Gentec-EO Photodiode Detector PH20-GE-OD1-D0

Specifications

Diode Type: Ge
Wavelength Of Operation: 900 nm
Maximum Average Power: 300 mW
Noise Equivalent Power: 600 pW
Spectral Range: 900 - 1650 nm
Typical Rise Time: 0.2 sec
Power Calibration Uncertainty (800 - 1559 Nm): ±5.0 %
Power Calibration Uncertainty (1560 - 1650 Nm): ±7.0 %
Peak Sensitivity: 0.98 A/W @ 1550 nm
Maximum Average Power Density: 100 W/cm²
Aperture Diameter: 5 mm
Absorber: Ge
Dimensions: 38.1Ø x 36D mm
Weight: 0.14 kg
Distance To Sensor Face: 10.5 mm
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Features

  • Large Apertures: Features a 10 mm Ø aperture for silicon sensors, allowing for efficient laser power detection.
  • Multiple Versions:
    • Silicon: 350 - 1080 nm, up to 750 mW
    • Silicon-UV: 210 - 1080 nm, up to 38 mW
    • Germanium: 800 - 1650 nm, up to 500 mW
  • Choice of Attenuators:
    • OD0.3: 50% transmission (for PH100-SI UV only)
    • OD1: 10% transmission
    • OD2: 1% transmission
  • High Accuracy: The PH100-SI-HA model offers the lowest calibration uncertainty to date.
  • Precise Calibration: Allows wavelength selection in 1 nm steps for enhanced measurement precision.
  • Smart Interface: Contains all the calibration data for seamless integration and use.
  • Compatible Stand: STAND-D-233 for stable and secure positioning.
  • Compatible Displays & PC Interfaces:
    • MAESTRO
    • TUNER
    • UNO
    • P-LINK (USB)
    • M-LINK
    • P-LINK (RS-232)
    • P-LINK-4 (USB)
    • P-LINK-4 (Ethernet) V2
  • Measurement Capabilities:
    • Maximum Average Power: 300 mW
    • Noise Equivalent Power: 600 pW
    • Spectral Range: 900 - 1650 nm
    • Typical Rise Time: 0.2 sec
    • Power Calibration Uncertainty: ±5.0% (800 - 1559 nm), ±7.0% (1560 - 1650 nm)
    • Peak Sensitivity: 0.98 A/W @ 1550 nm

Applications

  • Laser power detection
  • Laser optics
  • Spectroscopy
  • Metrology and inspection