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FP1-850K Photodetectors
Inject Enterprise
A photodiode of the type FP1-850K with a spectral sensitivity range of 810-870 nm with the introduction of radiation into the body through a multimode fiber with a core diameter 50 μm. It is made on the basis of a silicon pin photodiode   for use in fiber-optic communication systems, gyroscopes, measuring equipment and other ...
  • Diode Type: Si
  • Wavelength Of Operation: 810 nm
Data Sheet
Large Area InGaAs PIN Photodiodes FD3000W
Fermionics
Large area, high sensitivity photodiode for use in infrared instrumentation and sensing applications. High spectral response in the region 800 nm to 1700 nm. The photosensitive area is 3 mm in diameter. Planar-passivated device structure.
  • Diode Type: InGaAs
  • Wavelength Of Operation: 1300 nm
Data Sheet
Large Area InGaAs PIN Photodiodes FD2000W
Fermionics
Large area, high sensitivity photodiode for use in infrared instrumentation and sensing applications. High spectral response in the region 800 nm to 1700 nm. High shunt resistance allows high sensitivity to low level optical signals. The photosensitive area is 2 mm in diameter. Planar-passivated device structure.
  • Diode Type: InGaAs
  • Wavelength Of Operation: 1300 nm
Data Sheet
Large Area InGaAs PIN Photodiodes FD1500W
Fermionics
Large area, high sensitivity photodiode for use in infrared instrumentation and sensing applications. High spectral response in the region 800 nm to 1700 nm. The photosensitive area is 1.5 mm in diameter. Planar-passivated device structure.
  • Diode Type: InGaAs
  • Wavelength Of Operation: 850 nm
Data Sheet
Large Area InGaAs PIN Photodiodes FD1000W
Fermionics
Large area, high sensitivity photodiode for use in infrared instrumentation and sensing applications. High spectral response in the region 800 nm to 1700 nm. The photosensitive area is 1 mm in diameter. Planar-passivated device structure.
  • Diode Type: InGaAs
  • Wavelength Of Operation: 850 nm
Data Sheet
High Speed InGaAs PIN Photodiodes FD500 Series
Fermionics
General purpose InGaAs PIN photodiodes useful for a wide range of applications including infrared instrumentation and moderate speed communication systems. The photosensitive area is 500 microns in diameter.
  • Diode Type: InGaAs
  • Wavelength Of Operation: 1300 nm
Data Sheet
High Speed InGaAs PIN Photodiodes FD300 Series
Fermionics
General purpose InGaAs PIN photodiodes useful for a wide range of applications including infrared instrumentation and moderate speed communication systems. The photosensitive area is 300 microns in diameter.
  • Diode Type: InGaAs
  • Wavelength Of Operation: 1300 nm
Data Sheet
High Speed InGaAs PIN Photodiodes FD150 Series
Fermionics
High-speed, low dark current, low capacitance photodiode for high speed communication systems, LANs, and FDDI applications. The 150 micron diameter photosensitive area improves coupling to multi-mode fiber using active device receptacles. Planar-passivated device structure.
  • Diode Type: InGaAs
  • Wavelength Of Operation: 1300 nm
Data Sheet
High Speed InGaAs PIN Photodiodes FD100 Series
Fermionics
High-speed, low dark current, low capacitance photodiode for high speed communication systems, LANs, and FDDI applications. The photosensitive area is 100 microns in diameter. Planar-passivated device structure.
  • Diode Type: InGaAs
  • Wavelength Of Operation: 1300 nm
Data Sheet
High Speed InGaAs PIN Photodiodes FD50 Series
Fermionics
Very high speed, low capacitance, low dark current photodiode for very high bit rate receiver applications. The photosensitive area is 50 microns in diameter. Planar-passivated device structure.
  • Diode Type: InGaAs
  • Wavelength Of Operation: 1300 nm
Data Sheet
High Speed InGaAs PIN Photodiodes FD80 Series
Fermionics
High-speed, low dark current, low capacitance photodiode for high speed communication systems. The photosensitive area is 80 microns in diameter. Planar-passivated device structure.
  • Diode Type: InGaAs
  • Wavelength Of Operation: 1300 nm
The Gentec-EO Photo Detector family includes nine photo detectors sensors. The PH100-Si, PH100Si-HA detectors use a silicon photodiode. The PH100-SiUV, PH10B-Si, PE10B-Si, PE3B-Si detectors also use a silicon photodiode but have enhanced sensitivity at shorter wavelengths. The PH20-Ge, PH5B-Ge, PE5B-Ge detectors use a germanium ...
