25 Gbit-s p-i-n Photodiode Chips And Photodiode Array Chips 850 nm
Description
Our compact, top illuminated, low capacitance, high speed GaAs-based p-i-n photodiode (PD) chips and PD array chips are available as engineering samples and well suited for applications in 850 nm range optical data communicationssystems, optical interconnects, and general research and development. The PDs are available with a range of optical aperture diameters (15 to 50 µm) both as individual chips and as 1xN (N=1, 2, 4, 12) linear arrays allowing alignment to single mode or multimode bers. The rugged PD chips may be wire or ip-chip bonded.
25 Gbit-s p-i-n Photodiode Chips And Photodiode Array Chips 850 nm
Specifications |
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|---|---|
| Diode Type: | InGaAs |
| Wavelength Of Operation: | 850 nm |
Features
Up to 12 parallel channels
More than 28 Gbit/s per channel
High temperature stability
A device-to-device pitch of 250 µm
AR coating, suitable for wire or ip-chip bonding
Applications
Active optical cables (AOCs), ROSA
High-speed optical interconnections and links
Infiniband, Radio-over-Fiber, Fibre Channel
Short-reach 40/100 Gbit/s Ethernet
Chip-to-chip interconnects
For pricing, technical or any other questions please contact the supplier
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How to order?
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Ships from:
Russia
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Sold by:
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On FindLight:
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Frequently Asked Questions
What are the applications of the 25 Gbit-s p-i-n Photodiode Chips and Photodiode Array Chips 850 nm?
The applications include active optical cables (AOCs), high-speed optical interconnections and links, Infiniband, Radio-over-Fiber, Fibre Channel, short-reach 40/100 Gbit/s Ethernet, and chip-to-chip interconnects.
The maximum data bit rate is more than 28 Gbit/s per channel.
Yes, the chips can be aligned to both single mode and multimode fibers.
The operating wavelength is 850 nm.
The chips can be wire or flip-chip bonded.