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PIN Detectors

The Gentec-EO Photo Detector family includes nine photo detectors sensors. The PH100-Si, PH100Si-HA detectors use a silicon photodiode. The PH100-SiUV, PH10B-Si, PE10B-Si, PE3B-Si detectors also use a silicon photodiode but have enhanced sensitivity at shorter wavelengths. The PH20-Ge, PH5B-Ge, PE5B-Ge detectors use a germanium ...

Specifications

Diode Type: Ge
Wavelength Of Operation: 900 - 1650 nm
Data Sheet
The Gentec-EO Photo Detector family includes nine photo detectors sensors. The PH100-Si, PH100Si-HA detectors use a silicon photodiode. The PH100-SiUV, PH10B-Si, PE10B-Si, PE3B-Si detectors also use a silicon photodiode but have enhanced sensitivity at shorter wavelengths. The PH20-Ge, PH5B-Ge, PE5B-Ge detectors use a germanium ...

Specifications

Diode Type: Si
Wavelength Of Operation: 400 - 1080 nm
Data Sheet
The Gentec-EO Photo Detector family includes nine photo detectors sensors. The PH100-Si, PH100Si-HA detectors use a silicon photodiode. The PH100-SiUV, PH10B-Si, PE10B-Si, PE3B-Si detectors also use a silicon photodiode but have enhanced sensitivity at shorter wavelengths. The PH20-Ge, PH5B-Ge, PE5B-Ge detectors use a germanium ...

Specifications

Diode Type: Si
Wavelength Of Operation: 400 - 1080 nm
Data Sheet
2.4 – 5.5 µm, ambient temperature, optically immersed PVI-5-1×1-TO39-NW-36 is uncooled IR photovoltaic detector based on sophisticated HgCdTe heterostructure for the best performance and stability. The device is optimized for the maximum performance at λopt = 5 µm. Detector element is ...

Specifications

Diode Type: HgCdTe
Wavelength Of Operation: 5000 nm
Spectral Response: 2.4 – 5.5 µm 
Data Sheet
2.4 – 4.3 µm, ambient temperature, optically immersed PVI-2TE-4-1×1-TO8-wAl2O3-36 is two-stage thermoelectrically cooled IR photovoltaic detector based on sophisticated HgCdTe heterostructure for the best performance and stability. The device is optimized for the maximum performance at λopt = 4.0 ...

Specifications

Diode Type: HgCdTe
Wavelength Of Operation: 4000 nm
Spectral Response: 2.4 – 4.3 µm 
Data Sheet
2.0 – 3.4 µm, two-stage thermoelectrically cooled PVA-2TE-3-0.1×0.1-TO8-wAl2O3-70 is a two-stage thermoelectrically cooled IR photovoltaic detector based on InAs alloy. It does not contain mercury or cadmium and is complying with the RoHS Directive. 3° wedged sapphire (wAl2O3) window prevents unwanted ...

Specifications

Diode Type: Other
Wavelength Of Operation: 3000 nm
Spectral Response: 2.0 – 5.5 µm 
Data Sheet
2.0 – 12.0 µm HgCdTe ambient temperature photovoltaic multiple junction quadrant detectorPVMQ is uncooled IR photovoltaic multiple junction quadrant detector based on sophisticated HgCdTe heterostructures for the best performance and stability. Quadrant detector consists of four separate active elements arranged in a quadrant ...

Specifications

Diode Type: HgCdTe
Wavelength Of Operation: 10,600 nm
Spectral Range: 2.0 – 12.0 µm 
Data Sheet
1.0 – 14.0 µm, three-stage thermoelectrically cooled, optically immersed PCI-3TE-12-1×1-TO8-wZnSeAR-36 is a three-stage thermoelectrically cooled IR photoconductor, based on sophisticated HgCdTe heterostructure for the best performance and stability. The device is optimized for the maximum performance at λopt = 12 µm. ...

Specifications

Diode Type: HgCdTe
Wavelength Of Operation: 12000 nm
Spectral Range: 1 to 14 µm  
Data Sheet
The Gentec-EO Photo Detector family includes nine photo detectors sensors.The PH100-Si, PH100Si-HA detectors use a silicon photodiode. The PH100-SiUV, PH10B-Si, PE10B-Si, PE3B-Si detectors also use a silicon photodiode but have enhanced sensitivity at shorter wavelengths. The PH20-Ge, PH5B-Ge, PE5B-Ge detectors use a germanium ...

Specifications

Diode Type: Si
Wavelength Of Operation: 420 - 1080 nm
Data Sheet
The Gentec-EO Photo Detector family includes nine photo detectors sensors. The PH100-Si, PH100Si-HA detectors use a silicon photodiode. The PH100-SiUV, PH10B-Si, PE10B-Si, PE3B-Si detectors also use a silicon photodiode but have enhanced sensitivity at shorter wavelengths. The PH20-Ge, PH5B-Ge, PE5B-Ge detectors use a germanium ...

Specifications

Diode Type: Ge
Wavelength Of Operation: 950 - 1650 nm
Data Sheet
AP-35 PbS Detector For 1-3.1µm
AP Technologies Ltd
The A Series single channel infrared detectors integrates PbS technology with proven manufacturing processes to provide the highest sensitivity detectors across the spectral range from one to three microns. In addition, the product line minimizes maintenance costs and provides dependable operation with industry leading quality, ...

Specifications

Diode Type: PbS
Wavelength Of Operation: 1000 nm
Data Sheet
AP-25G PbS Detector For 1-3.1µm
AP Technologies Ltd
The A Series single channel infrared detectors integrates PbS technology with proven manufacturing processes to provide the highest sensitivity detectors across the spectral range from one to three microns. In addition, the product line minimizes maintenance costs and provides dependable operation with industry leading quality, ...

