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Avalanche Photodiodes (APD)

500um InGaAs APD Preamplifier Module
CSRayzer Optical Technology
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500um InGaAs APD Preamplifier Module
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The 500μm InGaAs APD Preamplifier Module, specifically the CR500AH-1550-70M, is designed for high-speed, ultra-low light detection in various applications such as laser range finding, LIDAR, and free space communication. This module incorporates a 500μm InGaAs Avalanche Photodiode (APD) with a hybrid preamplifier, offering ...

Specifications
APD Type: InGaAs
Operational Wavelength (Typical): 1550 nm
Operational Wavelength Range: 1100 - 1700 nm
Active Diameter: 500 um
Reverse Breakdown Voltage (Vbr): 30 - 70 V
...
Data Sheet
3mm SI APD Preamplifier Module
CSRayzer Optical Technology
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3mm SI APD Preamplifier Module
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The CR3000AH-905-50M is an advanced photodiode designed to deliver exceptional performance in high-speed, ultra-low light detection applications. With its integrated 3mm SI Avalanche Photodiode (APD) and hybrid preamplifier, this device sets new standards in sensitivity, bandwidth, and reliability. The CR3000AH-905-50M is ...

Specifications
APD Type: InGaAs
Operational Wavelength (Typical): 905 nm
Operational Wavelength Range: 400 - 1100 nm
Active Diameter: 3 mm
Reverse Breakdown Voltage (Vbr): 130 - 250 V
...
Data Sheet
800um SI APD Preamplifier Module
CSRayzer Optical Technology
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800um SI APD Preamplifier Module
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The CR800AH-1064-150M is a high-performance device designed for high-speed, ultra-low light detection applications such as laser range finding, LIDAR, and free space communication. It features an 800um SI Avalanche Photodiode (APD) with a hybrid preamplifier for enhanced signal processing capabilities. Packed in a TO8 package with a ...

Specifications
APD Type: InGaAs
Operational Wavelength (Typical): 1064 nm
Operational Wavelength Range: 400 - 1100 nm
Active Diameter: 800 um
Reverse Breakdown Voltage (Vbr): 350 - 460 V
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Data Sheet
80um InGaAs APD Preamplifier Module
CSRayzer Optical Technology
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80um InGaAs APD Preamplifier Module
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Introducing the CR80AH-1550-200M, a cutting-edge solution for high-speed, ultra-low light detection in various applications such as laser range finding, LIDAR, and free space communication. This advanced device combines a 500μm InGaAs Avalanche Photodiode (APD) with a hybrid preamplifier to deliver exceptional performance and ...

Specifications
APD Type: InGaAs
Operational Wavelength (Typical): 1550 nm
Operational Wavelength Range: 900 - 1700 nm
Operating Temperature: -40 to +85 degC
Storage Temperature: -55 to +100 degC
...
Data Sheet
200M InGaAs APD Preamplifier Module
CSRayzer Optical Technology
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200M InGaAs APD Preamplifier Module
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The CR200AH-1550-100M-00 is a versatile preamplifier module designed for ultra-low light detection in high-speed applications, including laser range finding, LIDAR, and free space communication. Equipped with a 200um InGaAs Avalanche Photodiode and a hybrid preamplifier, this module delivers high sensitivity of at least 400kV/W, high ...

Specifications
APD Type: InGaAs
Operational Wavelength (Typical): 1300 nm
Operational Wavelength Range: 1100 - 1700 nm
Reverse Breakdown Voltage: VBR 
Operating Temperature: -40 - +85 degC
...
Data Sheet
lnGaAs Avalanche Photodiode APD0200-17-D
ANDANTA GmbH
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lnGaAs Avalanche Photodiode APD0200-17-D
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lnGaAs Avalanche Photodiodes.

Specifications
APD Type: InGaAs
Operational Wavelength (Typical): 950 nm
Operational Wavelength Range: 950 - 1650 nm
Data Sheet
nortus Optronic Photodiodes
DOEHRER Elektrooptik GmbH
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nortus Optronic Photodiodes
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With us you will find high quality InGaAs photodiodes with high clock rates, low dark currents and low capacitance with active areas of 50 to 5000nm. Different housings are available and of course we can also offer customer-specific solutions.

Specifications
APD Type: InGaAs
Operational Wavelength (Typical): -- nm
Operational Wavelength Range: 50 - 5000 nm
Data Sheet
InGaAs Avalanche Photodiode 2.5 Gbps
Go!Foton
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InGaAs Avalanche Photodiode 2.5 Gbps
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Go!Foton’s Avalanche Photodiode (APD), front-illuminate type is suitable for 2.5 Gbps applications in G-PON/Ge-PON.  This InGaAs APD has a planer structure for high reliability.

