PH100-SI-HA-OD2-D0 Photodiode Laser Power Detector

Specifications

Diode Type: Si
Wavelength Of Operation: 630 nm
Maximum Average Power: 750 mW
Noise Equivalent Power: 2 nW
Typical Rise Time: 0.2 s
Peak Sensitivity: 980 nm
Maximum Average Power Density: 100 W/cm²
Aperture Diameter: 10 mm
Dimensions: 38.1Ø x 36D mm
Weight: 0.14 kg
Distance To Sensor Face: 13.7 mm
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Features


  • Large apertures: 10 mm Ø for the silicon sensors

  • Three versions available: Silicon 350-1080 nm (up to 750 mW), Silicon-UV 210-1080 nm (up to 38

  • mW), Germanium 800-1650 nm (up to 500 mW)

  • Choice of attenuators: OD0.3 (50% transmission), OD1 (10% transmission), OD2 (1% transmission)

  • High accuracy with low calibration uncertainty

  • Precise calibration with wavelength selection in 1 nm steps

  • Smart interface containing all the calibration data

  • Compatible with various displays and PC interfaces

Applications


  • Laser power measurement up to 750 mW

  • Research and development

  • Laser manufacturing

  • Medical and aesthetic laser applications

  • Laser-based material processing