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CW Semiconductor Lasers

BOX Optronics 980 nm Pump Laser Source integrates a butterfly DFB chip with fiber-Bragg-grating frequency locking, delivering up to 700 mW of continuous power at 974 nm or 976 nm with ≤ ±0.02 dB short-term and ≤ ±0.05 dB long-term stability.  The benchtop (195 × 220 × 120 mm) or slim module (150 ...

Specifications

Center Wavelength: 980 um
Output Power: 200 mW
Power Instability: ≤±0.02 dB
Fiber Type: Hi1060/PM980
Dimensions: 195(W)×220(D)×120(H)/150(W)×125(D)×20(H) mm
The 850L-1XA is an 850 nm low noise diode laser from Integrated Optics. The IO Matchbox series includes single mode laser diode modules offering excellent performance and reliability in an ultra-compact “all-in-one” driver integrated laser head. The 850L-1XA comes standard with internal voltage up-conversion that allows ...

Specifications

Center Wavelength: 0.85 um
Output Power: 130 mW
High-power diode laser bars for the most demanding applications. They are extremely reliable, efficient, and durable. This high power laser diode bar is available on the standard CS package. Other package options are available upon request. Our semiconductor products are easily assembled using standard soldering methods. The ...

Specifications

Center Wavelength: 0.796 um
Output Power: 30000 mW
Operating Current: 28000 mA
This 665nm red diode laser produces 750mW from a 100um emitter in the free space packages or 600mW from the fiber in the fiber coupled packages. It has a low threshold current and high slope efficiency, which results in a low operating current which enhances reliability.

Specifications

Center Wavelength: 0.665 um
Output Power: 600 mW
This 680nm diode laser produces 800mW from a 50um emitter in the free space packages or 600mW from the fiber in the fiber coupled packages. It has a low threshold current and high slope efficiency, which results in a low operating current which enhances reliability.

Specifications

Center Wavelength: 0.68 um
Output Power: 600 mW
This 635nm red diode laser produces 600mW from a 150um emitter in the free space packages or 480mW from the fiber in the fiber coupled packages. It has a low threshold current and high slope efficiency, which results in a low operating current which enhances reliability.

Specifications

Center Wavelength: 0.635 um
Output Power: 480 mW
The Photodigm 1039 nm DBR Laser Diode is a high-performance, monolithic single-frequency laser designed for precision applications requiring narrow linewidth, single spatial mode emission, and high stability. Built on Gallium Arsenide (GaAs) technology, this edge-emitting diode delivers excellent optical performance with passivated ...

Specifications

Center Wavelength: 1.03 um
Output Power: 40 mW
Operating Current, Max (CW & Pulsed): 350 mA
Optical Power At Max Operating Current: 180 mW
Storage Temperature: 0 to +70 °C
The Photodigm 739 nm Distributed Bragg Reflector (DBR) Laser Diode is a high-performance, single-frequency laser designed for applications requiring exceptional spectral purity and precision. Based on Photodigm’s advanced Gallium Arsenide (GaAs) monolithic laser technology, this edge-emitting diode provides a single spatial ...

Specifications

Center Wavelength: 0.739 um
Output Power: 40 mW
Operating Current, Max (CW & Pulsed): 200 mA
Optical Power At Max Operating Current: 80 mW
Storage Temperature: 0 to +70 °C
The 766.700nm (K) DBR Series of high-performance edge-emitting laser diodes are based on Photodigm’s advanced monolithic single-frequency Gallium Arsenide (GaAs) based laser technology. It provides a single spatial mode beam and has passivated facets for reliability. The 766.700 nm Series DBR devices are used in atomic ...

Specifications

Center Wavelength: 0.7667 um
Output Power: 40 mW
Operating Current, Max (CW & Pulsed): 200 mA
Optical Power At Max Operating Current: 80 mW
Storage Temperature: 0 to +70 °C
The 852.347 nm DBR Laser Diode from Photodigm offers high-performance edge-emitting technology, ideal for Cesium-based atomic spectroscopy and Raman spectroscopy applications. Built on advanced monolithic single-frequency Gallium Arsenide (GaAs) technology, this laser provides a stable, single spatial mode beam with passivated facets ...

Specifications

Center Wavelength: 0.852 um
Output Power: 80 mW
Laser Forward Voltage: 2 V
Operating Current, Max (CW & Pulsed): 350 mA
Optical Power At Max Operating Current: 240 mW
The Photodigm 845.584 nm DBR Laser Diode is a high-performance, edge-emitting semiconductor laser designed for precision spectroscopy and atomic cooling applications. Engineered with monolithic single-frequency Gallium Arsenide (GaAs) technology, this Distributed Bragg Reflector (DBR) laser ensures exceptional spectral purity, ...

Specifications

Center Wavelength: 0.845 um
Output Power: 80 mW
Operating Current, Max (CW & Pulsed): 350 mA
Optical Power At Max Operating Current: 240 mW
Storage Temperature: 0 to +70 °C
The 737 nm Distributed Bragg Reflector (DBR) Laser Diode from Photodigm is a high-performance edge-emitting laser designed for precision optical applications. Utilizing monolithic single-frequency GaAs-based laser technology, this device delivers a single spatial mode beam, ensuring excellent spectral purity and stability. With a ...

Specifications

Center Wavelength: 0.737 um
Output Power: 40 mW
Operating Current, Max (CW & Pulsed): 200 mA
Optical Power At Max Operating Current: 80 mW
Storage Temperature: 0 to +70 °C
The 894.592 nm Distributed Bragg Reflector (DBR) Laser Diode is a high-performance edge-emitting laser designed for precision applications, particularly in Cesium-based atomic spectroscopy. Engineered with advanced monolithic single-frequency Gallium Arsenide (GaAs) technology, this laser diode delivers a single spatial mode beam, ...