Specifications
APD Type: InGaAs
Operational Wavelength (Typical): 1550 nm
Operational Wavelength Range: 1000 - 1625 nm
Data Sheet
InGaAs Avalanche Photodiode KPDEA005-56F
Kyosemi Opto America Corp
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InGaAs Avalanche Photodiode KPDEA005-56F
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InGaAs avalanche photodiode.

Specifications
APD Type: InGaAs
Operational Wavelength (Typical): 1310 nm
Operational Wavelength Range: 1310 - 1550 nm
Data Sheet
InGaAs Avalanche Photodiodes KPDEA007-56F
Kyosemi Opto America Corp
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InGaAs Avalanche Photodiodes KPDEA007-56F
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InGaAs avalanche photodiode.

Specifications
APD Type: InGaAs
Operational Wavelength (Typical): 1310 nm
Operational Wavelength Range: 1310 - 1550 nm
Data Sheet
Avalanche Photo-Detector MTAPD-06-005
Marktech Optoelectronics Inc
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Avalanche Photo-Detector MTAPD-06-005
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Marktech Si APD’s offer low-level light and short pulse detection of wavelengths between 400 nm and 1100 nm. They feature a choice of either a 230 μm or 500 μm active area; optical sensitivity optimizations for 800 nm or 905 nm peak response; an internal gain mechanism; high gain at low bias voltage; extremely fast rise times as low ...

Specifications
APD Type: Si
Operational Wavelength (Typical): 800 nm
Operational Wavelength Range: 400 - 1100 nm
Data Sheet
Avalanche Photo-Detector MTAPD-06-001
Marktech Optoelectronics Inc
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Avalanche Photo-Detector MTAPD-06-001
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Marktech Si APD’s offer low-level light and short pulse detection of wavelengths between 400 nm and 1100 nm. They feature a choice of either a 230 μm or 500 μm active area; optical sensitivity optimizations for 800 nm or 905 nm peak response; an internal gain mechanism; high gain at low bias voltage; extremely fast rise times as low ...

Specifications
APD Type: Si
Operational Wavelength (Typical): 800 nm
Operational Wavelength Range: 400 - 1100 nm
Data Sheet
Avalanche Photo=Detector MTAPD-05-003
Marktech Optoelectronics Inc
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Avalanche Photo=Detector MTAPD-05-003
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Marktech Si APD’s offer low-level light and short pulse detection of wavelengths between 400 nm and 1100 nm. They feature a choice of either a 230 μm or 500 μm active area; optical sensitivity optimizations for 800 nm or 905 nm peak response; an internal gain mechanism; high gain at low bias voltage; extremely fast rise times as low ...

Specifications
APD Type: Si
Operational Wavelength (Typical): 800 nm
Operational Wavelength Range: 400 - 1100 nm
Data Sheet
InGaAs Avalanche Photodiodes
GPD Optoelectronics Corp
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InGaAs Avalanche Photodiodes
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InGaAs Avalanche Photodiodes

Specifications
APD Type: InGaAs
Operational Wavelength (Typical): 1300 nm
Operational Wavelength Range: 1000 - 1630 nm
Data Sheet
Ge Avalanche Photodiodes
GPD Optoelectronics Corp
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Ge Avalanche Photodiodes
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Avalanche Photodiodes

Specifications
APD Type: Ge
Operational Wavelength (Typical): 1300 nm
Operational Wavelength Range: 800 - 1800 nm
Data Sheet
H1-Series APD Receiver with Integrated Pre-amplifier and Temperature Sensor
Laser Components USA, Inc.
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H1-Series APD Receiver with Integrated Pre-amplifier and Temperature Sensor
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The ultra-low-noise H1-series is supplied in a 12-pin TO-8 package and features a built-in temperature sensor to allow temperature compensation. The maximum bandwidth is 1 MHz to 25 MHz depending on the version.

Specifications
APD Type: Si, InGaAs
Operational Wavelength (Typical): 400 - 1100 nm
Operational Wavelength Range: 900 - 1700 nm
Data Sheet
Silicon Avalanche Photodiodes SAE-, SAR-, SARF-Series
Laser Components USA, Inc.
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Silicon Avalanche Photodiodes SAE-, SAR-, SARF-Series
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Silicon Avalanche Photodiodes are used in the wavelength range between 250 nm and 1100 nm. The avalanche effect of these photodiodes make them well suited for the detection of extremely weak light intensities. Different versions are optimized for each of their own wavelength ranges.

Specifications
APD Type: Si
Operational Wavelength (Typical): 250 - 1100 nm
Operational Wavelength Range: 250 - 1100 nm
Data Sheet
InGaAs Avalanche Photodiode IAG-Series
Laser Components USA, Inc.
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InGaAs Avalanche Photodiode IAG-Series
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The IAG-series avalanche photodiode is the largest commercially available InGaAs APD with high responsivity and extremely fast rise and fall times throughout the 1000 to 1630nm wavelength range. The peak responsitivity at 1550 nm is ideally suited to eye-safe range finding applications.

