PIN Detectors

The Gentec PH100-SI-HA-OD1-D0 is a highly sensitive photodiode detector designed for precise laser power measurement, catering to power levels up to 300 mW. With exceptional noise reduction and a wide spectral range, this detector ensures accurate and reliable measurements for various laser applications. Its compact form factor and ...

Specifications

Diode Type: Si
Wavelength Of Operation: 420 - 1080 nm
Max Frequency Response: Other / Not specified
Active Area Size: Custom Size
Dark Current: < 1 nA, 1-10 nA, 10-100 nA, > 100 nA
...
Data Sheet
The Gentec PH20-GE-OD2-D0 is a precision photodiode detector engineered for accurate laser power measurement, capable of handling power levels up to 500 mW. With exceptional sensitivity and a broad spectral range, this detector provides reliable and traceable calibration for critical applications in research, industrial settings, and ...

Specifications

Diode Type: Ge
Wavelength Of Operation: 950 - 1650 nm
Max Frequency Response: Other / Not specified
Active Area Size: Custom Size
Dark Current: < 1 nA, 1-10 nA, 10-100 nA, > 100 nA
...
Data Sheet
ROF-PR-200M series photodetector integrates high-speed PIN detector and low noise amplifier, fiber or free space coupling, SMA connector output, with high gain, high sensitivity, gain flat and other characteristics, mainly used for analog optical signal reception and fiber optic sensing systems. Beijing Rofea Optoelectronics Co., ...

Specifications

Diode Type: InGaAs
Wavelength Of Operation: 850-1650 nm
Max Frequency Response: Other / Not specified
Active Area Size: Custom Size
Dark Current: 10-100 nA
...
Data Sheet
The PH100-SI-HA-OD2-D0 is a high-quality photodiode detector designed for laser power measurement up to 750 mW. It offers accurate and reliable power measurement capabilities with a large aperture of 10 mm Ø for the silicon sensors. With three different versions available, including Silicon 350-1080 nm (up to 750 mW), ...

Specifications

Diode Type: Si
Wavelength Of Operation: 630-1080 nm
Maximum Average Power: 750 mW
Noise Equivalent Power: 2 nW
Typical Rise Time: 0.2 s
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Data Sheet
Introducing the RZPD-200M-AC, a high-performing InGaAsPIN balancing detector that offers both low noise and high bandwidth for ultra-sensitive detection applications. This detector is designed with two balanced photodiodes and an ultra-low noise high-speed amplification circuit, along with a noise floor power supply, to ensure ...

Specifications

Diode Type: InGaAs
Wavelength Of Operation: 1550 nm
Operating Temperature: -40 to +85 degC
Storage Temperature: -55 t +100 degC
Saturation Input Optical Power: 150 uW
...
Data Sheet
RPD3000-SA-xx-H-B Photo-detector for Optical Networking Applications
Applied Optoelectronics Inc
The RPD3000-SA-xx-H-B series of Photodetector is a receptacle package designed for high-performance optical networking applications. These devices have low capacitance, high linearity, a wide operating temperature range, and excellent frequency response up to 3000MHz.   They have high responsivity and can be used in a ...

Specifications

Diode Type: Other
Wavelength Of Operation: 1650 nm
Active Diameter: 40-80 um
Frequency Bandwidth: 3000 MHz
Frequency Response: +/- 0.5 dB
...
Data Sheet
MRPD3000-SC-xx Photo Detector for Optical Network Applications
Applied Optoelectronics Inc
The MRPD3000-SC-xx series of photo detectors are low-cost components designed for high-performance optical network applications. These devices have low capacitance, a wide operating temperature range, and high responsivity.    The MRPD3000-SC-xx features a robust metal housing and a metal SC receptacle that make it ...

Specifications

Diode Type: Other
Wavelength Of Operation: 1600 nm
Operating Case Temperature: -40+85 °C
Storage Temperature: -40+100 °C
Saturation Input Power: 10 mW
...
Data Sheet
PD3000-xx-xx-H-B Photodetectors
Applied Optoelectronics Inc
The PD3000-xx-xx-H-B series of photodetectors are low-cost components that are well suited for high-performance optical network applications. The devices feature low capacitance, high linearity, frequency response up to 3000MHz, a wide operating temperature range, and high responsivity.   The PD3000 is designed for use ...

Specifications

Diode Type: Other
Wavelength Of Operation: 1650 nm
Frequency Bandwidth: 300 MHz
Frequency Response: +/- 0.5 dB
Back Reflection: -45 dB
...
Data Sheet
PD1000-xx-xx-H-B Photodetectors for High-Performance Optical Network Applications
Applied Optoelectronics Inc
The PD1000-xx-xx-H-B series of photodetectors are low-cost components designed for high-performance optical network applications. They offer high linearity, low capacitance, high responsivity, frequency response up to 1000MHz, and a wide operating temperature range.

