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PIN Detectors

RPD3000-SA-xx-H-B Photo-detector for Optical Networking Applications
Applied Optoelectronics Inc
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RPD3000-SA-xx-H-B Photo-detector for Optical Networking Applications
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The RPD3000-SA-xx-H-B series of Photodetector is a receptacle package designed for high-performance optical networking applications. These devices have low capacitance, high linearity, a wide operating temperature range, and excellent frequency response up to 3000MHz.   They have high responsivity and can be used in a ...

Specifications
Diode Type: Other
Wavelength Of Operation: 1650 nm
Active Diameter: 40-80 um
Frequency Bandwidth: 3000 MHz
Frequency Response: +/- 0.5 dB
...
Data Sheet
MRPD3000-SC-xx Photo Detector for Optical Network Applications
Applied Optoelectronics Inc
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MRPD3000-SC-xx Photo Detector for Optical Network Applications
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The MRPD3000-SC-xx series of photo detectors are low-cost components designed for high-performance optical network applications. These devices have low capacitance, a wide operating temperature range, and high responsivity.    The MRPD3000-SC-xx features a robust metal housing and a metal SC receptacle that make it ...

Specifications
Diode Type: Other
Wavelength Of Operation: 1600 nm
Operating Case Temperature: -40+85 °C
Storage Temperature: -40+100 °C
Saturation Input Power: 10 mW
...
Data Sheet
PD3000-xx-xx-H-B Photodetectors
Applied Optoelectronics Inc
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PD3000-xx-xx-H-B Photodetectors
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The PD3000-xx-xx-H-B series of photodetectors are low-cost components that are well suited for high-performance optical network applications. The devices feature low capacitance, high linearity, frequency response up to 3000MHz, a wide operating temperature range, and high responsivity.   The PD3000 is designed for use ...

Specifications
Diode Type: Other
Wavelength Of Operation: 1650 nm
Frequency Bandwidth: 300 MHz
Frequency Response: +/- 0.5 dB
Back Reflection: -45 dB
...
Data Sheet
PD1000-xx-xx-H-B Photodetectors for High-Performance Optical Network Applications
Applied Optoelectronics Inc
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PD1000-xx-xx-H-B Photodetectors for High-Performance Optical Network Applications
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The PD1000-xx-xx-H-B series of photodetectors are low-cost components designed for high-performance optical network applications. They offer high linearity, low capacitance, high responsivity, frequency response up to 1000MHz, and a wide operating temperature range.

Specifications
Diode Type: Other
Wavelength Of Operation: 1650 nm
Active Diamete: 40-80 um
Frequency Bandwidth: 1-1000 MHz
Frequency Response: ±0.5 dB
...
Data Sheet
InGaAsPIN Balance Detector
CSRayzer Optical Technology
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InGaAsPIN Balance Detector
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Introducing the RZPD-200M-AC, a high-performing InGaAsPIN balancing detector that offers both low noise and high bandwidth for ultra-sensitive detection applications. This detector is designed with two balanced photodiodes and an ultra-low noise high-speed amplification circuit, along with a noise floor power supply, to ensure ...

Specifications
Diode Type: InGaAs
Wavelength Of Operation: 1550 nm
Operating Temperature: -40 to +85 degC
Storage Temperature: -55 t +100 degC
Saturation Input Optical Power: 150 uW
...
Data Sheet
Gentec-EO High Power Detector PH100-SI-HA-OD2-D0
Gentec-EO
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Gentec-EO High Power Detector PH100-SI-HA-OD2-D0
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The Gentec-EO Photo Detector family includes nine photo detectors sensors. The PH100-Si, PH100Si-HA detectors use a silicon photodiode. The PH100-SiUV, PH10B-Si, PE10B-Si, PE3B-Si detectors also use a silicon photodiode but have enhanced sensitivity at shorter wavelengths. The PH20-Ge, PH5B-Ge, PE5B-Ge detectors use a germanium ...

