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2.4 – 5.5 µm, ambient temperature, optically immersed PVI-5-1×1-TO39-NW-36 is uncooled IR photovoltaic detector based on sophisticated HgCdTe heterostructure for the best performance and stability. The device is optimized for the maximum performance at λopt = 5 µm. Detector element is ...
  • Diode Type: HgCdTe
  • Wavelength Of Operation: 5000 nm
  • Spectral Response: 2.4 – 5.5 µm 
Data Sheet
2.4 – 4.3 µm, ambient temperature, optically immersed PVI-2TE-4-1×1-TO8-wAl2O3-36 is two-stage thermoelectrically cooled IR photovoltaic detector based on sophisticated HgCdTe heterostructure for the best performance and stability. The device is optimized for the maximum performance at λopt = 4.0 ...
  • Diode Type: HgCdTe
  • Wavelength Of Operation: 4000 nm
  • Spectral Response: 2.4 – 4.3 µm 
Data Sheet
2.0 – 3.4 µm, two-stage thermoelectrically cooled PVA-2TE-3-0.1×0.1-TO8-wAl2O3-70 is a two-stage thermoelectrically cooled IR photovoltaic detector based on InAs alloy. It does not contain mercury or cadmium and is complying with the RoHS Directive. 3° wedged sapphire (wAl2O3) window prevents unwanted ...
  • Diode Type: Other
  • Wavelength Of Operation: 3000 nm
  • Spectral Response: 2.0 – 5.5 µm 
Data Sheet
2.0 – 12.0 µm HgCdTe ambient temperature photovoltaic multiple junction quadrant detectorPVMQ is uncooled IR photovoltaic multiple junction quadrant detector based on sophisticated HgCdTe heterostructures for the best performance and stability. Quadrant detector consists of four separate active elements arranged in a quadrant ...
  • Diode Type: HgCdTe
  • Wavelength Of Operation: 10,600 nm
  • Spectral Range: 2.0 – 12.0 µm 
Data Sheet
1.0 – 14.0 µm, three-stage thermoelectrically cooled, optically immersed PCI-3TE-12-1×1-TO8-wZnSeAR-36 is a three-stage thermoelectrically cooled IR photoconductor, based on sophisticated HgCdTe heterostructure for the best performance and stability. The device is optimized for the maximum performance at λopt = 12 µm. ...
  • Diode Type: HgCdTe
  • Wavelength Of Operation: 12000 nm
  • Spectral Range: 1 to 14 µm  
Data Sheet
The Gentec-EO Photo Detector family includes nine photo detectors sensors.The PH100-Si, PH100Si-HA detectors use a silicon photodiode. The PH100-SiUV, PH10B-Si, PE10B-Si, PE3B-Si detectors also use a silicon photodiode but have enhanced sensitivity at shorter wavelengths. The PH20-Ge, PH5B-Ge, PE5B-Ge detectors use a germanium ...
  • Diode Type: Si
  • Wavelength Of Operation: 420 - 1080 nm
Data Sheet
The Gentec-EO Photo Detector family includes nine photo detectors sensors. The PH100-Si, PH100Si-HA detectors use a silicon photodiode. The PH100-SiUV, PH10B-Si, PE10B-Si, PE3B-Si detectors also use a silicon photodiode but have enhanced sensitivity at shorter wavelengths. The PH20-Ge, PH5B-Ge, PE5B-Ge detectors use a germanium ...
  • Diode Type: Ge
  • Wavelength Of Operation: 950 - 1650 nm
Data Sheet
AP-35 PbS Detector For 1-3.1µm
AP Technologies Ltd
The A Series single channel infrared detectors integrates PbS technology with proven manufacturing processes to provide the highest sensitivity detectors across the spectral range from one to three microns. In addition, the product line minimizes maintenance costs and provides dependable operation with industry leading quality, ...
  • Diode Type: PbS
  • Wavelength Of Operation: 1000 nm
Data Sheet
AP-25G PbS Detector For 1-3.1µm
AP Technologies Ltd
The A Series single channel infrared detectors integrates PbS technology with proven manufacturing processes to provide the highest sensitivity detectors across the spectral range from one to three microns. In addition, the product line minimizes maintenance costs and provides dependable operation with industry leading quality, ...