  • Diode Type: Ge
  • Wavelength Of Operation: 950 - 1650 nm
Data Sheet
The Gentec-EO Photo Detector family includes nine photo detectors sensors. The PH100-Si, PH100Si-HA detectors use a silicon photodiode. The PH100-SiUV, PH10B-Si, PE10B-Si, PE3B-Si detectors also use a silicon photodiode but have enhanced sensitivity at shorter wavelengths. The PH20-Ge, PH5B-Ge, PE5B-Ge detectors use a germanium ...
  • Diode Type: Ge
  • Wavelength Of Operation: 900 - 1650 nm
Data Sheet
The Gentec-EO Photo Detector family includes nine photo detectors sensors. The PH100-Si, PH100Si-HA detectors use a silicon photodiode. The PH100-SiUV, PH10B-Si, PE10B-Si, PE3B-Si detectors also use a silicon photodiode but have enhanced sensitivity at shorter wavelengths. The PH20-Ge, PH5B-Ge, PE5B-Ge detectors use a germanium ...
  • Diode Type: Si
  • Wavelength Of Operation: 400 - 1080 nm
Data Sheet
The Gentec-EO Photo Detector family includes nine photo detectors sensors.The PH100-Si, PH100Si-HA detectors use a silicon photodiode. The PH100-SiUV, PH10B-Si, PE10B-Si, PE3B-Si detectors also use a silicon photodiode but have enhanced sensitivity at shorter wavelengths. The PH20-Ge, PH5B-Ge, PE5B-Ge detectors use a germanium ...
  • Diode Type: Si
  • Wavelength Of Operation: 630 - 1080 nm
Data Sheet
The Gentec-EO Photo Detector family includes nine photo detectors sensors.The PH100-Si, PH100Si-HA detectors use a silicon photodiode. The PH100-SiUV, PH10B-Si, PE10B-Si, PE3B-Si detectors also use a silicon photodiode but have enhanced sensitivity at shorter wavelengths. The PH20-Ge, PH5B-Ge, PE5B-Ge detectors use a germanium ...
  • Diode Type: Si
  • Wavelength Of Operation: 420 - 1080 nm
Data Sheet
The Gentec-EO Photo Detector family includes nine photo detectors sensors.The PH100-Si, PH100Si-HA detectors use a silicon photodiode. The PH100-SiUV, PH10B-Si, PE10B-Si, PE3B-Si detectors also use a silicon photodiode but have enhanced sensitivity at shorter wavelengths. The PH20-Ge, PH5B-Ge, PE5B-Ge detectors use a germanium ...
  • Diode Type: Si
  • Wavelength Of Operation: 630-1080 nm
Data Sheet
The Gentec-EO Photo Detector family includes nine photo detectors sensors.The PH100-Si, PH100Si-HA detectors use a silicon photodiode. The PH100-SiUV, PH10B-Si, PE10B-Si, PE3B-Si detectors also use a silicon photodiode but have enhanced sensitivity at shorter wavelengths. The PH20-Ge, PH5B-Ge, PE5B-Ge detectors use a germanium ...
  • Diode Type: Si
  • Wavelength Of Operation: 420 - 1080 nm
Data Sheet
CLD240 Silicon Photodiodes
Clairex Technologies
The CLD240 series are new, direct replacements for the older CLD140 series and feature larger (0.060” x 0.060”) active area silicon PIN photodiode chips. Also featured are faster switching and lower junction capacitance. Three different lensing options are offered which satisfy the majority of application requirements. ...
  • Diode Type: Si
  • Wavelength Of Operation: 850 nm
Data Sheet
CFD470 Fiber Optic PIN Photodiode
Clairex Technologies
The CFD470 contains a PIN silicon photodiode mounted on a TO-18 header. The devices are designed to self-align in the 0.228” (5.79mm) bore of a standard fiber-optic receptacle. Three crush ribs on the outside of the case provide press-fit installation and precise alignment. The CFD470 is designed to interface with multimode optical ...
  • Diode Type: Si
  • Wavelength Of Operation: 880 nm
Data Sheet

Did You know?

The PIN photodiode was invented by Jun-ichi Nishizawa and his colleagues in 1950. It is a semiconductor device that operates as a variable resistor at RF and microwave frequencies and consists of an intrinsic (lightly doped) region that is sandwiched between a p-type and an n-type layer. PIN diode finds its application in RF switches, attenuators, photodetectors, and phase shifters. The RC time constant determines the frequency response of the PIN device. PIN photodiodes may have a broad spectral range from the near infrared to ultraviolet and even to high-energy regions. They are also known for their high-speed response, high sensitivity, and low noise.