Gentec-EO Photodiode Detector PH20-GE-OD1-D0

Specifications

Diode Type: Ge
Wavelength Of Operation: 900 nm
Maximum Average Power: 300 mW
Noise Equivalent Power: 600 pW
Spectral Range: 900 - 1650 nm
Typical Rise Time: 0.2 sec
Power Calibration Uncertainty (800 - 1559 Nm): ±5.0 %
Power Calibration Uncertainty (1560 - 1650 Nm): ±7.0 %
Peak Sensitivity: 0.98 A/W @ 1550 nm
Maximum Average Power Density: 100 W/cm²
Aperture Diameter: 5 mm
Absorber: Ge
Dimensions: 38.1Ø x 36D mm
Weight: 0.14 kg
Distance To Sensor Face: 10.5 mm
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Features


  • Large Apertures: Features a 10 mm Ø aperture for silicon sensors, allowing for efficient laser power detection.

  • Multiple Versions:

    • Silicon: 350 - 1080 nm, up to 750 mW

    • Silicon-UV: 210 - 1080 nm, up to 38 mW

    • Germanium: 800 - 1650 nm, up to 500 mW



  • Choice of Attenuators:

    • OD0.3: 50% transmission (for PH100-SI UV only)

    • OD1: 10% transmission

    • OD2: 1% transmission



  • High Accuracy: The PH100-SI-HA model offers the lowest calibration uncertainty to date.

  • Precise Calibration: Allows wavelength selection in 1 nm steps for enhanced measurement precision.

  • Smart Interface: Contains all the calibration data for seamless integration and use.

  • Compatible Stand: STAND-D-233 for stable and secure positioning.

  • Compatible Displays & PC Interfaces:

    • MAESTRO

    • TUNER

    • UNO

    • P-LINK (USB)

    • M-LINK

    • P-LINK (RS-232)

    • P-LINK-4 (USB)

    • P-LINK-4 (Ethernet) V2



  • Measurement Capabilities:

    • Maximum Average Power: 300 mW

    • Noise Equivalent Power: 600 pW

    • Spectral Range: 900 - 1650 nm

    • Typical Rise Time: 0.2 sec

    • Power Calibration Uncertainty: ±5.0% (800 - 1559 nm), ±7.0% (1560 - 1650 nm)

    • Peak Sensitivity: 0.98 A/W @ 1550 nm



Applications


  • Laser power detection

  • Laser optics

  • Spectroscopy

  • Metrology and inspection