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Page 2 - PIN Detectors

ROF Si Photodetector PR-200M Series Photodetector High-Speed PIN Detector
Beijing Rofea Optoelectronics Co,. Ltd.
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ROF Si Photodetector PR-200M Series Photodetector High-Speed PIN Detector
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ROF-PR-200M series photodetector integrates high-speed PIN detector and low noise amplifier, fiber or free space coupling, SMA connector output, with high gain, high sensitivity, gain flat and other characteristics, mainly used for analog optical signal reception and fiber optic sensing systems. Beijing Rofea Optoelectronics Co., ...

Specifications
Diode Type: InGaAs
Wavelength Of Operation: 850 nm
Max Frequency Response: Other / Not specified
Active Area Size: Custom Size
Dark Current: 10-100 nA
Data Sheet
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PVI-5-1x1-TO39-NW-36 Uncooled IR Photovoltaic Detector
VIGO Photonics
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PVI-5-1x1-TO39-NW-36 Uncooled IR Photovoltaic Detector
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The PVI-5-1×1-TO39-NW-36 is an advanced uncooled infrared photovoltaic detector designed by VIGO System S.A. This state-of-the-art device is crafted using a sophisticated HgCdTe heterostructure, ensuring exceptional performance and stability. It is specifically optimized for peak performance at a wavelength of 5 µm, making it a ...

Specifications
Diode Type: HgCdTe
Wavelength Of Operation: 5000 nm
Max Frequency Response: Other / Not specified
Active Area Size: Custom Size
Dark Current: 1-10 nA
Data Sheet
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HgCdTe (MCT) Photovoltaic Detector
VIGO Photonics
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HgCdTe (MCT) Photovoltaic Detector
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The PVI-2TE-4-1×1-TO8-wAl2O3-36 is a state-of-the-art infrared photovoltaic detector designed by VIGO System S.A. This advanced device is engineered with a sophisticated HgCdTe heterostructure, ensuring optimal performance and stability. It operates within the 2.4 – 4.3 µm spectral range and is specifically optimized for peak ...

Specifications
Diode Type: HgCdTe
Wavelength Of Operation: 4000 nm
Max Frequency Response: Other / Not specified
Active Area Size: Custom Size
Dark Current: 1-10 nA
Data Sheet
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InAs Photovoltaic Detector
VIGO Photonics
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InAs Photovoltaic Detector
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The **PVA-2TE series** represents a cutting-edge line of two-stage thermoelectrically cooled infrared photovoltaic detectors, meticulously engineered by VIGO System S.A. These detectors are crafted using advanced InAs1-xSbx alloys, ensuring high performance without the inclusion of mercury or cadmium, thus adhering to the stringent ...

Specifications
Diode Type: Other
Wavelength Of Operation: 3000 nm
Max Frequency Response: Other / Not specified
Active Area Size: Custom Size
Dark Current: 1-10 nA
Data Sheet
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HgCdTe (MCT) Multi Channel Detectors
VIGO Photonics
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HgCdTe (MCT) Multi Channel Detectors
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The PVMQ HgCdTe quadrant detector is a state-of-the-art infrared photovoltaic device designed for precision and reliability. This uncooled detector leverages advanced HgCdTe heterostructures to deliver exceptional performance and stability, making it a top choice for demanding applications. The detector is composed of four distinct ...

Specifications
Diode Type: HgCdTe
Wavelength Of Operation: 10600 nm
Max Frequency Response: Other / Not specified
Active Area Size: 1 mm²
Dark Current: 1-10 nA
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HgCdTe (MCT) Photoconductive Detector
VIGO Photonics
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HgCdTe (MCT) Photoconductive Detector
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The PCI-3TE-12-1×1-TO8-wZnSeAR-36 is a state-of-the-art infrared photoconductive detector designed for optimal performance and stability. This advanced device is built on a sophisticated HgCdTe heterostructure and features a three-stage thermoelectric cooling system. It is specifically optimized to deliver peak performance at a ...

Specifications
Diode Type: HgCdTe
Wavelength Of Operation: 12000 nm
Max Frequency Response: Other / Not specified
Active Area Size: 1 mm²
Dark Current: 1-10 nA
Data Sheet
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LDPA 0003R PINFET Optical Receiver Module
OSI Laser Diode Inc.
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LDPA 0003R PINFET Optical Receiver Module
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The OSI Laser Diode Inc. LDPA 0003R PINFET is a premium optical receiver module tailored for systems that demand both high sensitivity and extensive dynamic range. This product is particularly beneficial for telecommunications line-terminating equipment and repeaters, as well as optical sensor systems. It offers users the flexibility ...

Specifications
Diode Type: InGaAs
Wavelength Of Operation: 1550 nm
Bandwidth (3dB): 3 MHz
Optical Input Overload: -6 dBm
Responsivity (1550nm): 0.9 A/W
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PINFET Optical Receiver Modules
OSI Laser Diode Inc.
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PINFET Optical Receiver Modules
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The OSI Laser Diode Inc. PINFET optical receiver modules are engineered to deliver exceptional performance in optical receiver systems demanding high sensitivity and wide dynamic range. These modules are particularly suited for use in telecommunications line-terminating equipment, repeaters, and optical sensor systems. The robust ...

Specifications
Diode Type: InGaAs
Wavelength Of Operation: 850 nm
Operating Temperature: C
Minimum Bandwidth: MHz
Suggested Data Rate: Mb/s
Data Sheet
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InGaAs PIN Photodiode Modules for Telecom Applications
OSI Laser Diode Inc.
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InGaAs PIN Photodiode Modules for Telecom Applications
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The OSI Laser Diode Inc. InGaAs PIN photodiode modules are engineered to deliver superior performance in a compact form factor, making them ideal for telecom applications. These modules are housed in a miniature coaxial package, ensuring both space efficiency and high reliability. With a focus on maintaining low ...

Specifications
Diode Type: InGaAs
Wavelength Of Operation: 13101550 nm
Bandwidth: 2.5 GHz
Detector Diameter: 75 um
Responsivity: A/W
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PINAMP Mini-DIL Optical Receivers
OSI Laser Diode Inc.
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PINAMP Mini-DIL Optical Receivers
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The PINAMP Mini-DIL Optical Receivers from OSI Laser Diode Inc. are designed to deliver exceptional performance in a compact form factor. Engineered for precision and reliability, these optical receivers are housed in a hermetic package, ensuring durability and protection against environmental factors. The hermetic seal not only ...

Specifications
Diode Type: InGaAs
Wavelength Of Operation: 1310 nm
Dark Current: 0.5 nA
Operating Temperature: C
Detector Bias: -10 V
Data Sheet
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