Specifications

Center Wavelength: 0.894 um
Output Power: 80 mW
Operating Current, Max (CW & Pulsed): 350 mA
Optical Power At Max Operating Current: 240 mW
Storage Temperature: 0 to +70 °C
The 866.214 nm DBR Laser Diode from Photodigm is a high-performance, edge-emitting laser diode based on advanced Gallium Arsenide (GaAs) technology. Offering single spatial mode output with passivated facets for enhanced reliability, this laser diode is ideal for atomic spectroscopy applications, particularly for calcium ion (Ca+) ...

Specifications

Center Wavelength: 0.866 um
Output Power: 80 mW
Operating Current, Max (CW & Pulsed): 350 mA
Optical Power At Max Operating Current: 240 mW
Storage Temperature: 0 to +70 °C

Frequently Asked Questions

Facet coating is a technique used to reduce the reflectivity of the laser cavity's end facets, which can cause optical feedback and degrade the laser's performance. By applying a thin layer of anti-reflective coating to the facets, the reflectivity can be minimized, resulting in higher output powers, better beam quality, and improved reliability.

Temperature and current are critical parameters that can affect the performance and lifetime of CW semiconductor lasers. High operating temperatures can cause degradation and failure of the laser due to increased thermal stress, while high currents can lead to increased heating, decreased efficiency, and premature aging. Careful control of temperature and current is essential for optimizing the performance and reliability of CW semiconductor lasers.

Yes, CW diode lasers are commonly used in medical and scientific applications, including biomedical imaging, microscopy, and spectroscopy. Their high efficiency, compact size, and ease of integration make them well-suited for these applications, where precise and reliable performance is critical.

Wavelength stabilization is a technique used to stabilize the output wavelength of CW semiconductor lasers by using a feedback mechanism to compensate for changes in temperature or current. This results in a more stable and consistent output wavelength, which is critical for applications such as optical communications and spectroscopy.

Quantum well design is a technique used to improve the efficiency and output power of CW semiconductor lasers by using a series of ultra-thin semiconductor layers to confine the electrons and holes in the laser's active region. This results in a higher gain, lower threshold current, and reduced heating, which can improve the laser's performance and lifetime.

Distributed feedback (DFB) lasers are a type of CW semiconductor laser that use a grating structure to provide feedback for the laser cavity. This results in a single-mode output with high spectral purity and narrow linewidth. DFB lasers are widely used in optical communications and sensing applications, where stable and precise performance is critical.

External modulation is a technique used to improve the performance of CW diode lasers by modulating the input signal externally, rather than directly modulating the laser itself. This can improve the laser's bandwidth, reduce noise, and enable higher data rates in optical communications and data networking applications.

Gain-switched lasers are a type of CW semiconductor laser that use a pulsed current to achieve a high peak power output. They offer several advantages over other types of CW semiconductor lasers, including higher peak powers, faster rise times, and lower costs. Gain-switched lasers are used in a variety of applications, including range finding, LIDAR, and materials processing.

Continuous-Wave Semiconductor Lasers: Steady Light for Precision Applications

Continuous-wave (CW) semiconductor lasers are pivotal in various industries, offering a stable and uninterrupted laser beam ideal for applications requiring consistent illumination. Unlike pulsed lasers that emit light in bursts, CW lasers provide a constant output, making them indispensable in fields such as telecommunications, medical diagnostics, and industrial manufacturing.

Understanding CW Semiconductor Lasers

At their core, CW semiconductor lasers operate by maintaining a continuous flow of electrical current through a semiconductor material, typically composed of compounds like gallium arsenide (GaAs) or indium phosphide (InP). This process stimulates the emission of photons, resulting in a steady laser beam. The design ensures minimal fluctuations in output power, which is crucial for applications demanding high precision and reliability.

Key Features and Advantages

  • Stable Output: The continuous emission ensures uniform intensity, essential for tasks like high-resolution imaging and precise measurements.

  • Compact Design: Their small size allows for easy integration into various systems, from handheld devices to complex industrial machinery.

  • Energy Efficiency: CW semiconductor lasers typically consume less power compared to other laser types, translating to cost savings and reduced thermal management requirements.

  • Longevity: The solid-state nature of these lasers contributes to a longer operational lifespan, reducing maintenance and replacement costs.

Applications Across Industries

  • Telecommunications: CW lasers serve as light sources in fiber-optic communication systems, enabling high-speed data transmission over long distances.

  • Medical Diagnostics: Instruments like flow cytometers and optical coherence tomography devices utilize CW lasers for accurate and non-invasive diagnostics.

  • Industrial Manufacturing: CW semiconductor lasers are employed in material processing tasks such as cutting, welding, and engraving, where consistent energy delivery is paramount.

  • Scientific Research: Laboratories use these lasers in experiments requiring stable light sources, including spectroscopy and interferometry.

Selecting the Right CW Semiconductor Laser

When choosing a CW semiconductor laser, consider factors like wavelength, output power, beam quality, and compatibility with existing systems. Ensuring that the laser meets the specific requirements of your application will maximize performance and efficiency.

At FindLight, we offer a curated selection of CW semiconductor lasers from leading manufacturers, catering to a wide range of applications. Explore our catalog to find the ideal solution for your needs.

Did You know?

The first useful semiconductor laser was made by R.N. Hall in 1962 which was composed of GaAs materials that emitted in near infrared at 0.8 µm. The semiconductor laser is similar to transistor, has the appearance of a LED but the output beam has the characteristics of a laser. The application that was the main driving force in the development of semiconductor lasers was in the field of long distance communications but at this moment the use of this laser in compact disc players constitutes their largest single market. Using semiconductor laser gives an advantage of low power consumption requirements.