USHIO HL8337MG/HL8338MG 830nm 50mW GaAlAs Laser Diode

Specifications

Center Wavelength: 0.83 um
Output Power: 50 mW
Operation Temperature: -10~+60°C
Operating Voltage: 2.4V Max.
Package: φ5.6mm
Optical Output Power (Absolute Maximum Ratings): 50mW
LD Reverse Voltage: 2V
PD Reverse Voltage: 30V
Operating Temperature: -10 ~ +60°C
Storage Temperature: -40 ~ +85°C
Threshold Current: 20-40mA
Operating Current: 75-100mA
Operating Voltage: 1.9-2.4V
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Features


  • High Optical Output: Provides up to 50mW CW at 830nm for reliable infrared applications.

  • Wide Operating Temperature: Functions efficiently between -10°C and +60°C.

  • Low Voltage Operation: Requires a maximum of 2.4V for energy-efficient performance.

  • Compact Package: φ5.6mm design for easy integration into optical systems.

  • Single Transverse Mode: Ensures high beam quality and TE mode oscillation for precision.

  • Low Beam Divergence: Parallel: 6–12°, Perpendicular: 18–26°, enabling focused illumination.

Applications


  • Sensor Applications: Ideal for optical sensors requiring stable infrared sources.

  • Night Vision Systems: Suitable for infrared illumination in low-light conditions.

  • Machine Vision: Provides consistent illumination for automated optical inspection.

  • Optical Equipment Light Source: Compatible with laboratory and industrial optical instruments.