InGaAs PIN Detectors

ROF-PR-200M series photodetector integrates high-speed PIN detector and low noise amplifier, fiber or free space coupling, SMA connector output, with high gain, high sensitivity, gain flat and other characteristics, mainly used for analog optical signal reception and fiber optic sensing systems. Beijing Rofea Optoelectronics Co., ...

Specifications

Diode Type: InGaAs
Wavelength Of Operation: 850-1650 nm
Max Frequency Response: Other / Not specified
Active Area Size: Custom Size
Dark Current: 10-100 nA
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Data Sheet
Introducing the RZPD-200M-AC, a high-performing InGaAsPIN balancing detector that offers both low noise and high bandwidth for ultra-sensitive detection applications. This detector is designed with two balanced photodiodes and an ultra-low noise high-speed amplification circuit, along with a noise floor power supply, to ensure ...

Specifications

Diode Type: InGaAs
Wavelength Of Operation: 1550 nm
Operating Temperature: -40 to +85 degC
Storage Temperature: -55 t +100 degC
Saturation Input Optical Power: 150 uW
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Data Sheet
Introducing our high-performance 0.3mm InGaAs PIN Photodiode, model IPD-L0.3 V4.2. This cutting-edge photodiode offers exceptional features and a wide range of applications, making it the ideal choice for various optical sensing and analysis needs.

Specifications

Diode Type: InGaAs
Wavelength Of Operation: 300um/1mm nm
Active: 0.3mm/1mm or specify
Data Sheet
High Speed InGaAs PIN Photodiode FD80W
Fermionics
High-speed, low dark current, low capacitance photodiode for high-speed communication systems. The photosensitive area is 80 microns in diameter. Planar-passivated device structure.

Specifications

Diode Type: InGaAs
Wavelength Of Operation: 1300 nm
Storage Temperature: -40 - +100 °C
Responsivity: 0.85 A/W
Forward Current: 5 mA
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Data Sheet
InGaAs PIN Photodiode PIN0500-17-D-TO
ANDANTA GmbH
InGaAs PIN Photodiodes.

Specifications

Diode Type: InGaAs
Wavelength Of Operation: 900 nm
Data Sheet
25 Gbit-s p-i-n Photodiode Chips And Photodiode Array Chips 850 nm
Connector Optics LLC
Our compact, top illuminated, low capacitance, high speed GaAs-based p-i-n photodiode (PD) chips and PD array chips are available as engineering samples and well suited for applications in 850 nm range optical data communicationssystems, optical interconnects, and general research and development. The PDs are available with a range ...

Specifications

Diode Type: InGaAs
Wavelength Of Operation: 850 nm
Data Sheet
InGaAs PIN Photodiode PIN2000-17-D-T0-T2-C.

Specifications

Diode Type: InGaAs
Wavelength Of Operation: 1700 nm
Data Sheet
InGaAs PIN Photodiode PIN1000-17-D-T0-T1-C.

Specifications

Diode Type: InGaAs
Wavelength Of Operation: 1700 nm
Data Sheet
InGaAs PIN Photodiode PIN0500-17-D-T0.

Specifications

Diode Type: InGaAs
Wavelength Of Operation: 1700 nm
Data Sheet
Low Polarization Dependent Loss (PDL) InGaAs Photodiodes
GPD Optoelectronics Corp
Low Polarization Dependent Loss (PDL) InGaAs Photodiodes

Specifications

Diode Type: InGaAs
Wavelength Of Operation: 1700 nm
Data Sheet
Large Area InGaAs Photodiodes
GPD Optoelectronics Corp
Large Area InGaAs Photodiodes

Specifications

Diode Type: InGaAs
Wavelength Of Operation: 1700 nm
Data Sheet
High Speed InGaAs Photodiodes
GPD Optoelectronics Corp
High Speed InGaAs Photodiodes

Specifications

Diode Type: InGaAs
Wavelength Of Operation: 1700 nm
Data Sheet
Large Area InGaAs PIN Photodiodes FD3000W
Fermionics
Large area, high sensitivity photodiode for use in infrared instrumentation and sensing applications. High spectral response in the region 800 nm to 1700 nm. The photosensitive area is 3 mm in diameter. Planar-passivated device structure.

Specifications

Diode Type: InGaAs
Wavelength Of Operation: 1300 nm
Data Sheet
Large Area InGaAs PIN Photodiodes FD2000W
Fermionics
Large area, high sensitivity photodiode for use in infrared instrumentation and sensing applications. High spectral response in the region 800 nm to 1700 nm. High shunt resistance allows high sensitivity to low level optical signals. The photosensitive area is 2 mm in diameter. Planar-passivated device structure.