Specifications
Diode Type: Si
Wavelength Of Operation: 630 - 1080 nm
Data Sheet
Gentec-EO High Power Detector PH100-SI-HA-OD1-D0
Gentec-EO
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Gentec-EO High Power Detector PH100-SI-HA-OD1-D0
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The Gentec-EO Photo Detector family includes nine photo detectors sensors. The PH100-Si, PH100Si-HA detectors use a silicon photodiode. The PH100-SiUV, PH10B-Si, PE10B-Si, PE3B-Si detectors also use a silicon photodiode but have enhanced sensitivity at shorter wavelengths.   The PH20-Ge, PH5B-Ge, PE5B-Ge detectors ...

Specifications
Diode Type: Si
Wavelength Of Operation: 420 - 1080 nm
Data Sheet
High Speed InGaAs PIN Photodiode FD80W
Fermionics
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High Speed InGaAs PIN Photodiode FD80W
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High-speed, low dark current, low capacitance photodiode for high-speed communication systems. The photosensitive area is 80 microns in diameter. Planar-passivated device structure.

Specifications
Diode Type: InGaAs
Wavelength Of Operation: 1300 nm
Storage Temperature: -40 - +100 °C
Responsivity: 0.85 A/W
Forward Current: 5 mA
...
Data Sheet
Gentec-EO Photodiode Detector PH20-GE-OD1-D0
Gentec-EO
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Gentec-EO Photodiode Detector PH20-GE-OD1-D0
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The Gentec-EO Photo Detector family includes nine photo detectors sensors. The PH100-Si, PH100Si-HA detectors use a silicon photodiode. The PH100-SiUV, PH10B-Si, PE10B-Si, PE3B-Si detectors also use a silicon photodiode but have enhanced sensitivity at shorter wavelengths. The PH20-Ge, PH5B-Ge, PE5B-Ge detectors use a germanium ...

Specifications
Diode Type: Ge
Wavelength Of Operation: 900 - 1650 nm
Data Sheet
Gentec-EO Photodiode Detector PH100-SIUV-OD1-D0
Gentec-EO
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Gentec-EO Photodiode Detector PH100-SIUV-OD1-D0
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The Gentec-EO Photo Detector family includes nine photo detectors sensors. The PH100-Si, PH100Si-HA detectors use a silicon photodiode. The PH100-SiUV, PH10B-Si, PE10B-Si, PE3B-Si detectors also use a silicon photodiode but have enhanced sensitivity at shorter wavelengths. The PH20-Ge, PH5B-Ge, PE5B-Ge detectors use a germanium ...

Specifications
Diode Type: Si
Wavelength Of Operation: 400 - 1080 nm
Data Sheet
Gentec-EO Photodiode Detector PH100-SIUV-OD.3-D0
Gentec-EO
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Gentec-EO Photodiode Detector PH100-SIUV-OD.3-D0
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The Gentec-EO Photo Detector family includes nine photo detectors sensors. The PH100-Si, PH100Si-HA detectors use a silicon photodiode. The PH100-SiUV, PH10B-Si, PE10B-Si, PE3B-Si detectors also use a silicon photodiode but have enhanced sensitivity at shorter wavelengths. The PH20-Ge, PH5B-Ge, PE5B-Ge detectors use a germanium ...

Specifications
Diode Type: Si
Wavelength Of Operation: 400 - 1080 nm
Data Sheet
HgCdTe (MCT) Photovoltaic Detector (uncooled)
VIGO Photonics
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HgCdTe (MCT) Photovoltaic Detector (uncooled)
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2.4 – 5.5 µm, ambient temperature, optically immersed PVI-5-1×1-TO39-NW-36 is uncooled IR photovoltaic detector based on sophisticated HgCdTe heterostructure for the best performance and stability. The device is optimized for the maximum performance at λopt = 5 µm. Detector element is ...

