Rof Semiconductor Laser 1550nm Narrow Linewidth Laser Module

Specifications

Center Wavelength: 1530 um
Output Power: 30 mW
Linewidth: 2KHz-10KHz
Optical Power: 10mW-30mW
VRIN Noise: -150dB/Hz@100KHz
Wavelength: 1530-1570 nm
Output Optical Power: 10-30 mW
Relative Intensity Noise: -150 dB/Hz @100kHz
Edge Mode Rejection Ratio: 60 dB
Polarization Extinction Ratio: 20 dB
Power Stability: ±2%
Wavelength Stability: ±15 pm
Short-time Drift Of Light Frequency: 0.1-1 MHz/s
Light Frequency Shifts Over Long Periods Of Time: ±38 MHz
Working Current: 400-2000 mA
Operating Voltage: 4.75-5.25 V
Operating Temperature: -20 to 70 °C
Storage Temperature: -40 to 85 °C
Storage Humidity: 5-95 %RH
Module Size: 85*47*14 mm
Module Quality: 145 g
ESD Grade: 500 V
Integral Linewidth: 10-5-3 kHz
Instantaneous Linewidth: 1.17-0.78-0.32 kHz
Optical Noise @10Hz: 7E+06-1E+06-7E+05 Hzrms^2/Hz
Optical Noise @200Hz: 7E+04-2E+04-6E+03 Hzrms^2/Hz
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Features

  • Line width: 2KHz-10KHz (customizable)
  • Optical power: 10mW-30mW (limited by line width, can be customized)
  • VRIN noise: -150dB/ Hz@100KHz

Applications

Optical fiber sensing and detection systems (DTS, DVS, DAS, etc.)