USHIO HL40085G 405nm 1000mW Laser Diode

Specifications

Center Wavelength: 0.405 um
Output Power: 1000 mW
Operating Voltage: 5.0 V
Package: 9.0mm
Optical Output Power (Max): 1,100 mW
LD Reverse Voltage: 2 V
Operating Temperature: 0 ~ +30 °C
Storage Temperature: -40 ~ +85 °C
Threshold Current: 320 mA
Beam Divergence Parallel: 13°
Beam Divergence Perpendicular: 42°
Monitor Current: 1.3 mA
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Features


  • High Optical Power: Delivers up to 1,000 mW continuous-wave output for intense violet light applications.

  • 405 nm Wavelength: Precise violet lasing suitable for imaging and display applications.

  • Low Operating Current & Voltage: Efficient operation at 1,000 mA typical current and 5 V max voltage.

  • Built-in Monitor PD: Enables accurate monitoring and control of output power.

  • Compact Package: 9 mm diameter package supports easy integration into systems.

  • Multiple Transverse Modes: Provides flexibility for various laser applications.

  • TE Mode Oscillation: Ensures stable laser emission characteristics.

Applications


  • Direct PCB Imaging: Suitable for high-precision circuit board marking and imaging.

  • Industrial Processing: Ideal for applications requiring high-intensity violet light.

  • Display Technologies: Enables advanced display systems with precise color output.

  • Bio & Medical Applications: Supports biomedical instrumentation requiring compact, high-power violet lasers.