Specifications
Diode Type: HgCdTe
Wavelength Of Operation: 5000 nm
Spectral Response: 2.4 – 5.5 µm 
Data Sheet
HgCdTe (MCT) Photovoltaic Detector
VIGO Photonics
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HgCdTe (MCT) Photovoltaic Detector
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2.4 – 4.3 µm, ambient temperature, optically immersed PVI-2TE-4-1×1-TO8-wAl2O3-36 is two-stage thermoelectrically cooled IR photovoltaic detector based on sophisticated HgCdTe heterostructure for the best performance and stability. The device is optimized for the maximum performance at λopt = 4.0 ...

Specifications
Diode Type: HgCdTe
Wavelength Of Operation: 4000 nm
Spectral Response: 2.4 – 4.3 µm 
Data Sheet
InAs Photovoltaic Detector
VIGO Photonics
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InAs Photovoltaic Detector
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2.0 – 3.4 µm, two-stage thermoelectrically cooled PVA-2TE-3-0.1×0.1-TO8-wAl2O3-70 is a two-stage thermoelectrically cooled IR photovoltaic detector based on InAs alloy. It does not contain mercury or cadmium and is complying with the RoHS Directive. 3° wedged sapphire (wAl2O3) window prevents unwanted ...

Specifications
Diode Type: Other
Wavelength Of Operation: 3000 nm
Spectral Response: 2.0 – 5.5 µm 
Data Sheet
HgCdTe (MCT) Multi Channel Detectors
VIGO Photonics
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HgCdTe (MCT) Multi Channel Detectors
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2.0 – 12.0 µm HgCdTe ambient temperature photovoltaic multiple junction quadrant detectorPVMQ is uncooled IR photovoltaic multiple junction quadrant detector based on sophisticated HgCdTe heterostructures for the best performance and stability. Quadrant detector consists of four separate active elements arranged in a quadrant ...

Specifications
Diode Type: HgCdTe
Wavelength Of Operation: 10,600 nm
Spectral Range: 2.0 – 12.0 µm 
Data Sheet
HgCdTe (MCT) Photoconductive Detector
VIGO Photonics
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HgCdTe (MCT) Photoconductive Detector
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1.0 – 14.0 µm, three-stage thermoelectrically cooled, optically immersed PCI-3TE-12-1×1-TO8-wZnSeAR-36 is a three-stage thermoelectrically cooled IR photoconductor, based on sophisticated HgCdTe heterostructure for the best performance and stability. The device is optimized for the maximum performance at λopt = 12 µm. ...

Specifications
Diode Type: HgCdTe
Wavelength Of Operation: 12000 nm
Spectral Range: 1 to 14 µm  
Data Sheet
Gentec-EO Photodiode Detector PH100-SI-HA-OD1-D0
Gentec-EO
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Gentec-EO Photodiode Detector PH100-SI-HA-OD1-D0
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The Gentec-EO Photo Detector family includes nine photo detectors sensors.The PH100-Si, PH100Si-HA detectors use a silicon photodiode. The PH100-SiUV, PH10B-Si, PE10B-Si, PE3B-Si detectors also use a silicon photodiode but have enhanced sensitivity at shorter wavelengths. The PH20-Ge, PH5B-Ge, PE5B-Ge detectors use a germanium ...

Specifications
Diode Type: Si
Wavelength Of Operation: 420 - 1080 nm
Data Sheet
Gentec-EO Photodiode Detector PH20-GE-OD2-D0
Gentec-EO
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Gentec-EO Photodiode Detector PH20-GE-OD2-D0
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The Gentec-EO Photo Detector family includes nine photo detectors sensors. The PH100-Si, PH100Si-HA detectors use a silicon photodiode. The PH100-SiUV, PH10B-Si, PE10B-Si, PE3B-Si detectors also use a silicon photodiode but have enhanced sensitivity at shorter wavelengths. The PH20-Ge, PH5B-Ge, PE5B-Ge detectors use a germanium ...

Specifications
Diode Type: Ge
Wavelength Of Operation: 950 - 1650 nm
Data Sheet
AP-35 PbS Detector For 1-3.1µm
AP Technologies Ltd
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AP-35 PbS Detector For 1-3.1µm
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The A Series single channel infrared detectors integrates PbS technology with proven manufacturing processes to provide the highest sensitivity detectors across the spectral range from one to three microns. In addition, the product line minimizes maintenance costs and provides dependable operation with industry leading quality, ...

