SNP-300P-100 High Performance IR Microchip Laser

Specifications

Avg. Power: 0.3 W
Wavelength: 1064 nm
Repetition Rate: 29 – 29 kHz
Spatial Mode (M^2): 1.3
Pulse Duration: 0.75 ns
Pulse-to-Pulse Stability (RMS): 1 %
Cooling: Air
Beam Profile: Gaussian TEM00
Beam Ellipticity: <1.2
Polarization: Linear, PER>20dB
Output Energy: >10uJ
Peak Power: >13kW
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Features

For generating high peak power IR pulses of a few hundred picoseconds, microchip lasers are economical, compact, and reliable. Sub-nanosecond 1064nm pulses are directly generated from the diode-pumped passively Q-switched Nd:YAG microchip engine. Microchips are also easy to operate and service; controllers can be used with every laser head model and swapped within minutes while conserving constant performances.


The SNP series are designed for high average power, either from pulse energies of 20 µJ at 1064nm, or from repetition rates up to 130 kHz.

Applications


  • Material Processing

    • Cost effective marking solutions

    • Graphitization



  • Instrumentation

    • Ranging

    • Differential absorption LIDAR

    • Super-continuum generation

    • Distributed temperature sensing

    • Raman spectroscopy



  • Biophotonics

    • Nanosurgery

    • Protein cross-linking