EYP-RWL-0808-00800-4000-BFW02-0010 GaAs Semiconductor Laser Diode
Description
808 nm Ridge Waveguide Laser with hermetic Butterfly Housing Monitor Diode Collimated beam RoHS compliant.
EYP-RWL-0808-00800-4000-BFW02-0010 GaAs Semiconductor Laser Diode
Specifications |
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|---|---|
| Center Wavelength: | 0.808 um |
| Output Power: | 900 mW |
Applications
- Metrology
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How to order?
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Ships from:
Germany
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Sold by:
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On FindLight:
External Vendor
Claim Eagleyard Photonics GmbH Page to edit and add data
Frequently Asked Questions
Yes, the laser diode is RoHS compliant.
The maximum output power of the laser diode is 0.9 W peak.
The polarization extinction ratio of the laser diode is 90%.
The recommended operational temperature range for the laser diode is between -20°C and 75°C at the case.
The center wavelength of the laser diode is between 796 nm and 816 nm.
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