USHIO HL63193MG 638nm 700mW AlGaInP Laser Diode

Specifications

Center Wavelength: 0.638 um
Output Power: 700 mW
Small Package: φ 5.6 mm
Optical Output Power (1): 700 mW
Operating Temperature: -10 ~ +40 °C
Storage Temperature: -40 ~ +85 °C
Threshold Current: 200 - 250 mA
Operating Current: 820 - 1000 mA
Operating Voltage: 2.2 - 2.6 V
Beam Divergence Parallel To The Junction: 19 - 20 °
Beam Divergence Perpendicular To The Junction: 35 - 45 °
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Features


  • Visible Light Output: 638nm (Typ.) for clear and precise visibility.

  • High Optical Output Power: 700mW (Continuous Wave) for robust performance.

  • Multi Transverse Mode: Ensures versatile application capabilities.

  • Compact Design: Small package with a diameter of 5.6mm for easy integration.

  • TM Mode Oscillation: Provides stable and efficient laser operation.

Applications


  • Laser Projector: Ideal for use in laser projection systems due to its high optical output power and visible light output.

  • Show Laser: Suitable for show laser applications, providing bright and vibrant red light.

  • Light Source of Optical Equipments: Can be used as a reliable light source in various optical devices and equipment.