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Page 2 - PIN Detectors

25 Gbit-s p-i-n Photodiode Chips And Photodiode Array Chips 850 nm
Connector Optics LLC
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25 Gbit-s p-i-n Photodiode Chips And Photodiode Array Chips 850 nm
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Our compact, top illuminated, low capacitance, high speed GaAs-based p-i-n photodiode (PD) chips and PD array chips are available as engineering samples and well suited for applications in 850 nm range optical data communicationssystems, optical interconnects, and general research and development. The PDs are available with a range ...

Specifications
Diode Type: InGaAs
Wavelength Of Operation: 850 nm
Data Sheet
InGaAs PIN Photodiode PIN2000-17-D-T0-T2-C
Chunghwa Leading Photonics Tech Co Ltd
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InGaAs PIN Photodiode PIN2000-17-D-T0-T2-C
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InGaAs PIN Photodiode PIN2000-17-D-T0-T2-C.

Specifications
Diode Type: InGaAs
Wavelength Of Operation: 1700 nm
Data Sheet
InGaAs PIN Photodiode PIN1000-17-D-T0-T1-C
Chunghwa Leading Photonics Tech Co Ltd
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InGaAs PIN Photodiode PIN1000-17-D-T0-T1-C
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InGaAs PIN Photodiode PIN1000-17-D-T0-T1-C.

Specifications
Diode Type: InGaAs
Wavelength Of Operation: 1700 nm
Data Sheet
InGaAs PIN Photodiode PIN0500-17-D-T0
Chunghwa Leading Photonics Tech Co Ltd
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InGaAs PIN Photodiode PIN0500-17-D-T0
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InGaAs PIN Photodiode PIN0500-17-D-T0.

Specifications
Diode Type: InGaAs
Wavelength Of Operation: 1700 nm
Data Sheet
LM-Pbs DETECTOR
Eddy Co
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LM-Pbs DETECTOR
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LM-Pbs DETECTOR.

Specifications
Diode Type: PbSe
Wavelength Of Operation: - nm
Data Sheet
Low Noise 400 kHz Photoreceiver With Si PIN Photodiode LCA-S-400K-SI
FEMTO Messtechnik GmbH
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Low Noise 400 kHz Photoreceiver With Si PIN Photodiode LCA-S-400K-SI
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By combining state of the art photodiodes with the proven and outstanding FEMTO LCA Current Amplifier technology we designed a new family of photoreceivers with a remarkable performance. The LCA-S-400K is available with either a large area Si or InGaAs photodiode covering a spectral range from 400 to 1100 nm and 900 to 1700 nm, ...

Specifications
Diode Type: Si
Wavelength Of Operation: 320-1060 nm
Data Sheet
Ultra-Low Noise 2 kHz Photoreceiver With Si-PIN Photodiode PWPR-2K-SI
FEMTO Messtechnik GmbH
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Ultra-Low Noise 2 kHz Photoreceiver With Si-PIN Photodiode PWPR-2K-SI
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In addition to precise and fast cw-measurements the relatively large bandwidth from DC to 2 kHz also allows time-resolved and modulated measurements. Particularly the combination with lock-in amplifiers results in ultra-sensitive measurement systems being almost immune to disturbances from external sources. In this way the PWPR-2K ...

Specifications
Diode Type: Si
Wavelength Of Operation: 320-1060 nm
Data Sheet
Femtowatt Photoreceiver With Si Photodiode FWPR-20-SI
FEMTO Messtechnik GmbH
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Femtowatt Photoreceiver With Si Photodiode FWPR-20-SI
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The series FWPR-20 photoreceivers combine low noise Si or InGaAs PIN photodiodes with a specially designed transimpedance amplifier with extremely high gain of up to 1012 V/A and very low noise. This unique combination results in a photoreceiver with Femtowatt sensitivity due to its exceptional low NEP of 0.7 fW/√Hz. Direct detection ...

Specifications
Diode Type: Si
Wavelength Of Operation: 320-1060 nm
Data Sheet
INPHORA Detectors
INPHORA Inc
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INPHORA Detectors
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Inphora\'s light measuring detectors are built using selected, stability tested, high-grade silicon PIN photocells. The photocells are matched high quality custom color glass filters to ensure long-life and consistent performance. 

Specifications
Diode Type: Other
Wavelength Of Operation: 400-900 nm
Data Sheet
PbSe 2 Watt Cooled Photoconductive IR Detector B1-( )C3T
Infrared Materials Inc
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PbSe 2 Watt Cooled Photoconductive IR Detector B1-( )C3T
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TE Cooled Infrared Detectors with Fast Response and High Sensitivity in the 1 – 5.5 um Wavelength Band.

Specifications
Diode Type: PbSe
Wavelength Of Operation: 4300 nm
Data Sheet
PbSe 4 Channel Infrared Detector
Infrared Materials Inc
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PbSe 4 Channel Infrared Detector
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Multi-element assembly available with two to four discreet optical channels in a single package.  

Specifications
Diode Type: PbSe
Wavelength Of Operation: -- nm
Data Sheet
PbSe Non-Cooled Photoconductive IR Detector B1-
Infrared Materials Inc
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PbSe Non-Cooled Photoconductive IR Detector B1-
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Room Temperature Infrared Detectors with Fast Response & High Sensitivity in the 1 – 5.5 um Wavelength Band.