Specifications

Diode Type: Other
Wavelength Of Operation: 1650 nm
Active Diamete: 40-80 um
Frequency Bandwidth: 1-1000 MHz
Frequency Response: ±0.5 dB
...
Data Sheet
The Gentec-EO Photo Detector family includes nine photo detectors sensors. The PH100-Si, PH100Si-HA detectors use a silicon photodiode. The PH100-SiUV, PH10B-Si, PE10B-Si, PE3B-Si detectors also use a silicon photodiode but have enhanced sensitivity at shorter wavelengths. The PH20-Ge, PH5B-Ge, PE5B-Ge detectors use a germanium ...

Specifications

Diode Type: Si
Wavelength Of Operation: 630 - 1080 nm
Data Sheet
The Gentec-EO Photo Detector family includes nine photo detectors sensors. The PH100-Si, PH100Si-HA detectors use a silicon photodiode. The PH100-SiUV, PH10B-Si, PE10B-Si, PE3B-Si detectors also use a silicon photodiode but have enhanced sensitivity at shorter wavelengths.   The PH20-Ge, PH5B-Ge, PE5B-Ge detectors ...

Specifications

Diode Type: Si
Wavelength Of Operation: 420 - 1080 nm
Data Sheet
High Speed InGaAs PIN Photodiode FD80W
Fermionics
High-speed, low dark current, low capacitance photodiode for high-speed communication systems. The photosensitive area is 80 microns in diameter. Planar-passivated device structure.

Specifications

Diode Type: InGaAs
Wavelength Of Operation: 1300 nm
Storage Temperature: -40 - +100 °C
Responsivity: 0.85 A/W
Forward Current: 5 mA
...
Data Sheet
The Gentec-EO Photo Detector family includes nine photo detectors sensors. The PH100-Si, PH100Si-HA detectors use a silicon photodiode. The PH100-SiUV, PH10B-Si, PE10B-Si, PE3B-Si detectors also use a silicon photodiode but have enhanced sensitivity at shorter wavelengths. The PH20-Ge, PH5B-Ge, PE5B-Ge detectors use a germanium ...

Specifications

Diode Type: Si
Wavelength Of Operation: 400 - 1080 nm
Data Sheet
The Gentec-EO Photo Detector family includes nine photo detectors sensors. The PH100-Si, PH100Si-HA detectors use a silicon photodiode. The PH100-SiUV, PH10B-Si, PE10B-Si, PE3B-Si detectors also use a silicon photodiode but have enhanced sensitivity at shorter wavelengths. The PH20-Ge, PH5B-Ge, PE5B-Ge detectors use a germanium ...

Specifications

Diode Type: Si
Wavelength Of Operation: 400 - 1080 nm
Data Sheet
The Gentec-EO Photo Detector family includes nine photo detectors sensors. The PH100-Si, PH100Si-HA detectors use a silicon photodiode. The PH100-SiUV, PH10B-Si, PE10B-Si, PE3B-Si detectors also use a silicon photodiode but have enhanced sensitivity at shorter wavelengths. The PH20-Ge, PH5B-Ge, PE5B-Ge detectors use a germanium ...

Specifications

Diode Type: Ge
Wavelength Of Operation: 900 - 1650 nm
Data Sheet
2.4 – 5.5 µm, ambient temperature, optically immersed PVI-5-1×1-TO39-NW-36 is uncooled IR photovoltaic detector based on sophisticated HgCdTe heterostructure for the best performance and stability. The device is optimized for the maximum performance at λopt = 5 µm. Detector element is ...

Specifications

Diode Type: HgCdTe
Wavelength Of Operation: 5000 nm
Spectral Response: 2.4 – 5.5 µm
Data Sheet
2.4 – 4.3 µm, ambient temperature, optically immersed PVI-2TE-4-1×1-TO8-wAl2O3-36 is two-stage thermoelectrically cooled IR photovoltaic detector based on sophisticated HgCdTe heterostructure for the best performance and stability. The device is optimized for the maximum performance at λopt = 4.0 ...

Specifications

Diode Type: HgCdTe
Wavelength Of Operation: 4000 nm
Spectral Response: 2.4 – 4.3 µm
Data Sheet
2.0 – 3.4 µm, two-stage thermoelectrically cooled PVA-2TE-3-0.1×0.1-TO8-wAl2O3-70 is a two-stage thermoelectrically cooled IR photovoltaic detector based on InAs alloy. It does not contain mercury or cadmium and is complying with the RoHS Directive. 3° wedged sapphire (wAl2O3) window prevents unwanted ...

