760 nm Laser Diode | PH760DBR Series
Description
This monolithic laser diode incorporates a distributed Bragg reflector (DBR) for
stable frequency performance over its life time. It provides a diffraction limited,
single lateral and longitudinal mode beam. Facets are passivated for high
reliability. The 760 nm Laser Diode is designed specifically for O2 detection.
760 nm Laser Diode | PH760DBR Series
Specifications |
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|---|---|
| Center Wavelength: | 0.760 um |
| Output Power: | 40 mW |
Features
- Wavelength tunable across several lines of the O2 spectrum
around 760nm - Pulsed operation for spectral stability at short pulse lengths
- High power for CW applications
- High Slope Efficiency
For pricing, technical or any other questions please contact the supplier
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- No markups, no fees
- Direct contact with supplier
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How to order?
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Ships from:
United States
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Sold by:
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On FindLight:
External Vendor
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Frequently Asked Questions
To order the 760 nm Laser Diode, you can use the part number PH760DBR040CM and assign optical power from those available. Use a three-digit format for all power entries. For special frequency selection and certification to certain atomic absorption lines, you can call the factory.
The Laser Diode is sensitive to ESD, so a grounded work area and wrist strap must be used when handling the module. It should always be stored in an antistatic container with all leads shorted together.
The maximum operating temperature of the 760 nm Laser Diode is 40°C.
The polarization extinction ratio of the Laser Diode is -16 to -19 dB.
The wavelength of the 760 nm Laser Diode is tunable across several lines of the O2 spectrum around 760nm.