EYP-RWL-1060-00100-0750-SOT01-0000 GaAs Semiconductor Laser Diode
Description
1060 nm Fabry-Perot Laser with hermetic TO Housing, Monitor Diode.
EYP-RWL-1060-00100-0750-SOT01-0000 GaAs Semiconductor Laser Diode
Specifications |
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|---|---|
| Center Wavelength: | 1.06 um |
| Output Power: | 110 mW |
Applications
- Spectroscopy
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How to order?
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Ships from:
Germany
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Sold by:
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On FindLight:
External Vendor
Eagleyard Photonics GmbH
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Frequently Asked Questions
The center wavelength of the laser diode is 1060 nm.
The output power of the laser diode is 10-100 mW at a forward current of 160 mA.
The package pinout of the laser diode includes ground and a photo diode (+), but additional information on the pinout is not provided in the product description.
The polarization of the laser diode is TE, with the electric field parallel to the Pin 2-Pin 3 plane.
The recommended operational temperature range for the laser diode is -20 to 50°C at the case.