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The Gentec-EO Photo Detector family includes nine photo detectors sensors.The PH100-Si, PH100Si-HA detectors use a silicon photodiode. The PH100-SiUV, PH10B-Si, PE10B-Si, PE3B-Si detectors also use a silicon photodiode but have enhanced sensitivity at shorter wavelengths. The PH20-Ge, PH5B-Ge, PE5B-Ge detectors use a germanium ...
  • Diode Type: Si
  • Wavelength Of Operation: 630 - 1080 nm
Data Sheet
The Gentec-EO Photo Detector family includes nine photo detectors sensors.The PH100-Si, PH100Si-HA detectors use a silicon photodiode. The PH100-SiUV, PH10B-Si, PE10B-Si, PE3B-Si detectors also use a silicon photodiode but have enhanced sensitivity at shorter wavelengths. The PH20-Ge, PH5B-Ge, PE5B-Ge detectors use a germanium ...
  • Diode Type: Si
  • Wavelength Of Operation: 420 - 1080 nm
Data Sheet
The Gentec-EO Photo Detector family includes nine photo detectors sensors. The PH100-Si, PH100Si-HA detectors use a silicon photodiode. The PH100-SiUV, PH10B-Si, PE10B-Si, PE3B-Si detectors also use a silicon photodiode but have enhanced sensitivity at shorter wavelengths. The PH20-Ge, PH5B-Ge, PE5B-Ge detectors use a germanium ...
  • Diode Type: Si
  • Wavelength Of Operation: 400 - 1080 nm
Data Sheet
The Gentec-EO Photo Detector family includes nine photo detectors sensors. The PH100-Si, PH100Si-HA detectors use a silicon photodiode. The PH100-SiUV, PH10B-Si, PE10B-Si, PE3B-Si detectors also use a silicon photodiode but have enhanced sensitivity at shorter wavelengths. The PH20-Ge, PH5B-Ge, PE5B-Ge detectors use a germanium ...
  • Diode Type: Ge
  • Wavelength Of Operation: 900 - 1650 nm
Data Sheet
The Gentec-EO Photo Detector family includes nine photo detectors sensors.The PH100-Si, PH100Si-HA detectors use a silicon photodiode. The PH100-SiUV, PH10B-Si, PE10B-Si, PE3B-Si detectors also use a silicon photodiode but have enhanced sensitivity at shorter wavelengths. The PH20-Ge, PH5B-Ge, PE5B-Ge detectors use a germanium ...
  • Diode Type: Si
  • Wavelength Of Operation: 420 - 1080 nm
Data Sheet
The Gentec-EO Photo Detector family includes nine photo detectors sensors. The PH100-Si, PH100Si-HA detectors use a silicon photodiode. The PH100-SiUV, PH10B-Si, PE10B-Si, PE3B-Si detectors also use a silicon photodiode but have enhanced sensitivity at shorter wavelengths. The PH20-Ge, PH5B-Ge, PE5B-Ge detectors use a germanium ...
  • Diode Type: Ge
  • Wavelength Of Operation: 950 - 1650 nm
Data Sheet
TFMD5000B Silicon PIN Photodiode
Three Five Materials
TFMD5000 is a new device has a super low profile and an overall dimension of 5x4x1.1mm. It can accept a PIN photodiode chip with an active area up to 10mm square. In order to meet the strict requirements for different sensing applications, this device comes in 3 different versions: standard clear encapsulation lens for ...
  • Diode Type: Si
  • Wavelength Of Operation: 950 nm
Data Sheet
TFMD5000R Silicon PIN Photodiode
Three Five Materials
TFMD5000 is a new device has a super low profile and an overall dimension of 5x4x1.1mm. It can accept a PIN photodiode chip with an active area up to 10mm square. In order to meet the strict requirements for different sensing applications, this device comes in 3 different versions: standard clear encapsulation lens for ...
  • Diode Type: Si
  • Wavelength Of Operation: 950 nm
Data Sheet
TFMD5000 Silicon PIN Photodiode
Three Five Materials
TFMD5000 is a new device has a super low profile and an overall dimension of 5x4x1.1mm. It can accept a PIN photodiode chip with an active area up to 10mm square. In order to meet the strict requirements for different sensing applications, this device comes in 3 different versions: standard clear encapsulation lens for ...
