High-power single emitter diode laser JDL-BAE-33-200-808-TM-8-4.0
Description
High-power single emitter diode lasers: 200 μm, 808 nm, 8 W cw JDL-BAE-33-200-808-TM-8-4.0
High-power single emitter diode laser JDL-BAE-33-200-808-TM-8-4.0
Specifications |
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| Center Wavelength: | 0.808 um |
| Output Power: | 8000 mW |
Features
- High laser power
- High efficiency
- Long lifetime, high reliability
- Excellent beam characteristics
Applications
- Pumping of solid-state lasers and fiber lasers
- Industrial, scientific and medical systems
- Printing industry
- Defense and security
For pricing, technical or any other questions please contact the supplier
- No registration required
- No markups, no fees
- Direct contact with supplier
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How to order?
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Ships from:
Germany
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Sold by:
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External Vendor
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Frequently Asked Questions
The wavelength of the JDL-BAE-33-200-808-TM-8-4.0 laser is 808 nm.
The maximum optical output power of the JDL-BAE-33-200-808-TM-8-4.0 laser is 8 W.
The JDL-BAE-33-200-808-TM-8-4.0 laser can be used for pumping of solid-state lasers and fiber lasers, industrial, scientific and medical systems, printing industry, and defense and security.
The degree of TM polarization of the JDL-BAE-33-200-808-TM-8-4.0 laser is 97%.
As delivered, the JDL-BAE-33-200-808-TM-8-4.0 laser cannot emit any laser beam. The laser beam can only be released if the single emitter diode lasers are connected to a source of electrical energy. In this case, IEC-Standard 60825-1 describes the safety regulations to be taken to avoid personal injury.