Specifications
Diode Type: PbS
Wavelength Of Operation: 1000 nm
Data Sheet
AP-25G PbS Detector For 1-3.1µm
AP Technologies Ltd
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AP-25G PbS Detector For 1-3.1µm
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The A Series single channel infrared detectors integrates PbS technology with proven manufacturing processes to provide the highest sensitivity detectors across the spectral range from one to three microns. In addition, the product line minimizes maintenance costs and provides dependable operation with industry leading quality, ...

Specifications
Diode Type: PbS
Wavelength Of Operation: 1000 nm
Data Sheet
AP-15G PbS Detector For 1-3.1µm
AP Technologies Ltd
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AP-15G PbS Detector For 1-3.1µm
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The A Series single channel infrared detectors integrates PbS technology with proven manufacturing processes to provide the highest sensitivity detectors across the spectral range from one to three microns. In addition, the product line minimizes maintenance costs and provides dependable operation with industry leading quality, ...

Specifications
Diode Type: PbS
Wavelength Of Operation: 1000 nm
Data Sheet
InGaAs PIN Photodiode PIN0500-17-D-TO
ANDANTA GmbH
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InGaAs PIN Photodiode PIN0500-17-D-TO
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InGaAs PIN Photodiodes.

Specifications
Diode Type: InGaAs
Wavelength Of Operation: 900 nm
Data Sheet
25 Gbit-s p-i-n Photodiode Chips And Photodiode Array Chips 850 nm
Connector Optics LLC
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25 Gbit-s p-i-n Photodiode Chips And Photodiode Array Chips 850 nm
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Our compact, top illuminated, low capacitance, high speed GaAs-based p-i-n photodiode (PD) chips and PD array chips are available as engineering samples and well suited for applications in 850 nm range optical data communicationssystems, optical interconnects, and general research and development. The PDs are available with a range ...

Specifications
Diode Type: InGaAs
Wavelength Of Operation: 850 nm
Data Sheet
InGaAs PIN Photodiode PIN2000-17-D-T0-T2-C
Chunghwa Leading Photonics Tech Co Ltd
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InGaAs PIN Photodiode PIN2000-17-D-T0-T2-C
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InGaAs PIN Photodiode PIN2000-17-D-T0-T2-C.

Specifications
Diode Type: InGaAs
Wavelength Of Operation: 1700 nm
Data Sheet
InGaAs PIN Photodiode PIN1000-17-D-T0-T1-C
Chunghwa Leading Photonics Tech Co Ltd
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InGaAs PIN Photodiode PIN1000-17-D-T0-T1-C
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InGaAs PIN Photodiode PIN1000-17-D-T0-T1-C.

Specifications
Diode Type: InGaAs
Wavelength Of Operation: 1700 nm
Data Sheet
There are 91 different PIN Detectors from suppliers and manufacturers listed in this category. In just a few clicks you can compare different PIN Detectors with each other and get an accurate quote based on your needs and specifications. Please note that the prices of PIN Detectors vary significantly for different products based on various factors including technical parameters, features, brand name, etc. Please contact suppliers directly to inquire about the details and accurate pricing information for any product model. Simply navigate to the product page of interest and use the orange button to directly reach out to the respective supplier with one click.

Did You know?

The PIN photodiode was invented by Jun-ichi Nishizawa and his colleagues in 1950. It is a semiconductor device that operates as a variable resistor at RF and microwave frequencies and consists of an intrinsic (lightly doped) region that is sandwiched between a p-type and an n-type layer. PIN diode finds its application in RF switches, attenuators, photodetectors, and phase shifters. The RC time constant determines the frequency response of the PIN device. PIN photodiodes may have a broad spectral range from the near infrared to ultraviolet and even to high-energy regions. They are also known for their high-speed response, high sensitivity, and low noise.
External links:
1 - PIN Diodes
2 - Intro to Photodetectors
3 - On PiN Photodiodes