Specifications

Diode Type: PbS
Wavelength Of Operation: 1000 nm
Data Sheet
AP-15G PbS Detector For 1-3.1µm
AP Technologies Ltd
The A Series single channel infrared detectors integrates PbS technology with proven manufacturing processes to provide the highest sensitivity detectors across the spectral range from one to three microns. In addition, the product line minimizes maintenance costs and provides dependable operation with industry leading quality, ...

Specifications

Diode Type: PbS
Wavelength Of Operation: 1000 nm
Data Sheet
InGaAs PIN Photodiode PIN0500-17-D-TO
ANDANTA GmbH
InGaAs PIN Photodiodes.

Specifications

Diode Type: InGaAs
Wavelength Of Operation: 900 nm
Data Sheet
25 Gbit-s p-i-n Photodiode Chips And Photodiode Array Chips 850 nm
Connector Optics LLC
Our compact, top illuminated, low capacitance, high speed GaAs-based p-i-n photodiode (PD) chips and PD array chips are available as engineering samples and well suited for applications in 850 nm range optical data communicationssystems, optical interconnects, and general research and development. The PDs are available with a range ...

Specifications

Diode Type: InGaAs
Wavelength Of Operation: 850 nm
Data Sheet
InGaAs PIN Photodiode PIN2000-17-D-T0-T2-C.

Specifications

Diode Type: InGaAs
Wavelength Of Operation: 1700 nm
Data Sheet
InGaAs PIN Photodiode PIN1000-17-D-T0-T1-C.

Specifications

Diode Type: InGaAs
Wavelength Of Operation: 1700 nm
Data Sheet
InGaAs PIN Photodiode PIN0500-17-D-T0.

Specifications

Diode Type: InGaAs
Wavelength Of Operation: 1700 nm
Data Sheet
Cryogenic Detector INSB IS-0025
Electro-Optical Systems Inc
Cryogenic Detectors. 

Specifications

Diode Type: InAsSbP
Wavelength Of Operation: 300-5000 nm
Data Sheet
TE Cooled Photodetector PBS–010-TE1
Electro-Optical Systems Inc
The TE cooled photodetector series consists of a high performance photoconductor mounted on a thermoelectric cooler, all housed in a TO-37 package. A thermistor is mounted to the TEC’s cold plate to provide a precise, reliable temperature monitor. Before operation VERIFY ELECTRICAL WIRING, else catastrophic damage may be sustained by ...

Specifications

Diode Type: PbS
Wavelength Of Operation: 320-1060 nm
Data Sheet
TE Cooled Photodiode S-010-TE1
Electro-Optical Systems Inc
The TE cooled photodiode series consists of a high performance photodiode detector mounted on a thermoelectric cooler, all housed in a TO-37 or TO-8 package. A thermistor is mounted to the TEC’s cold plate to provide a precise, reliable temperature monitor. Before operation VERIFY ELECTRICAL WIRING, else catastrophic damage may be ...

Specifications

Diode Type: Si, PbSe
Wavelength Of Operation: 320-1060 nm
Data Sheet
LM-Pbs DETECTOR
Eddy Co
LM-Pbs DETECTOR.

Specifications

Diode Type: PbSe
Wavelength Of Operation: - nm
Data Sheet
Low Noise 400 kHz Photoreceiver With Si PIN Photodiode LCA-S-400K-SI
FEMTO Messtechnik GmbH
By combining state of the art photodiodes with the proven and outstanding FEMTO LCA Current Amplifier technology we designed a new family of photoreceivers with a remarkable performance. The LCA-S-400K is available with either a large area Si or InGaAs photodiode covering a spectral range from 400 to 1100 nm and 900 to 1700 nm, ...

Specifications

Diode Type: Si
Wavelength Of Operation: 320-1060 nm
Data Sheet
Ultra-Low Noise 2 kHz Photoreceiver With Si-PIN Photodiode PWPR-2K-SI
FEMTO Messtechnik GmbH
In addition to precise and fast cw-measurements the relatively large bandwidth from DC to 2 kHz also allows time-resolved and modulated measurements. Particularly the combination with lock-in amplifiers results in ultra-sensitive measurement systems being almost immune to disturbances from external sources. In this way the PWPR-2K ...

Specifications

Diode Type: Si
Wavelength Of Operation: 320-1060 nm
Data Sheet
Femtowatt Photoreceiver With Si Photodiode FWPR-20-SI
FEMTO Messtechnik GmbH
The series FWPR-20 photoreceivers combine low noise Si or InGaAs PIN photodiodes with a specially designed transimpedance amplifier with extremely high gain of up to 1012 V/A and very low noise. This unique combination results in a photoreceiver with Femtowatt sensitivity due to its exceptional low NEP of 0.7 fW/√Hz. Direct detection ...

Specifications

Diode Type: Si
Wavelength Of Operation: 320-1060 nm
Data Sheet

Did You know?

The PIN photodiode was invented by Jun-ichi Nishizawa and his colleagues in 1950. It is a semiconductor device that operates as a variable resistor at RF and microwave frequencies and consists of an intrinsic (lightly doped) region that is sandwiched between a p-type and an n-type layer. PIN diode finds its application in RF switches, attenuators, photodetectors, and phase shifters. The RC time constant determines the frequency response of the PIN device. PIN photodiodes may have a broad spectral range from the near infrared to ultraviolet and even to high-energy regions. They are also known for their high-speed response, high sensitivity, and low noise.