USHIO HL40033G 405nm 1000mW Laser Diode

Specifications

Center Wavelength: 0.405 um
Output Power: 1000 mW
Package: f9.0 mm
Operating Temperature: 0 ~ +30 °C
Storage Temperature: -40 ~ +85 °C
Threshold Current: 250 - 400 mA
Operating Current: 1,000 - 1,300 mA
Operating Voltage: 5.0 V Max.
Beam Divergence Parallel To The Junction: 5 - 25 °
Beam Divergence Perpendicular To The Junction: 30 - 50 °
Lasing Wavelength: 400 - 410 nm
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Features


  • High Optical Output Power: Delivers up to 1,000 mW CW at 405 nm for demanding optical applications.

  • Low Operating Current: Typical operating current of 1,000 mA for efficient power usage.

  • Low Operating Voltage: Operates at a maximum of 5.0 V for reduced energy consumption.

  • TE Mode Oscillation: Ensures stable polarization and beam quality.

  • Multiple Transverse Mode: Provides uniform beam profile for precise applications.

  • Compact φ9.0 mm Package: Facilitates easy system integration and thermal management.

Applications


  • Direct Imaging for PCB: Provides precision violet laser output for high-resolution printed circuit board imaging.

  • Industrial Processing: Suitable for material marking, inspection, and micro-fabrication.

  • Display Systems: Enables vivid, high-definition projection and display applications.

  • Bio & Medical Equipment: Supports fluorescence excitation and biomedical imaging.