Specifications

Diode Type: InGaAs
Wavelength Of Operation: 1300 nm
Data Sheet
Large Area InGaAs PIN Photodiodes FD1500W
Fermionics
Large area, high sensitivity photodiode for use in infrared instrumentation and sensing applications. High spectral response in the region 800 nm to 1700 nm. The photosensitive area is 1.5 mm in diameter. Planar-passivated device structure.

Specifications

Diode Type: InGaAs
Wavelength Of Operation: 850 nm
Data Sheet
Large Area InGaAs PIN Photodiodes FD1000W
Fermionics
Large area, high sensitivity photodiode for use in infrared instrumentation and sensing applications. High spectral response in the region 800 nm to 1700 nm. The photosensitive area is 1 mm in diameter. Planar-passivated device structure.

Specifications

Diode Type: InGaAs
Wavelength Of Operation: 850 nm
Data Sheet
High Speed InGaAs PIN Photodiodes FD500 Series
Fermionics
General purpose InGaAs PIN photodiodes useful for a wide range of applications including infrared instrumentation and moderate speed communication systems. The photosensitive area is 500 microns in diameter.

Specifications

Diode Type: InGaAs
Wavelength Of Operation: 1300 nm
Data Sheet
High Speed InGaAs PIN Photodiodes FD300 Series
Fermionics
General purpose InGaAs PIN photodiodes useful for a wide range of applications including infrared instrumentation and moderate speed communication systems. The photosensitive area is 300 microns in diameter.

Specifications

Diode Type: InGaAs
Wavelength Of Operation: 1300 nm
Data Sheet
High Speed InGaAs PIN Photodiodes FD150 Series
Fermionics
High-speed, low dark current, low capacitance photodiode for high speed communication systems, LANs, and FDDI applications. The 150 micron diameter photosensitive area improves coupling to multi-mode fiber using active device receptacles. Planar-passivated device structure.

Specifications

Diode Type: InGaAs
Wavelength Of Operation: 1300 nm
Data Sheet
High Speed InGaAs PIN Photodiodes FD100 Series
Fermionics
High-speed, low dark current, low capacitance photodiode for high speed communication systems, LANs, and FDDI applications. The photosensitive area is 100 microns in diameter. Planar-passivated device structure.

Specifications

Diode Type: InGaAs
Wavelength Of Operation: 1300 nm
Data Sheet
High Speed InGaAs PIN Photodiodes FD50 Series
Fermionics
Very high speed, low capacitance, low dark current photodiode for very high bit rate receiver applications. The photosensitive area is 50 microns in diameter. Planar-passivated device structure.

Specifications

Diode Type: InGaAs
Wavelength Of Operation: 1300 nm
Data Sheet
The IG22-26 are a series of panchromatic PIN photodiodes with a wavelength range covering 500 - 2600 nm, depending on the option. The series have been designed for demanding spectroscopic and radiometric applications. It offers excellent shunt resistance in combination with superior responsivity over a wide range.

Specifications

Diode Type: InGaAs
Wavelength Of Operation: up to 2600 nm
Data Sheet
The IG17-series is a panchromatic PIN photodiode with a nominal wavelength cut-off at 1.7um. This series has been designed for demanding spectroscopic and radiometric applications. It offers excellent shunt resistance in combination with superior responsivity over a wide range.

Specifications

Diode Type: InGaAs
Wavelength Of Operation: up to 1700 nm
Data Sheet
The OSI Laser Diode Inc. LDPA 0003R PINFET provides an excellent solution for optical receiver systemsthat require both high sensitivity and wide dynamic range. Applications include telecommunications lineterminatingequipment or repeaters and optical sensor systems where a user adjustable gain may bedesirable for optimizing system ...

Specifications

Diode Type: InGaAs
Wavelength Of Operation: 1550 nm
Bandwidth (3dB): 3 MHz
Optical Input Overload: -6 dBm
Responsivity (1550nm): 0.9 A/W
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Data Sheet
The OSI Laser Diode Inc. PINFET provides an excellent solution for optical receiver systems that require both high sensitivity andwide dynamic range. Applications include telecommunications line-terminating equipment or repeaters and optical sensor systems.The receiver package offers high reliability satisfying Telcordia specifications.

Specifications

Diode Type: InGaAs
Wavelength Of Operation: 850, 1310, 1550 nm
Operating Temperature: -40-70C
Minimum Bandwidth: 5-250MHz
Suggested Data Rate: 6-350Mb/s
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Data Sheet
On FindLight marketplace you will find 27 different InGaAs PIN Detectors from suppliers around the world. With just a few clicks you can compare different InGaAs PIN Detectors and get accurate price quotes based on your needs and quantity required. Note that some wholesale suppliers may offer discounts for large quantities. From any product page you can directly contact any vendor within seconds.