for selecting the appropriate device for your specific needs. Whether it is telecommunications, data communications, sensing, or medical imaging, PIN detectors prove to be invaluable assets in the field of optoelectronics.