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PIN Detectors (Applications: Sensing and Measurement)

EQ Photonics  offers Silicon Photodiodes, Photodiode amplifier combinations, PbS and PbSe Detectors and LEDs. Typical applications for their products include photo-electric controls; medical, scientific and industrial fluorescence; guided missile systems, ophthalmology, LED based tracking systems for surgery, vending ...

Specifications

Diode Type: Si
Wavelength Of Operation: 13.5 nm
Max Frequency Response: DC - 10 MHz
Active Area Size: 10 mm²
Dark Current: 1-10 nA
The RZPD-200M-AC is an advanced InGaAsPIN balanced photodetector designed for ultra-low noise, high-bandwidth applications. This detector integrates two matched photodiodes, a high-speed amplification circuit, and a low-noise power supply, ensuring exceptional performance in the detection of weak light signals. The RZPD-200M-AC ...

Specifications

Diode Type: InGaAs
Wavelength Of Operation: 800 nm
Max Frequency Response: Other / Not specified
Active Area Size: N/A
Dark Current: N/A
Ascentta's photodiode is widely used for the detection of the existence, intensity, position and color of light. Ascentta's photodiode designed to work in 1250-1650nm wavelength range.   Ascentta also supports multimode and PM configuration of photodiode.

Specifications

Diode Type: Other
Wavelength Of Operation: 1250 nm
Max Frequency Response: Other / Not specified
Active Area Size: Custom Size
Dark Current: < 1 nA
The RZPD-300M-AC is a low-noise, high-bandwidth InGaAs PIN balancing detector consisting of two balanced photodiodes, ultra-low noise high-speed amplification circuit, and noise floor power supply. The two photodiodes are matched to achieve an excellent common-mode rejection ratio (CMRR) for better noise reduction. It is mainly used ...

Specifications

Diode Type: InGaAs
Wavelength Of Operation: -300 nm
Max Frequency Response: Other / Not specified
Package Type: Surface Mount
Built-In Amplifier: Yes
ZKPD-150M-CG-DC is a low noise high bandwidth SI PIN balance detector consisting of two balanced photodiodes with ultra-low noise. Sound high-speed adjustable gain amplification circuit and low-noise power supply. The two photodiodes are matched to achieve an excellent common-mode rejection ratio (CMRR) for better noise reduction. It ...

Specifications

Diode Type: Si
Wavelength Of Operation: 320 nm
Max Frequency Response: Other / Not specified
Package Type: Surface Mount
Built-In Amplifier: Yes
ROF-PR-200M series photodetector integrates high-speed PIN detector and low noise amplifier, fiber or free space coupling, SMA connector output, with high gain, high sensitivity, gain flat and other characteristics, mainly used for analog optical signal reception and fiber optic sensing systems. Beijing Rofea Optoelectronics Co., ...

Specifications

Diode Type: InGaAs
Wavelength Of Operation: 850 nm
Max Frequency Response: Other / Not specified
Active Area Size: Custom Size
Dark Current: 10-100 nA
The PVI-5-1×1-TO39-NW-36 is an advanced uncooled infrared photovoltaic detector designed by VIGO System S.A. This state-of-the-art device is crafted using a sophisticated HgCdTe heterostructure, ensuring exceptional performance and stability. It is specifically optimized for peak performance at a wavelength of 5 µm, making it a ...

Specifications

Diode Type: HgCdTe
Wavelength Of Operation: 5000 nm
Max Frequency Response: Other / Not specified
Active Area Size: Custom Size
Dark Current: 1-10 nA
The PVI-2TE-4-1×1-TO8-wAl2O3-36 is a state-of-the-art infrared photovoltaic detector designed by VIGO System S.A. This advanced device is engineered with a sophisticated HgCdTe heterostructure, ensuring optimal performance and stability. It operates within the 2.4 – 4.3 µm spectral range and is specifically optimized for peak ...

Specifications

Diode Type: HgCdTe
Wavelength Of Operation: 4000 nm
Max Frequency Response: Other / Not specified
Active Area Size: Custom Size
Dark Current: 1-10 nA
The **PVA-2TE series** represents a cutting-edge line of two-stage thermoelectrically cooled infrared photovoltaic detectors, meticulously engineered by VIGO System S.A. These detectors are crafted using advanced InAs1-xSbx alloys, ensuring high performance without the inclusion of mercury or cadmium, thus adhering to the stringent ...

Specifications

Diode Type: Other
Wavelength Of Operation: 3000 nm
Max Frequency Response: Other / Not specified
Active Area Size: Custom Size
Dark Current: 1-10 nA
The PVMQ HgCdTe quadrant detector is a state-of-the-art infrared photovoltaic device designed for precision and reliability. This uncooled detector leverages advanced HgCdTe heterostructures to deliver exceptional performance and stability, making it a top choice for demanding applications. The detector is composed of four distinct ...

Specifications

Diode Type: HgCdTe
Wavelength Of Operation: 10600 nm
Max Frequency Response: Other / Not specified
Active Area Size: 1 mm²
Dark Current: 1-10 nA
The PCI-3TE-12-1×1-TO8-wZnSeAR-36 is a state-of-the-art infrared photoconductive detector designed for optimal performance and stability. This advanced device is built on a sophisticated HgCdTe heterostructure and features a three-stage thermoelectric cooling system. It is specifically optimized to deliver peak performance at a ...

Specifications

Diode Type: HgCdTe
Wavelength Of Operation: 12000 nm
Max Frequency Response: Other / Not specified
Active Area Size: 1 mm²
Dark Current: 1-10 nA
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