Specifications
APD Type: InGaAs
Operational Wavelength (Typical): 1550 nm
Operational Wavelength Range: 1000 - 1630 nm
Data Sheet
Low-Cost Silicon Avalanche Photodiode SAH-Series
Laser Components USA, Inc.
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Low-Cost Silicon Avalanche Photodiode SAH-Series
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The SAH230M2 and SAH500M2 are low-cost, general purpose silicon APDs in a miniature SMD package. Responsivity is optimized for 850nm and 905nm rangefinders.

Specifications
APD Type: Si
Operational Wavelength (Typical): 905 nm
Operational Wavelength Range: 400 - 1000 nm
Data Sheet
Low Cost Avalanche Photodiode Arrays SAH-Series
Laser Components USA, Inc.
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Low Cost Avalanche Photodiode Arrays SAH-Series
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The customized Si APD arrays feature high sensitivity and low crosstalk, optimized for the 800 - 900 nm wavelength range. The arrays can readily be configured at variable dimensions from 8 to 16 elements. Higher pixel count and multi-row configurations are possible as well. Additional options include integrated electronics and ...

Specifications
APD Type: HgCdTe
Operational Wavelength (Typical): 800 - 900 nm
Operational Wavelength Range: 800 - 900 nm
Data Sheet
30um InGaAs APD Coaxial Photodiode Module
OSI Laser Diode Inc.
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30um InGaAs APD Coaxial Photodiode Module
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The OSI Laser Diode Inc LAPD 3030-SMR is a 30um InGaAs APD housed in a 3 pin coaxial packagecoupled to an SMF pigtail. The low noise, high sensitivity and broad Vbr curve make LAPD 3030-SMR idealfor OTDR\'s, range finders, and high sensitivity line receivers. Other breakdown voltage ranges available onrequest. The LAPD 3030 coaxial ...

Specifications
APD Type: InGaAs
Operational Wavelength (Typical): 1550 nm
Operational Wavelength Range: 1260 - 1650 nm
Operating Temp. Range: -40 - 85 oC
Active Area Diameter: 30 UM
...
Data Sheet
30um InGaAs APD Module
OSI Laser Diode Inc.
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30um InGaAs APD Module
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The LAPD 1550-30R is a 30um InGaAs mesa structure APD housed in a hermetic 3 pin TO46 Packagewith lens cap. The low noise, high sensitivity and broad Vbr curve make the LAPD 1550-30R APD idealfor use in range finders and high sensitivity line receivers. The device is RoHS compliant.

Specifications
APD Type: InGaAs
Operational Wavelength (Typical): 1550 nm
Operational Wavelength Range: 1260 - 1650 nm
Responsivity: 1 A/W
Dark Current: 30 nA
...
Data Sheet
Large Area InGaAs APD Module
OSI Laser Diode Inc.
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Large Area InGaAs APD Module
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The LAPD 1550-200R is a 200um InGaAs APD housed in a hermetic 3 pin TO46 Package. The low noise and high sensitivityof the LAPD 1550-200R APD make it ideal for use in range finding, sensors, OTDRs and any other low light level detectionapplication.

Specifications
APD Type: InGaAs
Operational Wavelength (Typical): 1250 nm
Operational Wavelength Range: 800 - 1700 nm
Dark Current: 20 nA
Bandwidth: 200 MHz
...
Data Sheet
There are 23 different Avalanche Photodiodes (APD) from suppliers and manufacturers listed in this category. In just a few clicks you can compare different Avalanche Photodiodes (APD) with each other and get an accurate quote based on your needs and specifications. Please note that the prices of Avalanche Photodiodes (APD) vary significantly for different products based on various factors including technical parameters, features, brand name, etc. Please contact suppliers directly to inquire about the details and accurate pricing information for any product model. Simply navigate to the product page of interest and use the orange button to directly reach out to the respective supplier with one click.

Did You know?

Avalanche photodiode (APD) finds its application in laser range finders, optical tomography, fiber optic communication systems, LIDAR, fluorescence detection, particle sizing and other photon counting situations. It has the advantage of high sensitivity and high response time. APDs are generally recommended for high bandwidth applications or where internal gain is needed to overcome high preamplifier noise. APDs are commercially available that span the wavelength range from 300nm to 1700nm. Silicon APDs can be used at wavelengths of 300nm-1100nm, Germanium: 800nm-1600nm, and InGaAs: 900nm-1700nm. Quantum efficiency, total leakage current and noise are important factors in choosing the right APD for your application.
External links:
1 - Applications of Si photodiodes