InGaAs PIN Photodiode Modules for Telecom Applications

Specifications

Diode Type: InGaAs
Wavelength Of Operation: 13101550 nm
Bandwidth: 2.5 GHz
Detector Diameter: 75 um
Responsivity: A/W
Input Power: 10 dBm
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Features


  • InGaAs PIN Photodiode: Advanced photodiode technology offering superior performance.

  • Low Dark Current: Ensures minimal noise for clearer signal detection.

  • High Responsivity: Enhanced sensitivity with high responsivity at 1.3 µm and 1.55 µm.

  • Low Polarization Dependent Loss (PDL): Consistent performance across varying polarizations.

  • Miniature Package: Compact design suitable for space-constrained applications.

  • RoHS Compliant: Environmentally friendly with compliance to RoHS standards.

  • High Reliability: Meets TELCORDIA GR-468-CORE standards for dependable performance.

  • Operating Temperature Range: -40°C to 85°C, suitable for various environmental conditions.

  • Bandwidth: Up to 2.5 GHz, supporting high-speed data applications.

  • Multiple Model Options: Available in models LPD 3080-P M1, M2, M3, and M4.

  • Connector Options Available: Flexibility in integration with different systems.

Applications


  • DWDM System Monitor: Reliable power monitoring in dense wavelength systems

  • EDFA Tap Monitor: Efficient gain and noise monitoring in optical amplifiers

  • High-Speed Optical Receivers: Optimized for data rates up to 10 Gbps

  • SDH/SONET Receiver: Ensures signal integrity in synchronous optical networks

  • Fiber Optic Instrumentation: Ideal for lab-grade test and measurement setups