SNV-40P-100 High Performance UV Microchip Laser

Specifications

Avg. Power: 0.04 W
Wavelength: 355 nm
Repetition Rate: 19 – 19 kHz
Spatial Mode (M^2): 1.3
Pulse Duration: 0.6 ns
Pulse-to-Pulse Stability (RMS): 2 %
Cooling: Air
Beam Profile: Gaussian TEM00
Polarization: Linear, PER>20dB
Peak Power: >5kW
Output Energy: >2uJ
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Features

Environment Parameters



  • Operating Temperature Range: 15-35°C

  • Maximum Laser Head Baseplate Temperature: <50°C

  • Maximum Power Consumption: <40W

  • Laser Head Thermal Dissipation: <15W

  • Storage Temperature: 0-50°C

  • Shock of 11ms according to IEC 68-2-27, non operating: 25g

  • Vibration 5Hz to 500Hz sinusoidal according to IEC 68-2-6: 2g

Applications


  • Semiconductor inspection

  • Laser-induced fluorescence (LIF)

  • Micro-dissection

  • Organic compound marking and micromachining

  • Biohazard detection

  • Time resolved fluorescence

  • Laser Induced Breakdown Spectroscopy (LIBS)

  • Biophotonics