The PCI-3TE-12-1×1-TO8-wZnSeAR-36 is a state-of-the-art infrared photoconductive detector designed for optimal performance and stability. This advanced device is built on a sophisticated HgCdTe heterostructure and features a three-stage thermoelectric cooling system. It is specifically optimized to deliver peak performance at a wavelength of 12 µm, making it an ideal choice for applications requiring precise infrared detection.

To enhance its performance, the detector element is monolithically integrated with a hyperhemispherical GaAs microlens. This integration significantly improves the device's efficiency by focusing incoming infrared light onto the active element. The detector is designed to operate in an optimum bias voltage and current readout mode, ensuring reliable performance. However, it is important to note that performance at low frequencies may be reduced due to 1/f noise.

The device is equipped with a 3° wedged zinc selenide anti-reflection coated (wZnSeAR) window. This feature is crucial as it prevents unwanted interference effects, ensuring that the detector's readings are accurate and reliable. The robust design and high-quality materials used in the PCI-3TE-12-1×1-TO8-wZnSeAR-36 make it a reliable choice for various demanding applications, providing excellent long-term stability and reliability.