Specifications

Diode Type: Other
Wavelength Of Operation: 3000 nm
Spectral Response: 2.0 – 5.5 µm
Data Sheet
2.0 – 12.0 µm HgCdTe ambient temperature photovoltaic multiple junction quadrant detectorPVMQ is uncooled IR photovoltaic multiple junction quadrant detector based on sophisticated HgCdTe heterostructures for the best performance and stability. Quadrant detector consists of four separate active elements arranged in a quadrant ...

Specifications

Diode Type: HgCdTe
Wavelength Of Operation: 10,600 nm
Spectral Range: 2.0 – 12.0 µm
Data Sheet
1.0 – 14.0 µm, three-stage thermoelectrically cooled, optically immersed PCI-3TE-12-1×1-TO8-wZnSeAR-36 is a three-stage thermoelectrically cooled IR photoconductor, based on sophisticated HgCdTe heterostructure for the best performance and stability. The device is optimized for the maximum performance at λopt = 12 µm. ...

Specifications

Diode Type: HgCdTe
Wavelength Of Operation: 12000 nm
Spectral Range: 1 to 14 µm
Data Sheet
AP-35 PbS Detector For 1-3.1µm
AP Technologies Ltd
The A Series single channel infrared detectors integrates PbS technology with proven manufacturing processes to provide the highest sensitivity detectors across the spectral range from one to three microns. In addition, the product line minimizes maintenance costs and provides dependable operation with industry leading quality, ...

Specifications

Diode Type: PbS
Wavelength Of Operation: 1000 nm
Data Sheet
AP-25G PbS Detector For 1-3.1µm
AP Technologies Ltd
The A Series single channel infrared detectors integrates PbS technology with proven manufacturing processes to provide the highest sensitivity detectors across the spectral range from one to three microns. In addition, the product line minimizes maintenance costs and provides dependable operation with industry leading quality, ...

Specifications

Diode Type: PbS
Wavelength Of Operation: 1000 nm
Data Sheet
AP-15G PbS Detector For 1-3.1µm
AP Technologies Ltd
The A Series single channel infrared detectors integrates PbS technology with proven manufacturing processes to provide the highest sensitivity detectors across the spectral range from one to three microns. In addition, the product line minimizes maintenance costs and provides dependable operation with industry leading quality, ...

Specifications

Diode Type: PbS
Wavelength Of Operation: 1000 nm
Data Sheet
InGaAs PIN Photodiode PIN0500-17-D-TO
ANDANTA GmbH
InGaAs PIN Photodiodes.

Specifications

Diode Type: InGaAs
Wavelength Of Operation: 900 nm
Data Sheet
25 Gbit-s p-i-n Photodiode Chips And Photodiode Array Chips 850 nm
Connector Optics LLC
Our compact, top illuminated, low capacitance, high speed GaAs-based p-i-n photodiode (PD) chips and PD array chips are available as engineering samples and well suited for applications in 850 nm range optical data communicationssystems, optical interconnects, and general research and development. The PDs are available with a range ...

Specifications

Diode Type: InGaAs
Wavelength Of Operation: 850 nm
Data Sheet

Frequently Asked Questions

PIN Detectors are photodetectors that consist of a p-type region, an intrinsic (undoped) region, and an n-type region. They are widely used for detecting and measuring optical power or intensity across a broad range of wavelengths, from ultraviolet (UV) to infrared (IR).

PIN Detectors work by absorbing photons of light in the intrinsic region, creating electron-hole pairs. An electric field causes the electrons to move toward the n-type layer and holes toward the p-type layer, generating an electric current proportional to the light intensity.

PIN Detectors offer high responsivity, low noise, and wide bandwidth, making them suitable for applications requiring accurate and fast optical power measurements. They have excellent linearity, low capacitance, and are often used in telecommunications, spectroscopy, and scientific research.

PIN Detectors cover a wide range of wavelengths, typically from UV to IR. However, the specific wavelength range depends on the materials and design of the detector. When selecting a PIN Detector, ensure that it matches the desired wavelength range for your application.

When choosing a PIN Detector, consider factors such as wavelength range, responsivity, dark current, bandwidth, and package type. Determine your specific application requirements, such as the desired sensitivity and speed, to select the PIN Detector that best suits your needs.

The common types of PIN Detectors are Silicon PIN detectors, which are sensitive to visible and near-infrared light, InGaAs PIN detectors for longer wavelengths (800-1700 nm), and Germanium PIN detectors which are sensitive to wavelengths between around 800-1800 nm.

PIN Detectors are widely used in telecommunications for fiber-optic communication systems, data communication networks, sensing and measurement applications such as LIDAR systems, and medical imaging devices including CT scanners.