Specifications
Diode Type: PbSe
Wavelength Of Operation: 3800 nm
Data Sheet
Thermoelectric Cooled HgCdTe MCT-3.5-TE2-0.25
InfraRed Associates
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Thermoelectric Cooled HgCdTe MCT-3.5-TE2-0.25
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Infrared Associates, Inc. offers high quality Thermoelectrically Cooled Photoconductive HgCdTe (MCT)detectors. They offer high performance, with ease of operation. Standard detectors are optimized in the 2µm to 5µm wavelength. Extended range detectors operate in the wavelength region beyond 5µm. Optically Enhanced ...

Specifications
Diode Type: HgCdTe
Wavelength Of Operation: -3000 nm
Data Sheet
LN2 Cooled HgCdTe Detectors MCT-5-N-0.05
InfraRed Associates
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LN2 Cooled HgCdTe Detectors MCT-5-N-0.05
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Infrared Associates, Inc. offers high quality Liquid Nitrogen cooled HgCdTe detectors. Each detector is optimized for specified wavebands of; 2µm to 5µm, 2µm to 13µm or our FTIR Series with wavebands up to 2µm to 24µm, as shown in the table below. The FTIR series of HgCdTe detectors are ...

Specifications
Diode Type: HgCdTe
Wavelength Of Operation: 4500 nm
Data Sheet
LN2 Cooled HgCdTe Detectors MCT-5-N-0.10
InfraRed Associates
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LN2 Cooled HgCdTe Detectors MCT-5-N-0.10
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Infrared Associates, Inc. offers high quality Liquid Nitrogen cooled HgCdTe detectors. Each detector is optimized for specified wavebands of; 2µm to 5µm, 2µm to 13µm or our FTIR Series with wavebands up to 2µm to 24µm, as shown in the table below. The FTIR series of HgCdTe detectors are ...

Specifications
Diode Type: HgCdTe
Wavelength Of Operation: 4500 nm
Data Sheet
TFMD5000B Silicon PIN Photodiode
Three Five Materials
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TFMD5000B Silicon PIN Photodiode
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TFMD5000 is a new device has a super low profile and an overall dimension of 5x4x1.1mm. It can accept a PIN photodiode chip with an active area up to 10mm square. In order to meet the strict requirements for different sensing applications, this device comes in 3 different versions: standard clear encapsulation lens for ...

Specifications
Diode Type: Si
Wavelength Of Operation: 950 nm
Data Sheet
TFMD5000R Silicon PIN Photodiode
Three Five Materials
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TFMD5000R Silicon PIN Photodiode
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TFMD5000 is a new device has a super low profile and an overall dimension of 5x4x1.1mm. It can accept a PIN photodiode chip with an active area up to 10mm square. In order to meet the strict requirements for different sensing applications, this device comes in 3 different versions: standard clear encapsulation lens for ...

Specifications
Diode Type: Si
Wavelength Of Operation: 950 nm
Data Sheet
TFMD5000 Silicon PIN Photodiode
Three Five Materials
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TFMD5000 Silicon PIN Photodiode
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TFMD5000 is a new device has a super low profile and an overall dimension of 5x4x1.1mm. It can accept a PIN photodiode chip with an active area up to 10mm square. In order to meet the strict requirements for different sensing applications, this device comes in 3 different versions: standard clear encapsulation lens for ...

Specifications
Diode Type: Si
Wavelength Of Operation: 1050 nm
Data Sheet
Low Polarization Dependent Loss (PDL) InGaAs Photodiodes
GPD Optoelectronics Corp
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Low Polarization Dependent Loss (PDL) InGaAs Photodiodes
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Low Polarization Dependent Loss (PDL) InGaAs Photodiodes

Specifications
Diode Type: InGaAs
Wavelength Of Operation: 1700 nm
Data Sheet
4, 8, 12, or 16 Element Monolithic Linear Array
GPD Optoelectronics Corp
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4, 8, 12, or 16 Element Monolithic Linear Array
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Linear Arrays

Specifications
Diode Type: Other
Wavelength Of Operation: 1650 nm
Data Sheet
Large Area InGaAs Photodiodes
GPD Optoelectronics Corp
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Large Area InGaAs Photodiodes
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Large Area InGaAs Photodiodes

Specifications
Diode Type: InGaAs
Wavelength Of Operation: 1700 nm
Data Sheet
High Speed InGaAs Photodiodes
GPD Optoelectronics Corp
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High Speed InGaAs Photodiodes
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High Speed InGaAs Photodiodes

Specifications
Diode Type: InGaAs
Wavelength Of Operation: 1700 nm
Data Sheet
Ge Photodiodes
GPD Optoelectronics Corp
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Ge Photodiodes
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Ge Photodiodes

Specifications
Diode Type: Ge
Wavelength Of Operation: 1300 nm
Data Sheet
FP1-850K Photodetectors
Inject Enterprise
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FP1-850K Photodetectors
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A photodiode of the type FP1-850K with a spectral sensitivity range of 810-870 nm with the introduction of radiation into the body through a multimode fiber with a core diameter 50 μm. It is made on the basis of a silicon pin photodiode   for use in fiber-optic communication systems, gyroscopes, measuring equipment and other ...

Specifications
Diode Type: Si
Wavelength Of Operation: 810 nm
Data Sheet
Large Area InGaAs PIN Photodiodes FD3000W
Fermionics
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Large Area InGaAs PIN Photodiodes FD3000W
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Large area, high sensitivity photodiode for use in infrared instrumentation and sensing applications. High spectral response in the region 800 nm to 1700 nm. The photosensitive area is 3 mm in diameter. Planar-passivated device structure.

Specifications
Diode Type: InGaAs
Wavelength Of Operation: 1300 nm
Data Sheet