PH100-SI-HA-OD1-D0 Photodiode Detector for Laser Power Measurement

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Specifications

Diode Type: Si
Wavelength Of Operation: 420 nm
Max Frequency Response: Other / Not specified
Active Area Size: Custom Size
Dark Current: < 1 nA, 1-10 nA, 10-100 nA, > 100 nA
Package Type: TO-Can
Built-In Amplifier: Not Specified
Applications: Telecommunications
Maximum Average Power: 300 mW
Noise Equivalent Power: 200 pW
Typical Rise Time: 0.2 s
Peak Sensitivity: 960 nm
Minimum Repetition Rate: 155 kHz
Maximum Average Power Density: 100 W/cm²
Aperture Diameter: 10 mm
Absorber: Si
Dimensions: 38.1Ø x 36D mm
Weight: 0.14 kg
Distance To Sensor Face: 13.7 mm
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Features

  • High Sensitivity: Capable of measuring laser power up to 300 mW
  • Low Noise Equivalent Power: Achieves a nominal value of 200 pW for precise measurements
  • Broad Spectral Range: Covers wavelengths from 400 to 1080 nm
  • Fast Response Time: Typical rise time of 0.2 seconds for efficient data acquisition
  • Traceable Calibration: NIST-traceable calibration for consistent and accurate measurements
  • Peak Sensitivity: Optimized for peak sensitivity at 980 nm
  • Damage Thresholds: Engineered to withstand varying laser power levels
  • Minimum Repetition Rate: Capable of handling repetition rates as low as 155 kHz

Applications

  • Research and Development: Ideal for accurate laser power measurements in R&D environments
  • Industrial Laser Systems: Suitable for analyzing laser power in industrial laser systems
  • Educational Demonstrations: Enhances educational experiments and demonstrations in optics and photonics