  • Diode Type: PbS
  • Wavelength Of Operation: 1000 nm
Data Sheet
AP-15G PbS Detector For 1-3.1µm
AP Technologies Ltd
The A Series single channel infrared detectors integrates PbS technology with proven manufacturing processes to provide the highest sensitivity detectors across the spectral range from one to three microns. In addition, the product line minimizes maintenance costs and provides dependable operation with industry leading quality, ...
  • Diode Type: PbS
  • Wavelength Of Operation: 1000 nm
Data Sheet
InGaAs PIN Photodiode PIN0500-17-D-TO
ANDANTA GmbH
InGaAs PIN Photodiodes.
  • Diode Type: InGaAs
  • Wavelength Of Operation: 900 nm
Data Sheet
25 Gbit-s p-i-n Photodiode Chips And Photodiode Array Chips 850 nm
Connector Optics LLC
Our compact, top illuminated, low capacitance, high speed GaAs-based p-i-n photodiode (PD) chips and PD array chips are available as engineering samples and well suited for applications in 850 nm range optical data communicationssystems, optical interconnects, and general research and development. The PDs are available with a range ...
  • Diode Type: InGaAs
  • Wavelength Of Operation: 850 nm
Data Sheet
InGaAs PIN Photodiode PIN2000-17-D-T0-T2-C.
  • Diode Type: InGaAs
  • Wavelength Of Operation: 1700 nm
Data Sheet
InGaAs PIN Photodiode PIN1000-17-D-T0-T1-C.
  • Diode Type: InGaAs
  • Wavelength Of Operation: 1700 nm
Data Sheet
InGaAs PIN Photodiode PIN0500-17-D-T0.
  • Diode Type: InGaAs
  • Wavelength Of Operation: 1700 nm
Data Sheet
Cryogenic Detector INSB IS-0025
Electro-Optical Systems Inc
Cryogenic Detectors. 
  • Diode Type: InAsSbP
  • Wavelength Of Operation: 300-5000 nm
Data Sheet
TE Cooled Photodetector PBS–010-TE1
Electro-Optical Systems Inc
The TE cooled photodetector series consists of a high performance photoconductor mounted on a thermoelectric cooler, all housed in a TO-37 package. A thermistor is mounted to the TEC’s cold plate to provide a precise, reliable temperature monitor. Before operation VERIFY ELECTRICAL WIRING, else catastrophic damage may be sustained by ...
  • Diode Type: PbS
  • Wavelength Of Operation: 320-1060 nm
Data Sheet
TE Cooled Photodiode S-010-TE1
Electro-Optical Systems Inc
The TE cooled photodiode series consists of a high performance photodiode detector mounted on a thermoelectric cooler, all housed in a TO-37 or TO-8 package. A thermistor is mounted to the TEC’s cold plate to provide a precise, reliable temperature monitor. Before operation VERIFY ELECTRICAL WIRING, else catastrophic damage may be ...
  • Diode Type: Si, PbSe
  • Wavelength Of Operation: 320-1060 nm
Data Sheet
LM-Pbs DETECTOR
Eddy Co
LM-Pbs DETECTOR.
  • Diode Type: PbSe
  • Wavelength Of Operation: - nm
Data Sheet
Low Noise 400 kHz Photoreceiver With Si PIN Photodiode LCA-S-400K-SI
FEMTO Messtechnik GmbH
By combining state of the art photodiodes with the proven and outstanding FEMTO LCA Current Amplifier technology we designed a new family of photoreceivers with a remarkable performance. The LCA-S-400K is available with either a large area Si or InGaAs photodiode covering a spectral range from 400 to 1100 nm and 900 to 1700 nm, ...
  • Diode Type: Si
  • Wavelength Of Operation: 320-1060 nm
Data Sheet

Did You know?

The PIN photodiode was invented by Jun-ichi Nishizawa and his colleagues in 1950. It is a semiconductor device that operates as a variable resistor at RF and microwave frequencies and consists of an intrinsic (lightly doped) region that is sandwiched between a p-type and an n-type layer. PIN diode finds its application in RF switches, attenuators, photodetectors, and phase shifters. The RC time constant determines the frequency response of the PIN device. PIN photodiodes may have a broad spectral range from the near infrared to ultraviolet and even to high-energy regions. They are also known for their high-speed response, high sensitivity, and low noise.