SB1-532-15-5: 532nm Microchip Laser

Specifications

Avg. Power: 0.075 W
Wavelength: 532 nm
Repetition Rate: 0.001 – 5 kHz
Spatial Mode (M^2): 1.3
Pulse Duration: 1.3 ns
Cooling: Air
Output Wavelength: 532 nm
Pulse Repetition Rate: 5 kHz
Pulse Energy: > 15 uJ
Pulse Width: < 1.3 ns
Peak Power: > 11 kW
Short Term Output Energy Instability: < 3 %
Long Term Output Power Instability: < 5 %
Beam Quality (M^2): < 1.3
Output Beam Diameter At Exit Aperture: < 0.3 mm
Beam Divergence (half Angle): < 4 mrad
Beam Ellipticity (axes Ratio): > 0.80
Warm Up Time After Cold Start: < 5 min
Power Consumption: < 20 W
Mechanical Package: SB1
Operational Temperature Range: +10°C to +40°C
Storage Temperature Range: -20°C to +60°C
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Features


  • 532 nm

  • <1.3ns

  • >15uJ

  • Single Longitudinal Mode

  • All-In-One Miniature Design

Applications


  • Biophotonics

  • LIBS

  • LiDAR

  • Telemetry

  • Laser manufacturing

  • Micromachining

  • Spectroscopy

  • Raman