ROF Si Photodetector PR-200M Series Photodetector High-Speed PIN Detector

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Specifications

Diode Type: InGaAs
Wavelength Of Operation: 850 nm
Max Frequency Response: Other / Not specified
Active Area Size: Custom Size
Dark Current: 10-100 nA
Package Type: Custom Package
Built-In Amplifier: Yes
Applications: Sensing and Measurement
Spectral Range: 320-1000, 850-1650 nm
3dB Bandwidth: 200 MHz
Spectral Response Range (ROF-PR-200M-A): 850~1650 nm
Spectral Response Range (ROF-PR-200M-B): 320~1000 nm
Material Type (ROF-PR-200M-A): InGaAs
Material Type (ROF-PR-200M-B): Si
Photosensitive Surface Diameter: 75 um - 200 um
Input Optical Power: 10 mW
Operating Voltage: ±13.5 to ±16.5 V
Operating Temperature: -10 to 60 ºC
Storage Temperature: -40 to 85 ºC
Humidity: 5 to 90 %
Rise Time: 1.5 ns
Responsiveness @1550nm: 0.9 A/W
Responsiveness @700nm: 0.5 A/W
Gain: 1.4×10^4 V/W, 0.7×10^4 V/W
Min Detection Power: -39 dBm to -36 dBm
Noise Equivalent Power: 10 pw/√Hz to 20 pw/√Hz
Saturation Optical Power: 320 µW to 640 µW
Operating Voltage: DC ±15 V
Operating Circuit: 80 mA
Input Connector: FC/Freespace
Output Connector: SMA(f)
Output Impedance: 50 Ω
Output Coupling Method: DC
Dimensions: 76.0×72.6×44.0
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Features

  • Spectral range: 320-1000, 850-1650nm
  • 3dB bandwidth 200MHz
  • Low noise
  • High gain
  • Optical fiber space coupling input optional

Applications

  • Weak signal detection
  • Heterodyne detection