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Page 2 - PIN Detectors

InGaAs PIN Photodiode PIN0500-17-D-T0.

Specifications

Diode Type: InGaAs
Wavelength Of Operation: 1700 nm
Polycrystalline lead sulfide detectors (PbS) detect infrared radiation in the wavelength range between 1 µm and 3.3 µm and provide the best price-performance ratio in large active areas for the SWIR region. Although they are famous for their operation at room temperature in comparison to other detector technology, ...

Specifications

Diode Type: PbS
Wavelength Of Operation: 3300 nm
Polycrystalline PbSe is still one of the best MWIR detectors on the market for high performance without cooling. The detectors can be used uncooled at a wavelength up to 4.7 μm. At low temperatures, they achieve even higher performance levels and the wavelength shifts to 5.2 μm.

Specifications

Diode Type: PbSe
Wavelength Of Operation: 5200 nm
The IG22-26 are a series of panchromatic PIN photodiodes with a wavelength range covering 500 - 2600 nm, depending on the option. The series have been designed for demanding spectroscopic and radiometric applications. It offers excellent shunt resistance in combination with superior responsivity over a wide range.

Specifications

Diode Type: InGaAs
Wavelength Of Operation: 2600 nm
The IG17-series is a panchromatic PIN photodiode with a nominal wavelength cut-off at 1.7um. This series has been designed for demanding spectroscopic and radiometric applications. It offers excellent shunt resistance in combination with superior responsivity over a wide range.

Specifications

Diode Type: InGaAs
Wavelength Of Operation: 1700 nm
The OSI Laser Diode Inc. LDPA 0003R PINFET is a premium optical receiver module tailored for systems that demand both high sensitivity and extensive dynamic range. This product is particularly beneficial for telecommunications line-terminating equipment and repeaters, as well as optical sensor systems. It offers users the flexibility ...

Specifications

Diode Type: InGaAs
Wavelength Of Operation: 1550 nm
Bandwidth (3dB): 3 MHz
Optical Input Overload: -6 dBm
Responsivity (1550nm): 0.9 A/W
The OSI Laser Diode Inc. PINFET optical receiver modules are engineered to deliver exceptional performance in optical receiver systems demanding high sensitivity and wide dynamic range. These modules are particularly suited for use in telecommunications line-terminating equipment, repeaters, and optical sensor systems. The robust ...

Specifications

Diode Type: InGaAs
Wavelength Of Operation: 850 nm
Operating Temperature: C
Minimum Bandwidth: MHz
Suggested Data Rate: Mb/s
The OSI Laser Diode Inc. InGaAs PIN photodiode modules are engineered to deliver superior performance in a compact form factor, making them ideal for telecom applications. These modules are housed in a miniature coaxial package, ensuring both space efficiency and high reliability. With a focus on maintaining low ...

Specifications

Diode Type: InGaAs
Wavelength Of Operation: 13101550 nm
Bandwidth: 2.5 GHz
Detector Diameter: 75 um
Responsivity: A/W
The PINAMP Mini-DIL Optical Receivers from OSI Laser Diode Inc. are designed to deliver exceptional performance in a compact form factor. Engineered for precision and reliability, these optical receivers are housed in a hermetic package, ensuring durability and protection against environmental factors. The hermetic seal not only ...

Specifications

Diode Type: InGaAs
Wavelength Of Operation: 1310 nm
Dark Current: 0.5 nA
Operating Temperature: C
Detector Bias: -10 V