800um SI APD Preamplifier Module

Specifications

APD Type: InGaAs
Operational Wavelength (Typical): 1064 nm
Operational Wavelength Range: 400 – 1100 nm
Active Diameter: 800 um
Reverse Breakdown Voltage (Vbr): 350 - 460 V
Operating Voltage: 0.95*Vbr
Responsivity (@1064nm): 250 kV/W
Dynamic Range: 25 dB
Bandwidth: 150 MHz
Rise/Fall Time: 2.3 ns (10%-90%)
Noise Equivalent Power (NEP): 150 fW/√Hz at 100 kHz
Reverse Breakdown Voltage (VBR): 350–460 V
Operating Voltage: 0.95 × VBR (M=100)
Power Dissipation: 250 mW
Maximum Optical Input Power: 100 mW
Operating Temperature: -40 to +85 °C
Storage Temperature: -55 to +100 °C
Output Impedance: 50 Ω
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Features


  • High Responsivity: ≥250 kV/W for efficient light detection

  • Wide Wavelength Range: 400–1100 nm for versatile use across UV to near-infrared spectrums

  • High Bandwidth: 150 MHz bandwidth for fast data acquisition

  • Low Noise: Low noise for superior signal-to-noise ratio in low-light conditions

  • High Reliability: Stable performance in various environmental conditions

  • Built-in Preamplifier: Hybrid preamplifier for high-speed signal amplification

  • Overload Protection: Enhanced protection against high optical power levels

  • TO8 Package: Compact, robust design with a flat window for easy integration

  • Optional Temperature Sensor: AD590 or 1N914 temperature sensors for precise control

Applications


  • LIDAR Systems: Precise light detection for distance and depth measurements

  • Laser Range Finding: Accurate measurements in distance and proximity sensing

  • Free-Space Optical Communication (FSO): High-speed data transmission in optical networks

  • High-Speed Photodetection: Suitable for applications requiring fast response times

  • Remote Sensing: Effective in environmental monitoring and detection applications