  • Diode Type: Si
  • Wavelength Of Operation: 1050 nm
Data Sheet
Low Polarization Dependent Loss (PDL) InGaAs Photodiodes
GPD Optoelectronics Corp
Low Polarization Dependent Loss (PDL) InGaAs Photodiodes
  • Diode Type: InGaAs
  • Wavelength Of Operation: 1700 nm
Data Sheet
4, 8, 12, or 16 Element Monolithic Linear Array
GPD Optoelectronics Corp
Linear Arrays
  • Diode Type: Other
  • Wavelength Of Operation: 1650 nm
Data Sheet
Large Area InGaAs Photodiodes
GPD Optoelectronics Corp
Large Area InGaAs Photodiodes
  • Diode Type: InGaAs
  • Wavelength Of Operation: 1700 nm
Data Sheet
High Speed InGaAs Photodiodes
GPD Optoelectronics Corp
High Speed InGaAs Photodiodes
  • Diode Type: InGaAs
  • Wavelength Of Operation: 1700 nm
Data Sheet
Ge Photodiodes
GPD Optoelectronics Corp
Ge Photodiodes
  • Diode Type: Ge
  • Wavelength Of Operation: 1300 nm
Data Sheet
FP1-850K Photodetectors
Inject Enterprise
A photodiode of the type FP1-850K with a spectral sensitivity range of 810-870 nm with the introduction of radiation into the body through a multimode fiber with a core diameter 50 μm. It is made on the basis of a silicon pin photodiode   for use in fiber-optic communication systems, gyroscopes, measuring equipment and other ...
  • Diode Type: Si
  • Wavelength Of Operation: 810 nm
Data Sheet
Large Area InGaAs PIN Photodiodes FD3000W
Fermionics
Large area, high sensitivity photodiode for use in infrared instrumentation and sensing applications. High spectral response in the region 800 nm to 1700 nm. The photosensitive area is 3 mm in diameter. Planar-passivated device structure.
  • Diode Type: InGaAs
  • Wavelength Of Operation: 1300 nm
Data Sheet
Large Area InGaAs PIN Photodiodes FD2000W
Fermionics
Large area, high sensitivity photodiode for use in infrared instrumentation and sensing applications. High spectral response in the region 800 nm to 1700 nm. High shunt resistance allows high sensitivity to low level optical signals. The photosensitive area is 2 mm in diameter. Planar-passivated device structure.
  • Diode Type: InGaAs
  • Wavelength Of Operation: 1300 nm
Data Sheet
Large Area InGaAs PIN Photodiodes FD1500W
Fermionics
Large area, high sensitivity photodiode for use in infrared instrumentation and sensing applications. High spectral response in the region 800 nm to 1700 nm. The photosensitive area is 1.5 mm in diameter. Planar-passivated device structure.
  • Diode Type: InGaAs
  • Wavelength Of Operation: 850 nm
Data Sheet
Large Area InGaAs PIN Photodiodes FD1000W
Fermionics
Large area, high sensitivity photodiode for use in infrared instrumentation and sensing applications. High spectral response in the region 800 nm to 1700 nm. The photosensitive area is 1 mm in diameter. Planar-passivated device structure.
  • Diode Type: InGaAs
  • Wavelength Of Operation: 850 nm
Data Sheet
High Speed InGaAs PIN Photodiodes FD500 Series
Fermionics
General purpose InGaAs PIN photodiodes useful for a wide range of applications including infrared instrumentation and moderate speed communication systems. The photosensitive area is 500 microns in diameter.
  • Diode Type: InGaAs
  • Wavelength Of Operation: 1300 nm
Data Sheet

Did You know?

The PIN photodiode was invented by Jun-ichi Nishizawa and his colleagues in 1950. It is a semiconductor device that operates as a variable resistor at RF and microwave frequencies and consists of an intrinsic (lightly doped) region that is sandwiched between a p-type and an n-type layer. PIN diode finds its application in RF switches, attenuators, photodetectors, and phase shifters. The RC time constant determines the frequency response of the PIN device. PIN photodiodes may have a broad spectral range from the near infrared to ultraviolet and even to high-energy regions. They are also known for their high-speed response, high sensitivity, and low noise.