Silicon PIN Detectors are sensitive to wavelengths in the visible and near-infrared spectrum (around 400-1100 nm), while InGaAs PIN Detectors are used for longer wavelengths, typically in the range of 800-1700 nm, making them ideal for fiber-optic communication systems.

When selecting a PIN Detector, consider the wavelength sensitivity, speed requirements, noise characteristics, power requirements, and compatibility with your system. It's also important to evaluate whether the detector meets the specific requirements of your application.

PIN Detectors: An In-Depth Analysis

PIN detectors, also known as PIN photodiodes, are essential tools in the realm of optoelectronics. They are widely used for converting light into electrical signals. This comprehensive guide offers insights into the working principles, types, applications, and considerations of PIN detectors.

Introduction to PIN Detectors

PIN detectors are a type of photodetector that stands for P-type, Intrinsic, N-type. These detectors are utilized to convert light into current or voltage through the photoelectric effect. They are known for their ability to operate at high frequencies, making them particularly suited for applications in telecommunications, data communication, and high-speed light detection.

Working Principle of PIN Detectors

PIN detectors consist of a p-type and n-type semiconductor separated by an intrinsic (undoped) semiconductor layer. When photons of light hit the intrinsic region of the detector, electron-hole pairs are generated. The presence of an electric field causes the electrons to move toward the n-type layer and the holes toward the p-type layer, generating an electric current proportional to the light intensity.

Types of PIN Detectors

Silicon PIN Detectors: Silicon PIN detectors are sensitive to wavelengths in the visible and near-infrared spectrum (around 400 to 1100 nm). They are widely used in applications requiring detection in this wavelength range.

InGaAs PIN Detectors: Indium Gallium Arsenide (InGaAs) PIN detectors are used for longer wavelengths, typically in the range of 800 to 1700 nm. These are commonly used in fiber optic communication systems.

Germanium PIN Detectors: Germanium-based PIN detectors are sensitive to wavelengths between around 800 to 1800 nm. They are less common than InGaAs detectors but are still used in certain specialized applications.

Applications of PIN Detectors

Telecommunications: In the field of telecommunications, PIN detectors are integral components in fiber-optic communication systems. They are used to convert optical signals back into electrical signals at the receiving end.

Data Communication: PIN detectors are also used in data communication networks, such as Ethernet, where high-speed data is transmitted over optical fibers.

Sensing and Measurement: In sensing applications, PIN detectors can be used to measure light levels, for instance in LIDAR systems for distance measurement or in spectrometers for analyzing light spectra.

Medical Imaging: In medical imaging, PIN detectors are used to detect light in devices such as computed tomography (CT) scanners and certain types of X-ray equipment.

Considerations When Choosing a PIN Detector

When selecting a PIN detector for a specific application, it is important to consider:

  • Wavelength Sensitivity: Ensure that the detector is sensitive to the wavelength range of interest.
  • Speed Requirements: If your application requires high-speed detection, choose a detector that can operate at the required frequencies.
  • Noise Characteristics: Low noise levels are crucial for applications requiring high sensitivity.
  • Power Requirements: Consider the power requirements of the detector and ensure it is compatible with your system.

  
Conclusion

PIN detectors are versatile and high-performance devices that play a critical role in a wide range of applications involving light detection and measurement. Understanding the working principles, types, and applications of PIN detectors is essential for selecting the appropriate device for your specific needs. Whether it is telecommunications, data communications, sensing, or medical imaging, PIN detectors prove to be invaluable assets in the field of optoelectronics.

Did You know?

The revolutionary PIN photodiode, a cornerstone in the optoelectronics industry, was ingeniously developed by Jun-ichi Nishizawa and his brilliant team back in 1950. This semiconductor marvel is notably comprised of an intrinsic region, which is lightly doped, flanked by a p-type layer on one side and an n-type layer on the other. What’s particularly captivating about the PIN diode is its dual functionality - it not only operates as a dynamic, variable resistor at radio frequencies (RF) and microwaves but also astoundingly converts light into electrical signals. With a myriad of applications, the PIN diode is an unsung hero in RF switches, attenuators, photodetectors, and phase shifters. Its performance is critically governed by the RC time constant, which is instrumental in determining the frequency response of the PIN device. Diving into the spectrum sensitivity, PIN photodiodes showcase an impressively broad spectral range, encompassing the near-infrared through ultraviolet, and astonishingly extending into high-energy regions. This makes them immeasurably valuable across various industries including telecommunications, medical imaging, and scientific research. What sets the PIN photodiode apart is its trifecta of high-speed response, high sensitivity, and low noise. This combination makes it an unparalleled choice for applications that demand rapid and accurate detection of light.